A semiconductor device includes a first substrate having opposite first and second sides, a first conductive layer on the first side of the first substrate, and a second substrate having opposite first and second sides. The second side of the second substrate is over the first side of the first substrate. The second substrate includes a semiconductor material, and a Schottky diode electrically coupled to the first conductive layer. The Schottky diode is configured by a first doped region in a first portion of the semiconductor material and a first contact structure. The first doped region contains a dopant at a concentration different from a remainder of the first portion of the semiconductor material to form a Schottky contact with the first contact structure.

A varactor structure including a substrate, a first conductive layer, a second conductive layer, a first dielectric layer, a second dielectric layer, a first doped region, and a second doped region is provided. The first conductive layer is located on the 5 substrate. The second conductive layer is located on the first conductive layer. The first dielectric layer is located between the substrate and the first conductive layer. The second dielectric layer is located between the first conductive layer and the second conductive layer. The first doped region and the second doped region are located in the substrate at two sides of the first conductive layer. The second conductive layer is 10 electrically connected to the first doped region and the second doped region.

Various embodiments of the present disclosure are directed towards an integrated chip including a well region in a substrate and comprising a first dopant type. A dielectric layer is over the well region. A conductive structure is over the dielectric layer. A first doped region and a second doped region are in the substrate and comprise the first dopant type. The conductive structure is spaced laterally between the first and second doped regions. A depletion enhancement region is in the substrate and is below the well region. The depletion enhancement region comprises a second dopant type different from the first dopant type and buts a bottom of the well region.

Semiconductor structures and a method of forming the same are provided. In an embodiment, an exemplary semiconductor structure includes a doped region in a substrate and comprising a first-type dopant, a plurality of nanostructures disposed directly over the doped region, a gate structure wrapping around each nanostructure of the plurality of nanostructures, a first epitaxial feature and a second epitaxial feature coupled to the plurality of nanostructures, wherein each of the first epitaxial feature and the second epitaxial feature comprises the first-type dopant, a first insulation feature disposed between the first epitaxial feature and the doped region, and a second insulation feature disposed between the second epitaxial feature and the doped region.

The present disclosure relates to semiconductor structures and, more particularly, to a common-gate amplifier circuit and methods of operation. The structure includes at least one well in a substrate, a first metal layer connected to a gate of a transistor circuit, a second metal layer overlapped over the first metal layer to form a capacitor, and a third metal layer connected with vias to the first metal layer and overlapped with the second metal layer to form a second capacitor. At least one capacitance in at least one of a junction between the at least one well and the substrate and between overlapped metal layers of the first metal layer, the second metal layer, and the third metal layer.

The present application relates to a multi-layer ceramic capacitor and a method for producing the same. Internal electrode layers and ceramic dielectric layers are firstly formed, and the internal electrode layers and the ceramic dielectric layers are alternately laminated to form a laminated stack. The internal electrode layers are formed from specific metal particles. Next, a sintering process is performed to the laminated stack to form a laminated ceramic body, and then end electrodes are formed on two ends of the laminated ceramic body, thereby producing the multi-layer ceramic capacitor of the present application with excellent continuity of the internal electrode and better capacitor properties and reliability.

A semiconductor device includes a first substrate having opposite first and second sides, a first conductive layer on the first side of the first substrate, and a second substrate having opposite first and second sides. The second side of the second substrate is bonded to the first side of the first substrate. The second substrate includes a semiconductor material, and at least one circuit element electrically coupled to the first conductive layer. The at least one circuit element includes at least one of a Schottky diode configured by the semiconductor material and a first contact structure, a capacitor having a first electrode of the semiconductor material, or a resistor of the semiconductor material.

Disclosed are a semiconductor structure and a manufacturing method therefor. The manufacturing method includes the following: a stack is formed on a base; multiple bottom electrodes are formed in the stack, each of the bottom electrodes including a body portion in the stack and an extension portion protruding from the stack; the extension portion is etched, so that a horizontal width of the extension portion is less than a horizontal width of the body portion; a dielectric layer and a conductive film layer are successively formed on the stack, the extension portion being covered by the dielectric layer and the conductive film layer; the conductive film layer is etched to expose the stack and form multiple conductive support layers; the stack is etched to expose the body portion; a dielectric layer is formed on the body portion; and a top electrode is formed on the dielectric layer.

Structures for a varactor diode and methods of forming same. The structure comprises a first semiconductor layer including a section on a substrate, a second semiconductor layer on the section of the first semiconductor layer, a third semiconductor layer on the second semiconductor layer, and a doped region in the section of the first semiconductor layer. The section of the first semiconductor layer and the doped region have a first conductivity type, and the second semiconductor layer comprises silicon-germanium having a second conductivity type opposite to the first conductivity type, and the third semiconductor layer has the second conductivity type. The doped region contains a higher concentration of a dopant of the first conductivity type than the section of the first semiconductor layer. The second semiconductor layer abuts the first section of the first semiconductor layer along an interface, and the doped region is positioned adjacent to the interface.