The invention refers to a method for activating an absorber layer of a semi-finished thin-film solar cell. The absorber layer comprises CdSe.sub.xTe.sub.1-x, CdSe, CdS or CdTe. The method comprises the steps of providing a semi-finished thin-film solar cell with an absorber layer comprising a CdSe.sub.xTe.sub.1-x, layer or comprising at least two layers selected from CdS, CdTe, ZnTe, CdSe, forming a polyvinylchloride film on a surface of the absorber layer, and performing a heat treatment of the semi-finished thin-film solar cell with the polyvinylchloride film on it, wherein the temperature is in the range of 300 C. to 500 C.

The invention refers to a method for activating an absorber layer of a semi-finished thin-film solar cell. The absorber layer comprises CdSe.sub.xTe.sub.1-x, CdSe, CdS or CdTe. The method comprises the steps of providing a semi-finished thin-film solar cell with an absorber layer comprising a CdSe.sub.xTe.sub.1-x, layer or comprising at least two layers selected from CdS, CdTe, ZnTe, CdSe, forming a polyvinylchloride film on a surface of the absorber layer, and performing a heat treatment of the semi-finished thin-film solar cell with the polyvinylchloride film on it, wherein the temperature is in the range of 300 C. to 500 C.

A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.

A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.