Patent classifications
H01L39/12
Oxide superconductor and method for manufacturing the same
An oxide superconductor of an embodiment includes an oxide superconductor layer having a continuous Perovskite structure containing rare earth elements, barium (Ba), and copper (Cu). The rare earth elements contain a first element which is praseodymium (Pr), at least one second element selected from the group consisting of neodymium (Nd), samarium (Sm), europium (Eu), and gadolinium (Gd), at least one third element selected from the group consisting of yttrium (Y), terbium (Tb), dysprosium (Dy), and holmium (Ho), and at least one fourth element selected from the group consisting of erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).
Sensor element, measuring device, method for manufacturing sensor element, electronic circuit element, and quantum information element
A sensor element including a diamond in which nitrogen-vacancy centers in a diamond crystal structure stabilize in a negative charge state. By ensuring that the diamond of the sensor element is n-type phosphorus-doped and contains nitrogen-vacancy centers in the crystal structure, the probability that nitrogen-vacancy centers in the diamond lattice are in a neutral state decreases, and the nitrogen-vacancy centers stabilize in a negative charge state.
SYSTEMS, DEVICES, AND METHODS FOR RESISTANCE METROLOGY USING GRAPHENE WITH SUPERCONDUCTING COMPONENTS
A quantum Hall resistance apparatus is to improve resistance standards and includes a substrate, a graphene epitaxially grown on the substrate and having a plurality of first contact patterns at edges of the graphene, a plurality of contacts, each including a second contact pattern and configured to connect to a corresponding first contact pattern, and a protective layer configured to protect the graphene and to increase adherence between the first contact patterns and the second contact patterns. The contacts become a superconductor at a temperature lower than or equal to a predetermined temperature and under up to a predetermined magnetic flux density.
METAL FLUORIDE ENCAPSULATION OF SUPERCONDUCTING DEVICES
Techniques regarding encapsulating one or more superconducting devices of a quantum processor are provided. For example, one or more embodiments described herein can regard a method that can comprise depositing a metal fluoride layer onto a superconducting resonator and a silicon substrate that can be comprised within a quantum processor. The superconducting resonator can be positioned on the silicon substrate. Also, the metal fluoride layer can coat the superconducting resonator.
SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICE AND ITS FABRICATION
A method of fabricating a semiconductor-superconductor hybrid device comprises providing a workpiece comprising a semiconductor component, a layer of a first superconductor material on the semiconductor component, and a layer of a second superconductor material on the first superconductor material, the second superconductor material being different from the first superconductor material; etching the layer of the second superconductor material to expose a portion of the first superconductor material; and oxidising the portion of the first superconductor material to form a passivating layer on the semiconductor. The first superconductor provides energy coupling between the semiconductor and the second superconductor, and the passivating layer protects the semiconductor while allowing electrostatic access thereto. Also provided are a hybrid device, and a method of etching.
Method and device for producing a superconductive conductor
Methods and devices for producing a superconductive conductor are disclosed. The method includes providing a plurality of conductive strips by means of a strip provision device, applying liquid soldering agent onto the plurality of conductive strips, stacking the conductive strips wetted with soldering agent, and forming a superconductive body by machining the strip stack.
Oxide superconductor and method for manufacturing the same
An oxide superconductor of an embodiment includes an oxide superconductor layer having a continuous Perovskite structure including rare earth elements, barium (Ba), and copper (Cu). The rare earth elements include a first element which is praseodymium, at least one second element selected from the group consisting of neodymium, samarium, europium, and gadolinium, at least one third element selected from the group consisting of yttrium, terbium, dysprosium, and holmium, and at least one fourth element selected from the group consisting of erbium, thulium, ytterbium, and lutetium. When the number of atoms of the first element is N(PA), the number of atoms of the second element is N(SA), and the number of atoms of the fourth element is N(CA), 1.5×(N(PA)+N(SA))≤N(CA) or 2×(N(CA)−N(PA))≤N(SA) is satisfied.
ON-CHIP TUNABLE DISSIPATIONLESS INDUCTOR
A controllable superconducting inductor circuit comprises: a plurality of sub-circuits, each sub-circuit comprising: an inductor element; and a control element coupled to the inductor element to induce current in the inductor element in response to a control signal received at the control element. The inductor elements from the plurality of sub-circuits are arranged in parallel between a first pair of nodes to provide a tunable total inductance L.sub.tun. For each of the plurality of sub-circuits, the inductor element behaves as a superconducting kinetic inductance element when the current induced therein is less than a threshold level and behaves as a normal, non-superconducting inductor when the current induced therein is greater than the threshold level.
High temperature superconducting films and methods for modifying and creating same
Operational characteristics of an high temperature superconducting (“HTS”) film comprised of an HTS material may be improved by depositing a modifying material onto appropriate surfaces of the HTS film to create a modified HTS film. In some implementations of the invention, the HTS film may be in the form of a “c-film.” In some implementations of the invention, the HTS film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified HTS film has improved operational characteristics over the HTS film alone or without the modifying material. Such operational characteristics may include operating in a superconducting state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the HTS material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.
Superconductor and method for manufacturing same
According to an embodiment, a superconductor includes a base member, and a superconducting layer provided on the base member. The superconducting layer has a first surface on the base member side, and a second surface on the side opposite to the first surface. The lattice constant of the base member substantially matches the lattice constant of the superconducting layer. The superconducting layer includes REA.sub.1-xREB.sub.xBa.sub.2Cu.sub.3O.sub.7-z. The x is not less than 0.01 and not more than 0.40. The z is not less than 0.02 and not more than 0.20. The REA includes at least one of Y, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu. The REB includes at least one of Nd or Sm. The superconducting layer includes a first surface-side region including a portion of the first surface. The first surface-side region includes a first region having an orientation property, and a second region.