Disclosed are a photodiode element, and a sensor and an electronic device including the same. The photodiode element includes a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and the second electrode and having an absorption spectrum in a first wavelength spectrum, a light-emitting layer between the photoelectric conversion layer and the second electrode and having an emission peak wavelength belonging to the first wavelength spectrum, and a first charge transport layer between the photoelectric conversion layer and the light-emitting layer.

A heteroepitaxial semiconductor device includes a bulk semiconductor substrate, a seed layer including a first semiconductor material, the seed layer being arranged at a first side of the bulk semiconductor substrate and including a first side facing the bulk semiconductor substrate, an opposing second side and lateral sides connecting the first and second sides, a separation layer arranged between the bulk semiconductor substrate and the seed layer, a heteroepitaxial structure grown on the second side of the seed layer and including a second semiconductor material, different from the first semiconductor material, and a dielectric material layer arranged on the seed layer and at least partially encapsulating the heteroepitaxial structure, wherein the dielectric material layer also covers the lateral sides of the seed layer.

A heteroepitaxial semiconductor device includes a bulk semiconductor substrate, a seed layer including a first semiconductor material, the seed layer being arranged at a first side of the bulk semiconductor substrate and including a first side facing the bulk semiconductor substrate, an opposing second side and lateral sides connecting the first and second sides, a separation layer arranged between the bulk semiconductor substrate and the seed layer, a heteroepitaxial structure grown on the second side of the seed layer and including a second semiconductor material, different from the first semiconductor material, and a dielectric material layer arranged on the seed layer and at least partially encapsulating the heteroepitaxial structure, wherein the dielectric material layer also covers the lateral sides of the seed layer.

A photodiode and a manufacturing method thereof are provided. The photodiode includes a light-receiving substrate and a coating layer. The coating layer covers the light-receiving substrate and has at least one surface that is non-parallel to the upper surface of the light-receiving substrate. When an external light signal passes through the coating layer, it will be received and converted into an electrical signal by the light-receiving substrate.

A photodiode and a manufacturing method thereof are provided. The photodiode includes a light-receiving substrate and a coating layer. The coating layer covers the light-receiving substrate and has at least one surface that is non-parallel to the upper surface of the light-receiving substrate. When an external light signal passes through the coating layer, it will be received and converted into an electrical signal by the light-receiving substrate.

The present disclosure provides a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a sensing device, a solar cell, and an interconnecting structure. The solar cell is disposed above the sensing device and is electrically connected to the sensing device. The interconnecting structure is disposed between the sensing device and the solar cell and has a first surface facing the solar cell and a second surface facing the sensing devices. The interconnecting structure comprises a first energy storage component and a second energy storage component. The first energy storage component is disposed closer to the first surface of the interconnecting structure than the second energy storage component.

The present disclosure relates to a semiconductor device, an image processing apparatus, and a method for operating the image processing apparatus. The semiconductor device includes a first electrode layer, a charge storage layer, an active layer, a second electrode layer, and a photo-sensitive layer. The charge storage layer is disposed on the first electrode layer and the base substrate and stores charges injected by a gate voltage applied to the first electrode layer. The active layer is disposed on the charge storage layer and injects charges into the charge storage layer based on the gate voltage. The second electrode layer is in contact with a portion of the active layer to be electrically connected to the active layer. The photo-sensitive layer is disposed on the active layer and provides charge to the active layer based on an optical signal.

The present disclosure relates to a semiconductor device, an image processing apparatus, and a method for operating the image processing apparatus. The semiconductor device includes a first electrode layer, a charge storage layer, an active layer, a second electrode layer, and a photo-sensitive layer. The charge storage layer is disposed on the first electrode layer and the base substrate and stores charges injected by a gate voltage applied to the first electrode layer. The active layer is disposed on the charge storage layer and injects charges into the charge storage layer based on the gate voltage. The second electrode layer is in contact with a portion of the active layer to be electrically connected to the active layer. The photo-sensitive layer is disposed on the active layer and provides charge to the active layer based on an optical signal.

A radiation sensor has a substrate, a radiation sensitive chip thereon, a radiation impermeable frame joined to the chip side surfaces and surrounding the chip, and a radiation permeable layer over the chip. The frame does not project or does not substantially project over the upper edge of the chip along a substantial part of its inner periphery. The radiation permeable layer value projects over the chip in the lateral direction and is on the frame or above it.

A radiation sensor has a substrate, a radiation sensitive chip thereon, a radiation impermeable frame joined to the chip side surfaces and surrounding the chip, and a radiation permeable layer over the chip. The frame does not project or does not substantially project over the upper edge of the chip along a substantial part of its inner periphery. The radiation permeable layer value projects over the chip in the lateral direction and is on the frame or above it.