The present invention provides a semiconductor device capable of reducing the offset drift of an amplifier which is caused by the NBTI of a p-channel MOS transistor. The semiconductor device includes: an n-channel MOS transistor formed on a main surface of a substrate using silicon carbide, and a p-channel MOS transistor formed on a main surface of a substrate using silicon carbide. Each of the n-channel MOS transistor and the p-channel MOS transistor has, on the main surface of the substrate, a gate electrode via a gate oxide film, and a dangling bond is terminated, at an interface between the substrate and the gate oxide film, by an element added, and a concentration of the element with which the dangling bond is terminated in the p-channel MOS transistor is smaller than that with which the dangling bond is terminated in the n-channel MOS transistor.