A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

A superconductive cable including: a former; one or more superconductive conductor layers provided outside the former; an insulating layer configured to surround the superconductive conductor layers; and one or more superconductive shield layers provided on an exterior of the insulating layer. The superconductive conductor layers and the superconductive shield layers are formed of superconductive wire rods, and each superconductive wire rod includes a metal substrate layer and a plurality of superconducting layers deposited on the metal substrate layer using a superconductive material. In the superconductive wire rods of an outermost superconductive conductor layer among the superconductive conductor layers and an innermost superconductive shield layer among the superconductive shield layers, each of the metal substrate layers and the superconducting layers are disposed in opposite directions.

A method for producing an at least two-part structure, such as a semifinished product for a superconducting wire is provided. A first structure and a second structure are separately produced, and the first structure and the second structure are then inserted one into the other. The first structure and the second structure are respectively produced in layers by selective laser melting or selective electron beam melting of a powder. The method produces two-part structures for semifinished products of superconducting wires.

A bandpass parametric amplifier circuit includes a plurality of unit cells. At least one unit cell includes a first inductor having a first node coupled to a center conductor and a second node coupled to ground. There is a first capacitor having a first node coupled to the center conductor and a second node coupled to ground. There is a second inductor having a first node coupled to the center conductor. A second capacitor has a first node coupled to a second node of the second inductor. The second capacitor and the second inductor are in series with the center conductor.

A method of fabricating a superconductor device includes providing a first metal layer on top of the substrate. An oxidation of a top surface of the first metal layer is rejected. A second metal layer is deposited on top of the second metal layer. A superconducting alloy of the first metal layer and the second metal layer is created between the first metal layer and the second metal layer. There is no oxide layer between the superconducting alloy and the first metal layer.

An oxide superconductor includes: REBa.sub.2Cu.sub.3O.sub.7-x (RE being one element selected from a “RE element group” of Pr, Nd, Sm, Eu, Gd, Y, Tb, Dy, Ho, Er, Tm, Yb, and Lu). The RE includes at least three, types of metallic elements (M1, M2, and M3), and the three types of metallic elements are any element of the RE element group selected in order. In an oxide system satisfying R(1)≦20 mol % and R(M2)≧60 mol % and R(M3)≦20 mol %, R(M1) being an average metallic element ratio of M1 in M1+M2+M3, SD(Ms)>0.15 is satisfied at a position at 50% of an average film thickness of a cross section including the c-axis, Ms being the metallic element of not larger of R(M1) and R(M3), SD(Ms) being a standard deviation/average value of a concentration of Ms.

A superconducting circuit includes a Josephson junction device including a lower superconducting material layer formed on a substrate and a junction layer formed on the lower superconducting material layer. The superconducting circuit also includes an upper superconducting material layer formed over the junction layer. At least the lower superconducting material layer comprises grains having a size that is larger than a size of the Josephson junction.

Superconducting Meissner effect transistors, methods of modulating, and systems are disclosed. In one aspect a disclosed transistor includes a superconducting bridge between a first and a second current probe, the first and second current probe being electrically connected to a source and a drain electrical connection, respectively and a control line configured to emit a magnetic field signal having signal strength H.sub.sig at the superconducting bridge. In one aspect the emitted magnetic field is configured to break Cooper pairs in the superconducting bridge.

A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

The method is for manufacturing a high temperature multi-filamentary superconducting tape wire having an oxide superconducting layer formed on a tape-shaped metal substrate with an intermediate layer therebetween and a metal stabilizing layer formed on the oxide superconducting layer, wherein one or more lengthwise slits are formed in the oxide superconducting layer and the intermediate layer and no slits are formed in the metal substrate and the stabilizing layer. The method includes: a step for preparing a high temperature superconducting wire material having an oxide superconducting layer formed on a tape-shape metal substrate with an intermediate layer therebetween and a stabilizing layer formed on the oxide superconducting layer; and a step for applying a load to the high temperature superconducting wire material to form slits. The method enables simple manufacturing of a high temperature superconducting wire material having a finer superconducting layer without sacrificing superconducting performance and mechanical strength.