A nano-mechanical acoustical resonator is designed and fabricated with CMOS compatible techniques to apply to mm-wave RF front-ends and 5G wireless communication systems which have extreme small scale and integrated in 3D sensors and actuators.

A thin-film piezoelectric material substrate includes an insulator on Si substrate and a thin-film laminated part. The insulator on Si substrate has a substrate for deposition made of silicon and an insulating layer formed on a surface of the substrate for deposition. The thin-film laminated part is formed on a top surface of the insulating layer. The thin-film laminated part has a YZ seed layer including yttrium and zirconium, and formed on the top surface; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film made of lead zirconate titanate, shown by general formula Pb(Zr.sub.xTi.sub.(1-x))O.sub.3, and formed on the lower electrode film; and an upper electrode film laminated on the piezoelectric material film.

A piezoelectric device having a high conversion efficiency between electrical energy and mechanical energy is provided. The piezoelectric device has first electrode, a second electrode, and a piezoelectric layer provided between the first electrode and the second electrode, wherein the piezoelectric layer is formed of a ZnO-based material having a wurtzite crystal structure to which a metal that does not cause the piezoelectric layer to exhibit conductivity is added, and wherein a squared value of a electromechanical coupling coefficient in thickness vibration mode is 6.5% or more.

Pulsed DC reactive sputtering of a target deposits an additive-containing aluminium nitride film onto a metallic layer of a semiconductor substrate. The additive-containing aluminium nitride film contains an additive element selected from scandium, yttrium, titanium, chromium, magnesium and hafnium. Depositing the additive-containing aluminium nitride film includes introducing a gaseous mixture comprising nitrogen gas and an inert gas into the chamber at a flow rate, in which the flow rate of the gaseous mixture comprises a nitrogen gas flow rate, and in which the nitrogen gas flow rate is less than or equal to about 50% of the flow rate of the gaseous mixture and also is sufficient to fully poison the target.

A lead-free KNN-based piezoelectric material represented by the composition formula (K.sub.aNa.sub.bLi.sub.c)(Nb.sub.dTa.sub.eSb.sub.f)O.sub.g, where 0.4≤a≤0.5, 0.5≤b≤0.6, 0.01≤c≤0.1, 0.5≤d≤1.0, 0.05≤e≤0.15, 0.01≤f≤0.09, 1≤g≤3. In one embodiment, the lead-free KNN-based piezoelectric material has a d.sub.33>300 pm/V and a T.sub.curie>250° C. In one embodiment, the d.sub.33 and T.sub.curie of the lead-free textured KNN-based piezoelectric material can be adjusted by creating phase boundaries of (i) orthorhombic to tetragonal (O-T), (ii) rhombohedral to orthorhombic (R-O), and (iii) orthorhombic to tetragonal (O-T). In one embodiment, the lead-free KNN-based piezoelectric material is textured with NaNbO.sub.3 or Ba.sub.2NaNb.sub.5O.sub.15 seeds which are platelet or acicular shaped. In one embodiment, the amount, orientation, or particle size distribution of the NaNbO.sub.3 or Ba.sub.2NaNb.sub.5O.sub.15 texturing seeds in the lead-free textured KNN-based piezoelectric material can be altered.

A piezoelectric element is obtained using a method including: preparing a first structure; preparing a second structure; disposing a first facing electrode layer of the first structure to face a first surface of a vibration plate substrate and bonding the first structure to the first surface of the vibration plate substrate; processing the vibration plate substrate into a vibration plate by polishing or etching a second surface of the vibration plate substrate to which the first structure is bonded; preparing a laminate structure by disposing a second facing electrode layer of the second structure to face an exposed surface of the vibration plate and bonding the second structure to the vibration plate; and removing at least a part of a first silicon substrate of the first structure and a second silicon substrate of the second structure from the laminate structure.

Disclosed herein is an apparatus and method for fine tuning properties of a thin film. The method of forming a piezoelectric film includes (a) depositing a first piezoelectric film layer on a surface of a substrate by a first physical vapor deposition (PVD) process. The method includes (b) depositing a second piezoelectric film layer, on top of and in contact with the first piezoelectric film layer, by a second PVD process. A temperature of the substrate is (c) reduced after forming the first piezoelectric film layer and before forming the second piezoelectric film layer. The temperature is reduced by performing a process for a first period of time. Processes (a), (b) and (c) are additionally performed one or more times. Process (c) is performed for a second period of time. The second period of time is different than the first period of time.

An apparatus for forming semiconductor films can include a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber. A central injector column can penetrate through the upper portion of the horizontal flow reactor into the reactor chamber, the central injector column configured to allow metalorganic precursors into the reactor chamber in the closed position. A heated metalorganic precursor line can be coupled to the central injector column and configured to heat a low vapor pressure metalorganic precursor vapor contained in the heated metalorganic precursor line upstream of the central injector column to a temperature range between about 70 degrees Centigrade and 200 degrees Centigrade and a processor circuit can be operatively coupled to the heated metalorganic precursor line and configured to maintain a temperature of the low vapor pressure metalorganic precursor vapor within the temperature range.

An acoustic wave element includes: a substrate; a bonding structure on the substrate; a support layer on the bonding structure; a first electrode including a lower surface on the support layer; a cavity positioned between the support layer and the first electrode and exposing a lower surface of the first electrode; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer, wherein at least one of the first electrode and the second electrode includes a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance, and the second electrical impedance is lower than the first electrical impedance.

Provided is a piezoelectric thin film containing a tetragonal crystal 1 of a perovskite type oxide and a tetragonal crystal 2 of the oxide. A (001) plane of the tetragonal crystal 1 and a (001) plane of the tetragonal crystal 2 are oriented in a normal direction of a surface of the piezoelectric thin film. An interval of the (001) plane of the crystal 1 is c1. An interval of a (100) plane of the crystal 1 is a1. An interval of the (001) plane of the crystal 2 is c2. An interval of a (100) plane of the crystal 2 is a2. c2/a2 is more than c1/a1. A peak intensity of diffracted X-rays of the (001) plane of the crystal 1 is I.sub.1. A peak intensity of diffracted X-rays of the (001) plane of the crystal 2 is I.sub.2. I.sub.2/(I.sub.1+I.sub.2) is from 0.50 to 0.90.