A photo coupler single chip structure and a manufacturing method thereof are provided. The photo coupler single chip structure includes a light-emitting unit, a light-receiving unit and an electrical insulation layer. The electrical insulation layer physically connects the light-emitting unit and the light-receiving unit to two opposite sides of the electrical insulation layer. The light-emitting unit can form an optical signal in response to an input signal. The light-receiving unit will directly absorb the optical signal through the electrical insulating layer and convert it into an output signal.

A light receiving element includes a plurality of pixels, each pixel includes a photoelectric conversion unit that generates carriers according to an amount of received light; a first conductor portion is disposed inside a first insulator that provides insulation between adjacent pixels; a second conductor portion is disposed on an outer edge side of a light receiving region of the photoelectric conversion unit and has an opening region; and a charge accumulation region corresponds to the opening region and is disposed further on an outer edge side than the second conductor portion.

Provided is a photodetection device capable of suppressing characteristic fluctuation of a photoelectric conversion element without requiring a complicated circuit.

A photodetection device according to the present technology includes: a first semiconductor substrate provided with a photoelectric conversion element having an avalanche multiplication region and having first and second surfaces facing each other; a laminated structure disposed on the first surface side and having at least an insulating layer and a conductive layer laminated in this order from a side closer to the first surface; and a potential application structure for applying a potential to the conductive layer. According to the photodetection device of the present technology, it is possible to provide the photodetection device capable of suppressing characteristic fluctuation of the photoelectric conversion element without requiring a complicated circuit.

According to an aspect, a detection device includes: a ring-shaped housing; a light source provided in the housing; a first optical sensor provided in the housing so as to be adjacent to one end of the light source in a circumferential direction of the housing; and a second optical sensor provided in the housing so as to be adjacent to the other end of the light source in the circumferential direction of the housing. At least the first optical sensor is an organic photodiode including a sensor substrate, a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode.

The present disclosure relates to a waveguide-type light-receiving device. An object of the present disclosure is to provide a waveguide-type light-receiving device that can perform efficient photoelectric conversion on incident light, and thus can increase light-receiving sensitivity. A waveguide-type light-receiving device of the present disclosure includes a light-absorbing layer that subjects incident light to photoelectric conversion, and a semiconductor embedding layer in which the light-absorbing layer is embedded. A light-incidence-side end face of the light-absorbing layer forms an angle not parallel with a light-incidence-side end face of the semiconductor embedding layer. The refractive index of the semiconductor embedding layer is lower than the refractive index of the light-absorbing layer.

[Problem] To implement a negative voltage monitoring circuit with high accuracy.

[Solution] A negative voltage monitoring circuit includes a first voltage-dividing circuit, a first amplifier circuit, a second amplifier circuit, and an error determination circuit. The first voltage-dividing circuit divides a power supply voltage and outputs a first voltage. The first amplifier circuit is configured such that the first voltage is inputted to a noninverting input terminal and an output voltage is subjected to negative feedback. The second amplifier circuit is configured such that a second voltage is inputted to the noninverting input terminal, the second voltage being obtained by dividing a potential difference between the power supply voltage and a voltage to be monitored, the voltage being applied to an anode of a light receiving element, and an output voltage is subjected to negative feedback. The error determination circuit outputs an error signal on the basis of a difference between the output of the first amplifier circuit and the output of the second amplifier circuit.

A first light-receiving element of an embodiment of the disclosure includes: a semiconductor substrate including a photoelectric conversion region; a first first electrically-conductive region provided at a first surface interface of the semiconductor substrate and coupled to a first electrode; a second first electrically-conductive region provided around the first first electrically-conductive region and coupled to a second electrode, at the first surface interface; a third first electrically-conductive region in an electrically floating state provided around the second first electrically-conductive region, at the first surface interface; a first second electrically-conductive region having a different electrically-conductive type between the first first electrically-conductive region and the second first electrically-conductive region, at the first surface interface; and a fourth first electrically-conductive region provided at least between the first first electrically conductive region and the first second electrically-conductive region and having an impurity concentration lower than the first first electrically-conductive region, near the first surface interface.