Provided are a piezoluminescence structure, a piezoelectric structure, a manufacturing method thereof, and a high-sensitivity pressure sensor using the same. The piezoelectric structure includes: a plurality of perovskite material layers each including a material having an A.sub.nB.sub.nO.sub.3n perovskite structure; and interlayers inserted between the plurality of perovskite material layers and including A*O which is a metal oxide having reaction resistance to CO.sub.2. Here, A and A* are different elements and are one of an alkaline earth metal element, an alkali metal element, a lanthanide element, and a post-transition metal element, B is a transition metal element, O is an oxygen element, and n is a positive (+) integer. The piezoelectric structure may be a piezoluminescence structure.

A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.

The occurrence of cracking in a functional layer is suppressed, while maintaining flexibility of a layered structure. The layered structure includes a polymer substrate, and a crystalline functional layer formed on the first surface of the substrate. The surface roughness of the first surface of the substrate is 3 nm or less in terms of arithmetic mean roughness (Ra).

A thin-film piezoelectric material elements are arranged on a thin-film piezoelectric material substrate. The thin-film piezoelectric material substrate includes an insulator on Si substrate including a substrate including silicon and an insulating layer on a surface of the substrate. The thin-film piezoelectric material element includes a thin-film laminated part on a top surface of the insulating layer. The thin-film laminated part includes a YZ seed layer including yttrium and zirconium, and formed on the top surface; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film including lead zirconate titanate, shown by a formula Pb (Zr.sub.xTi.sub.(1-x)) O.sub.3(0≤×≤1), and an upper electrode film laminated on the piezoelectric material film. The thin-film laminated part further includes an upper piezoelectric-material protective-film, laminated on the upper side of the upper electrode film.

A display module and a fabrication method thereof, and a display device, and relates to the field of display technologies, to synchronously implement a display function and a surface tactile reproduction function. The display module includes: a base substrate, a plurality of piezoelectric structures positioned on a first side of the base substrate, and at least one isolation portion positioned on the first side of the base substrate and configured to separate any two adjacent piezoelectric structures. A pixel hole is arranged in at least one of three positions, i.e., a position of the piezoelectric structure, a position of the isolation portion, and a position between the piezoelectric structure and the isolation portion. The display module also includes a plurality of pixel structures, and each of the plurality of pixel structures is positioned in one of the pixel holes.

Methods for making metastable lead-free piezoelectric materials are presented herein.

Disclosed is a method for manufacturing a piezoelectric Al.sub.xGa.sub.1-xN (0.5≤x≤1) thin film, comprising: forming a stress control layer comprised of a Group III nitride on a silicon substrate by chemical vapor deposition (CVD); and depositing a piezoelectric Al.sub.xGa.sub.1-xN (0.5≤x≤1) thin film on the stress control layer, the thin film being deposited by PVD at 0.3 Tm (Tm is melting temperature of a piezoelectric thin film material) or higher. Further, a method for manufacturing a device in conjunction with piezoelectric Al.sub.xGa.sub.1-xN (0.5≤x≤1) thin films is provided.

A method of depositing an AlN thin film according to an embodiment of the disclosure comprises: a step of forming an insulating layer on a base substrate; and a step of depositing an AlN thin film on the insulating layer through a sputtering process, wherein the step of depositing the AlN thin film is performed through a continuous deposition type, at lower than a CMOS-compatible process temperature and in a state of applying a bias positive voltage to the base substrate such that the AlN thin film has an adjustable deposition thickness. Therefore, an embodiment of the disclosure is advantageous in that an AlN thin film having excellent piezo characteristics can be obtained at a low process temperature compatible with a CMOS process.

Microelectromechanical systems (MEMS) mesh-membrane nebulizers are described. The MEMS mesh-membrane nebulizers may include a piezoelectric MEMS mesh membrane. The piezoelectric MEMS mesh membrane may include a piezoelectric active layer patterned with openings for making droplets. One electrode of the piezoelectric MEMS mesh membrane may serve as an electrode for electroplating. Activation of the piezoelectric MEMS mesh membrane may generate droplets suitable for delivery of medicines or other uses.

A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.