A method for manufacturing a thermoelectric device where a first part formed in a first doped material and a second part formed in a second doped material each shaped like a comb are manufactured, before being assembled together and electrically connected. Then, the first base of the first part is sectioned into at least one first area and the second base of the second part is sectioned into at least one second area. Each first branch of the first part and each second branch of the second part separated respectively constitute a first element and a second element of a thermoelectric junction, electrically connected via portion of the second base that links them. In addition, each first branch and each second branch separated by a second area constitute a first element and a second element of a thermoelectric junction, electrically connected via the portion of the first base.

Novel compounds with thermoelectric properties are presented. The novel compounds belong to the group of phosphides. They are characterized by excellent thermoelectric properties, in particularly in the temperature range of 400° C. to 700° C. Also a production method for the production of the compounds is presented, with which the thermoelectric substances can be prepared with high yield and quality.

A thermoelectric module that has excellent thermal, electric properties, can realize high joining force between thermoelectric elements and an electrode, and can maintain stable joining even at a high temperature.

Polycrystalline magnesium silicide containing only carbon as a dopant and having carbon distributed at the crystal grain boundaries and within the crystal grains, a thermoelectric conversion material obtained using the polycrystalline magnesium silicide, a sintered compact, a thermoelectric conversion element, and a thermoelectric conversion module, and methods for producing polycrystalline magnesium silicide and a sintered compact.

A novel compound semiconductor which can be used for a solar cell, a thermoelectric material, or the like, and the use thereof.

A thermoelectric conversion element includes: a thermoelectric conversion material portion composed of a material having a band gap; a first electrode disposed in contact with the thermoelectric conversion material portion; a second electrode disposed in contact with the thermoelectric conversion material portion and disposed to be separated from the first electrode; and a sealing portion that seals the thermoelectric conversion material portion. A partial pressure of oxygen in a region surrounding the thermoelectric conversion material portion is maintained by the sealing portion so as to be lower than a partial pressure of oxygen in an external air.

In some embodiments, thermoelectric apparatus and various applications of thermoelectric apparatus are described herein. In some embodiments, a thermoelectric apparatus described herein comprises at least one p-type layer coupled to at least one n-type layer to provide a pn junction, and an insulating layer at least partially disposed between the p-type layer and the n-type layer, the p-type layer comprising a plurality of carbon nanoparticles and the n-type layer comprising a plurality of n-doped carbon nanoparticles.

Disclosed is a compound semiconductor material with excellent performance and its utilization. The compound semiconductor may be expressed by Chemical Formula 1 below:
M1.sub.aCo.sub.4Sb.sub.12-xM2.sub.x  Chemical Formula 1 where M1 and M2 are respectively at least one selected from In and a rare earth metal element, 0≤a≤1.8, and 0≤x≤0.6.

An object of the present invention is to provide a thermoelectric conversion element which includes a p-type thermoelectric conversion layer and an n-type thermoelectric conversion layer, has excellent power generation capacity and durability, and inhibits a variation in power generation capacity between lots. The thermoelectric conversion element of the present invention is a thermoelectric conversion element having a p-type thermoelectric conversion layer and an n-type thermoelectric conversion layer electrically connected to the p-type thermoelectric conversion layer, in which the p-type thermoelectric conversion layer contains a nanocarbon material and at least one kind of component selected from the group consisting of an onium salt and an inorganic salt, the n-type thermoelectric conversion layer contains a nanocarbon material and an onium salt, and a difference between an ionization potential of the p-type thermoelectric conversion layer and an ionization potential of the n-type thermoelectric conversion layer is equal to or smaller than 0.15 eV.

An apparatus and method perform supersonic cold-spraying to deposit N and P-type thermoelectric semiconductor, and other polycrystalline materials on other materials of varying complex shapes. The process developed has been demonstrated for bismuth and antimony telluride formulations as well as Tetrahedrite type copper sulfosalt materials. Both thick and thin layer thermoelectric semiconductor material is deposited over small or large areas to flat and highly complex shaped surfaces and will therefore help create a far greater application set for thermoelectric generator (TEG) systems. This process when combined with other manufacturing processes allows the total additive manufacturing of complete thermoelectric generator based waste heat recovery systems. The processes also directly apply to both thermoelectric cooler (TEC) systems, thermopile devices, and other polycrystalline functional material applications.