The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a valley inwardly positioned on a top surface of the substrate; a programmable insulating layer conformally positioned on the valley and including a V-shaped cross-sectional profile; and a top electrode positioned on the programmable insulating layer. The programmable insulating layer is configured to be blown out under a programming voltage.

An interposer device includes a core substrate, at least one embedded component formed within the core substrate, and at least one redistribution layer (RDL) on at least one of a first surface of the core substrate or a second surface of the core substrate opposite the first surface.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a valley inwardly positioned on a top surface of the substrate; a programmable insulating layer conformally positioned on the valley and including a V-shaped cross-sectional profile; and a top electrode positioned on the programmable insulating layer. The programmable insulating layer is configured to be blown out under a programming voltage.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a valley inwardly positioned on a top surface of the substrate; a programmable insulating layer conformally positioned on the valley and including a V-shaped cross-sectional profile; and a top electrode positioned on the programmable insulating layer. The programmable insulating layer is configured to be blown out under a programming voltage.

A memory device including a first substrate extending in a first direction and a second direction perpendicular to the first direction, the first substrate including a memory cell region and a first peripheral circuit region, and a second substrate, including a second peripheral circuit region, extending in the first and second direction, the second substrate overlapping the first substrate in a third direction perpendicular to the first and second direction. The memory device also including a memory cell array disposed in the memory cell region and including a plurality of vertical channel structures extending in the third direction, a peripheral circuit disposed in the second peripheral circuit region, and a resistor extending in the third direction through the first peripheral circuit region and the second peripheral circuit region. The resistor including a plurality of resistance contact structures overlapping the plurality of vertical channel structures in the first direction.

A memory device including a first substrate extending in a first direction and a second direction perpendicular to the first direction, the first substrate including a memory cell region and a first peripheral circuit region, and a second substrate, including a second peripheral circuit region, extending in the first and second direction, the second substrate overlapping the first substrate in a third direction perpendicular to the first and second direction. The memory device also including a memory cell array disposed in the memory cell region and including a plurality of vertical channel structures extending in the third direction, a peripheral circuit disposed in the second peripheral circuit region, and a resistor extending in the third direction through the first peripheral circuit region and the second peripheral circuit region. The resistor including a plurality of resistance contact structures overlapping the plurality of vertical channel structures in the first direction.

A semiconductor device is provided. The semiconductor device comprises a substrate, a transistor and a snubber circuit. The transistor and the snubber circuit are disposed on the same substrate, and are electrically connected. The snubber circuit has a polycrystalline silicon layer and a dielectric layer, which are adjacently arranged and electrically connected in series. The polycrystalline silicon layer is electrically connected to a source of the transistor, and the dielectric layer is electrically connected to a drain of the transistor so that the polycrystalline silicon layer acts as a resistor, the dielectric layer acts as a capacitor and the snubber circuit acts as an RC snubber circuit.

A semiconductor device is provided. The semiconductor device comprises a substrate, a transistor and a snubber circuit. The transistor and the snubber circuit are disposed on the same substrate, and are electrically connected. The snubber circuit has a polycrystalline silicon layer and a dielectric layer, which are adjacently arranged and electrically connected in series. The polycrystalline silicon layer is electrically connected to a source of the transistor, and the dielectric layer is electrically connected to a drain of the transistor so that the polycrystalline silicon layer acts as a resistor, the dielectric layer acts as a capacitor and the snubber circuit acts as an RC snubber circuit.