Proposed is an X-ray detector with a driving sequence that repeats a standby section, a ready section, an integration section, and a readout section, the X-ray detector including a first electrode, on a substrate, to which a pixel voltage is applied, a photoconductor layer on the first electrode, and a second first electrode on the photoconductor layer, wherein a switching voltage having a potential less than or equal to a potential of the pixel voltage is applied to the second electrode during at least a portion of the standby section, and a bias voltage is applied to the second electrode between the standby section and a next standby section.

Proposed is an X-ray detector including first and second electrodes on a substrate, and a photoconductor layer provided between the first electrode and the second electrode and configured to contain perovskite, wherein the photoconductor layer may include a first photoconductive layer made of a first perovskite with a columnar crystal structure, and a second photoconductive layer provided on the first photoconductive layer, and made of a second perovskite with a cubic crystal structure.

Solid-state radiation detectors utilizing a film as an alpha detection layer are provided. The detector can include a neutron conversion layer disposed thereon to enable neutron detection. The film can detect alpha particles from the ambient environment or emitted by the neutron conversion layer (if present) so the device can detect alpha particles and/or neutrons. The film can generate electron-hole pairs and can be disposed near a semiconductor material. The film can have a thickness of, for example, at least 100 nanometers.

A manufacturing method of a diode radiation sensor having a charge multiplication diode includes providing a substrate that is made of a semiconductor material and has a front surface and a rear surface; making, near the front surface, a first layer of a semiconductor material having a first type of doping; and making, deep in the substrate, a second layer of a semiconductor material having a second type of doping that is electrically opposite to the first type. The second layer is obtained by inserting into the substrate a first predetermined amount of a first type of dopant and a second predetermined amount of a second type of dopant.

A detector may be provided with an array of sensing elements. The detector may include a semiconductor substrate including the array, and a circuit configured to count a number of charged particles incident on the detector. The circuit of the detector may be configured to process outputs from the plurality of sensing elements and increment a counter in response to a charged particle arrival event on a sensing element of the array. Various counting modes may be used. Counting may be based on energy ranges. Numbers of charged particles may be counted at a certain energy range and an overflow flag may be set when overflow is encountered in a sensing element. The circuit may be configured to determine a time stamp of respective charged particle arrival events occurring at each sensing element. Size of the sensing element may be determined based on criteria for enabling charged particle counting.

A semiconductor component includes a semiconductor substrate, a first electrical insulation layer on a front side, a second electrical insulation layer on the first electrical insulation layer, and a contact surface for the semiconductor substrate in or on the second electrical insulation layer. A method for making a recess for a through contact comprises: creating a blind hole-like recess through the semiconductor substrate to the first electrical insulation layer; removing the first electrical insulation layer within the blind hole-like recess; expanding the blind hole-like recess in a direction towards the contact surface by partially removing the second electrical insulation layer; applying a third electrical insulation layer to inner walls of the expanded recess, wherein the first electrical insulation layer is covered up to the expanded recess; and anisotropic etching the second electrical insulation layer towards the contact surface until the contact surface for the semiconductor substrate is revealed.

The present disclosure relates to a radiation detector that is capable of preventing deterioration in an SN ratio of a read-out signal. The radiation detector includes a TlBr crystalline body, and a first electrode and a second electrode that have been provided on respective electrode formation surfaces. At least one of the first electrode and the second electrode includes a first layer and a second layer. The first layer formed on the electrode formation surface contains metallic thallium, or a first alloy of metallic thallium and another metal. The second layer on the first layer contains an alloy of a first metal and a second metal. A diffusion coefficient of metallic thallium to a layer comprised of the alloy of the first metal and the second metal is smaller than a diffusion coefficient of metallic thallium to a layer comprised of the second metal.

This invention relates to a panel for an X-ray detector comprising a bismuth oxyiodide (BiOI) single crystal material, or a material derived therefrom, as well as a bismuth oxyiodide single crystal material useful in such an X-ray detector, as well as a method for preparing the same. In one aspect, the present invention provides a bismuth oxyiodide (BiOI) single crystal material for use in a panel for an X-ray detector having a length (L) dimension of at least 1 mm, a width (W) dimension of at least 1 mm, and a thickness (T) dimension of at least 0.12 mm.

Disclosed herein are tritium detection devices and methods of making and use thereof. For example, disclosed herein are tritium detection devices comprising: a tritium detection region comprising a tritium absorption layer and an anti-diffusion layer; a Schottky contact region comprising a Schottky contact layer; a semiconductor layer, the semiconductor layer being a layer comprising a semiconductor; an epitaxial semiconductor layer, the epitaxial semiconductor layer being an epitaxial layer of the semiconductor; and an Ohmic contact layer.

In a described example, an apparatus includes: a photon detector array with a first signal output pad coupled to a photon detector array pixel; a die carrier comprising a readout integrated circuit (ROIC) die and a conductor layer having conductors that couple a first signal input pad on the conductor layer to an input signal lead of the ROIC die; and the first signal output pad coupled to the first signal input pad.