H10F55/26

OPTICAL CHIP AND AN OPTICAL MODULE
20250341692 · 2025-11-06 · ·

An optical chip and an optical module. The optical chip includes: an optical device; an optical power detector, connected to the optical device; a waveguide, used for transmitting light emitted from the optical device; and a detection material, formed inside the waveguide and/or on a surface of the waveguide. The detection material absorbs light transmitted by the waveguide and generates a preset effect, and the preset effect changes a preset parameter value of the detection material. The optical chip can simply and effectively integrate the optical power detector.

OPTICALLY QUENCHABLE CARBON-DOPED GALLIUM NITRIDE PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES
20260020356 · 2026-01-15 ·

Devices, systems and methods for operating and using an optically quenchable carbon-doped gallium nitride photoconductive semiconductor switch (PCSS) are described. An example method includes illuminating a carbon-doped gallium nitride material of the photoconductive semiconductor switch with a first laser light within a first range of wavelengths to trigger the photoconductive semiconductor switch to a conductive state, turning off or blocking the first laser light, and illuminating the carbon-doped gallium nitride material with a second laser light within a second range of wavelengths to trigger the photoconductive semiconductor switch to an insulating state. In this example, the first range of wavelengths comprises an ultraviolet (UV) or a blue wavelength range, the second range of wavelengths comprises an infrared (IR) or a red wavelength range, and switching from the conductive state to the insulating state occurs within a sub-nanosecond range.

Semiconductor device

The disclosed semiconductor device includes a region provided with a plurality of circuit blocks each including an avalanche photodiode. A part of the plurality of circuit blocks is a pixel circuit further including a first control circuit configured to control the avalanche photodiode to a standby state in which an avalanche multiplication is possible and a recharging state in which the avalanche photodiode is returned to a state in which the avalanche multiplication is possible after the avalanche multiplication occurs, in response to the first control signal, and another part of the plurality of circuit blocks is a signal generation circuit configured to generate a signal corresponding to a waveform of the first control signal. The signal generation circuit is configured not to output a signal corresponding to the output of the avalanche photodiode.

LIGHT SENSOR INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF
20260090129 · 2026-03-26 ·

There is provided a light sensor integrated circuit including a silicon bond pad, a light source die and a photodiode. The silicon bond pad is formed with conductive epoxy using non-contact dispensing. The conductive epoxy is used to fix the light source die on the silicon bond pad. The light source die is used to emit light toward an encoding medium to generate modulated reflection light propagating to the photodiode.