An semiconductor detector includes an n-type semiconductor substrate, a detection electrode formed on a first surface of the semiconductor substrate, a plurality of drift electrodes formed to surround the detection electrode and applied with a voltage causing a potential gradient in which a potential changes toward the detection electrode, a radiation incidence window provided on a second surface of the semiconductor substrate, a P-type semiconductor region formed by adding boron to a surface side on the second surface of the semiconductor substrate through the radiation incidence window, and a depleting electrode causing a reverse bias between the P-type semiconductor region formed on the second surface and an N-type semiconductor region formed in the semiconductor substrate. F is added to the P-type semiconductor region, and a region with the highest concentration of F is located deeper than a region with the highest concentration of B.

Some disclosed embodiments include an electron detector comprising: a first semiconductor layer having a first portion and a second portion; a second semiconductor layer; a third semiconductor layer; a PIN region formed by the first, second, and third semiconductor layers; a power supply configured to apply a reverse bias between the first and the third semiconductor layers; and a depletion region formed within the PIN region by the reverse bias and configured to generate a detector signal based on a first subset of the plurality of signal electrons captured within the depletion region, wherein the second portion of the first semiconductor layer is not depleted and is configured to provide an energy barrier to block a second subset of the plurality of signal electrons and to allow the first subset of the plurality of signal electrons to pass through to reach the depletion region.

Some disclosed embodiments include an electron detector comprising: a first semiconductor layer having a first portion and a second portion; a second semiconductor layer; a third semiconductor layer; a PIN region formed by the first, second, and third semiconductor layers; a power supply configured to apply a reverse bias between the first and the third semiconductor layers; and a depletion region formed within the PIN region by the reverse bias and configured to generate a detector signal based on a first subset of the plurality of signal electrons captured within the depletion region, wherein the second portion of the first semiconductor layer is not depleted and is configured to provide an energy barrier to block a second subset of the plurality of signal electrons and to allow the first subset of the plurality of signal electrons to pass through to reach the depletion region.

Betavoltaic battery devices and methods of making are presented. In embodiments, an electrically inactive betavoltaic battery device comprises: a p-type semiconductor layer including at least one stable isotope that transforms into a beta emitter upon irradiation with thermal neutrons; and an n-type semiconductor beta-absorber layer configured to absorb beta particles; wherein the p-type semiconductor layer and the n-type semiconductor layer form a p-n diode, and wherein the electrically inactive betavoltaic battery device is configured to be transformed into an electrically active betavoltaic battery upon irradiation with thermal neutrons. The electrically inactive betavoltaic battery device may be transported to an irradiation facility, where it is irradiated with thermal neutrons to convert the inactive betavoltaic batter device to an active betavoltaic battery device.

Thermal neutron detectors and methods of fabricating the same are provided. A thermal neutron detector can use boron in both the neutron conversion layer and as a source for conformal doping in a semiconductor substrate. The neutron detector can be a micro-structured diode with cavities having a depth of 60 microns or less. The boron can be filled in the cavities and diffused into the semiconductor substrate via a diffusion annealing process.

Thermal neutron detectors and methods of fabricating the same are provided. A thermal neutron detector can use boron in both the neutron conversion layer and as a source for conformal doping in a semiconductor substrate. The neutron detector can be a micro-structured diode with cavities having a depth of 60 microns or less. The boron can be filled in the cavities and diffused into the semiconductor substrate via a diffusion annealing process.

An isotope capacitor may include a plurality of isotope capacitor sheets that are stacked in a first direction, a first external electrode, and a second external electrode. Each isotope capacitor sheet of the plurality of isotope capacitor sheets includes a substrate including a first material and a second material and a radiation source. The second material may have an electrical conductivity higher than the electrical conductivity of the first material. The second material may be between the first material and the radiation source. The first external electrode and the second external electrode may be configured to transfer electrical energy generated by the plurality of stacked capacitor sheets to an external load.

The present invention relates to a GaN-based radiation detector capable of detecting radiation such as X-rays. The GaN-based radiation detector includes: an n-doped GaN layer having an electron mobility of 700 cm.sup.2/(V.Math.s) or more and a thickness of 300 m or more and doped with an n-type doping concentration of 310.sup.16/cm.sup.3 or less; a p-doped GaN layer formed on one surface of the n-doped GaN layer and having a thickness of 3 m or less and doped with a p-type doping concentration of 510.sup.18/cm.sup.3 or more; a first metal contact formed on the other surface of the n-doped GaN layer; and a second metal contact formed on one surface of the p-doped GaN layer.

The present invention relates to a GaN-based radiation detector capable of detecting radiation such as X-rays. The GaN-based radiation detector includes: an n-doped GaN layer having an electron mobility of 700 cm.sup.2/(V.Math.s) or more and a thickness of 300 m or more and doped with an n-type doping concentration of 310.sup.16/cm.sup.3 or less; a p-doped GaN layer formed on one surface of the n-doped GaN layer and having a thickness of 3 m or less and doped with a p-type doping concentration of 510.sup.18/cm.sup.3 or more; a first metal contact formed on the other surface of the n-doped GaN layer; and a second metal contact formed on one surface of the p-doped GaN layer.