A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.

A resonator includes a surface silicon layer as a base material, a first silicon oxide layer disposed on a first surface of the surface silicon layer, and a second silicon oxide layer disposed on the opposite side to the surface silicon layer of the first silicon oxide layer, wherein when the thickness of the surface silicon layer is represented by tsi, the thickness of the first silicon oxide layer is represented by ta, and the thickness of the second silicon oxide layer is represented by tb, the following relationships are satisfied: 0.138?tsi<ta<0.268?tsi and 0.189?tsi<tb<0.527?tsi.

A rectangular quartz crystal blank having long sides substantially parallel to a Z axis of the quartz crystal blank, and short sides substantially parallel to an X axis of the quartz crystal blank. The quartz crystal blank includes a first center region, a second region and a third region that are adjacent to the first region along a long-side direction, and a fourth region and a fifth region that are adjacent to the first region along a short-side direction. A thickness of the second region and a thickness of the third region are smaller than the thickness of the first region, and/or a thickness of the fourth region and a thickness of the fifth region are smaller than the thickness of the first region, and 12.26W/T13.02, where W is a length of a short side and T is a thickness.

A surface acoustic wave device includes a high acoustic velocity film in which a transversal wave propagates at a higher acoustic velocity than in a ScAlN film laminated on a substrate made of silicon or glass. The ScAlN film is laminated on the high acoustic velocity film, and IDT electrodes are laminated on the ScAlN film.

A piezoelectric bimorph actuator with an integral compliant boundary employs a first piezoelectric element, a second piezoelectric element and a composite layer intimately engaged between the first and second piezoelectric elements to form a bimorph actuator. The composite layer extends from a peripheral edge of the piezoelectric elements and has a curved interface portion providing a mount for attachment of the bimorph actuator.

Embodiments of the invention include a sensing device that includes a base structure having a proof mass that is positioned in proximity to a cavity of an organic substrate, a piezoelectric material in contact with a first electrode of the base structure, and a second electrode in contact with the piezoelectric material. The proof mass deflects in response to application of an external force or acceleration and this deflection causes a stress in the piezoelectric material which generates a voltage differential between the first and second electrodes.

Degenerately doped semiconductor materials are deployed within resonant structures to control the first and higher order temperature coefficients of frequency, thereby enabling temperature dependence to be engineered without need for cumulative material layers which tend to drive up cost and compromise resonator performance.

A compound semiconductor device includes: a flexible part; a first nitride semiconductor layer above a surface of the flexible part, the first nitride semiconductor layer including a first polar plane and a second polar plane intersecting the surface; a second nitride semiconductor layer in contact with the first nitride semiconductor layer on the first polar plane, a lattice constant of the second nitride semiconductor layer being different from that of the first nitride semiconductor layer; a third nitride semiconductor layer in contact with the first nitride semiconductor layer on the second polar plane, a lattice constant of the third nitride semiconductor layer being different from that of the first nitride semiconductor layer; a first ohmic electrode above an interface between the first nitride semiconductor layer and the second nitride semiconductor layer; and a second ohmic electrode above an interface between the first nitride semiconductor layer and the third nitride semiconductor layer.

Provided is an ultrasonic motor including an annular vibrator and an annular moving member that is brought into pressure-contact with the vibrator. The vibrator includes an annular vibrating plate and an annular piezoelectric element. The piezoelectric element includes an annular lead-free piezoelectric ceramic piece, a common electrode arranged on one surface of the piezoelectric ceramic piece, and a plurality of electrodes arranged on the other surface of the piezoelectric ceramic piece. The plurality of electrodes include two drive phase electrodes, one or more non-drive phase electrodes, and one or more detection phase electrodes. A second surface of the vibrating plate includes a plurality of groove regions extending radially, and the depths of the groove regions change in a circumferential direction along a curve obtained by superimposing one or more sine waves on one another. The ultrasonic motor exhibits a sufficient drive speed while suppressing generation of an unnecessary vibration wave.

Provided are an ultrasonic motor and a drive control system and the like using the ultrasonic motor. The ultrasonic motor includes an annular vibrator and an annular moving member arranged so as to be brought into pressure-contact with the vibrator. The vibrator includes an annular vibrating plate and an annular piezoelectric element. The piezoelectric element includes an annular piezoelectric ceramic piece, a common electrode arranged on one surface of the piezoelectric ceramic piece, and a plurality of electrodes arranged on the other surface of the piezoelectric ceramic piece. The piezoelectric ceramic piece contains lead in a content of less than 1,000 ppm. The plurality of electrodes include two drive phase electrodes, one or more non-drive phase electrodes, and one or more detection phase electrodes.