A thin-film piezoelectric-material element includes a laminated structure part having a lower electrode film, a piezoelectric-material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric-material film, a lower piezoelectric-material protective-film being formed with alloy material, and an upper piezoelectric-material protective-film being formed with alloy material. The lower piezoelectric-material protective-film and the upper piezoelectric-material protective-film are formed respectively in the lower side of the lower electrode film and the upper side of the upper electrode film, of the laminated structure part, so as to sandwich the laminated structure part. The lower piezoelectric-material protective-film, and the upper piezoelectric-material protective-film are formed with alloy material including Fe as main ingredient and having Co and Mo, by Ion beam deposition.

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

A thin-film piezoelectric-material element includes a laminated structure part having a lower electrode film, a piezoelectric-material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric-material film, a lower piezoelectric-material protective-film being formed with alloy material, and an upper piezoelectric-material protective-film being formed with alloy material. The lower piezoelectric-material protective-film and the upper piezoelectric-material protective-film are formed respectively in the lower side of the lower electrode film and the upper side of the upper electrode film, of the laminated structure part, so as to sandwich the laminated structure part.

A thin-film piezoelectric-material element includes a laminated structure part having a lower electrode film, a piezoelectric-material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric-material film, a lower piezoelectric-material protective-film being formed with alloy material, and an upper piezoelectric-material protective-film being formed with alloy material. The piezoelectric-material film includes a size larger than the upper electrode film, a riser end-surface and step-surface formed on a top-surface of the upper electrode film side. The riser end-surface connects smoothly with a peripheral end-surface of the upper electrode film and vertically intersects with the top-surface. The step-surface intersects vertically with the riser end-surface. The lower piezoelectric-material protective-film, and the upper piezoelectric-material protective-film are formed with alloy material including Fe as main ingredient and having Co and Mo, by Ion beam deposition.

A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABO.sub.3 as a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least one selected from the group consisting of Nb (niobium), Ta (tantalum) and Zr (zirconium) with Nb (niobium) as a necessity, the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains and grain boundaries existing among the crystal grains, and in the grain boundary, the molar ratio of at least one of Nb (niobium), Ta (tantalum), and Zr (zirconium) in the B components is higher than the molar ratio in the interior of the crystal grains by 30% or more.

An acoustic wave filter includes a substrate, a first resonator disposed on the substrate, a second resonator disposed on the substrate to be spaced apart from the first resonator, a connector electrically connecting the first and second resonators, and a variable capacitor formed in the connector to tune a pass band frequency of the acoustic wave filter.

Microelectromechanical systems (MEMS) mesh-membrane nebulizers are described. The MEMS mesh-membrane nebulizers may include a piezoelectric MEMS mesh membrane. The piezoelectric MEMS mesh membrane may include a piezoelectric active layer patterned with openings for making droplets. One electrode of the piezoelectric MEMS mesh membrane may serve as an electrode for electroplating. Activation of the piezoelectric MEMS mesh membrane may generate droplets suitable for delivery of medicines or other uses.

Embodiments of the invention include a wearable blood-pressure monitor and methods of forming such devices. In an embodiment, the blood-pressure monitor includes a stretchable substrate. Additionally, a semiconductor die may be embedded within the stretchable substrate. In order to determine blood-pressure, the blood-pressure monitor may include an electrocardiogram sensor and a piezoelectric sensor for detecting a ballistocardiograph response. In an embodiment, both types of sensor may be electrically coupled to the semiconductor die. Embodiments of the invention include a piezoelectric sensor that includes a piezoelectric layer and a first and second electrode. In an embodiment the first electrode is in contact with a first surface of the piezoelectric layer, and the second electrode is in contact with a second surface of the piezoelectric layer that is opposite to the first surface.

A film forming device includes an adhesion preventing mechanism in a film formation chamber, in which the adhesion preventing mechanism is configured with a plurality of adhesion preventing plates including at least a substrate edge adhesion preventing plate that is provided on an edge of a region on the substrate holding portion where the substrate is provided and a substrate outer peripheral region adhesion preventing plate that is disposed on an outer periphery of the substrate edge adhesion preventing plate to be spaced from the substrate edge adhesion preventing plate, a potential adjusting mechanism that is electrically connected to any one of the substrate edge adhesion preventing plate or the substrate outer peripheral region adhesion preventing plate is provided, and the adhesion preventing plate connected to the potential adjusting mechanism and an adhesion preventing plate disposed adjacent thereto are disposed at an interval of 0.5 mm to 3.0 mm.

Disclosed are a method of manufacturing a piezoelectric thin film and a piezoelectric sensor manufactured using the piezoelectric thin film. A piezoelectric sensor according to an embodiment of the present disclosure includes a substrate; a lower electrode formed on the substrate; a two-dimensional perovskite nanosheet seed layer formed on the lower electrode; a ceramic piezoelectric thin film formed on the two-dimensional perovskite nanosheet seed layer; and an upper electrode formed on the ceramic piezoelectric thin film, wherein each of the two-dimensional perovskite nanosheet seed layer and the ceramic piezoelectric thin film has a crystal structure.