A MEMS component includes, on a substrate, component structures, contact areas connected to the component structures, metallic column structures seated on the contact areas, and metallic frame structures surrounding the component structures. A cured resist layer is seated on frame structure and column structures such that a cavity is enclosed between substrate, frame structure and resist layer. A structured metallization is provided directly on the resist layer or on a carrier layer seated on the resist layer. The structured metallization includes at least external contacts of the component and being electrically conductively connected both to metallic structures and to the contact areas of the component structures.

Disclosed is a method of manufacturing a piezoelectric substrate, the method including: forming an intermediate layer of Ti and a lower electrode of Pt oriented in a (111) axis direction on a substrate without heating the substrate; applying a coating liquid for forming an orientation control layer made of lead titanate onto the lower electrode; drying the coating liquid at a predetermined temperature to form an orientation control layer precursor made of lead titanate; applying a coating liquid for forming a piezoelectric thin film made of lead zirconate titanate; drying the coating liquid at a predetermined temperature to form a piezoelectric precursor made of a lead zirconate titanate precursor; and collectively firing the orientation control layer precursor and the piezoelectric precursor to crystallize both the precursors, to thereby form a piezoelectric thin film made of lead zirconate titanate preferentially oriented in a (110) plane.

An ultrasound-on-a-chip device has an ultrasonic transducer substrate with plurality of transducer cells, and an electrical substrate. For each transducer cell, one or more conductive bond connections are disposed between the ultrasonic transducer substrate and the electrical substrate. Examples of electrical substrates include CMOS chips, integrated circuits including analog circuits, interposers and printed circuit boards.

A piezoelectric device includes a body provided with a first region and a second region lined along a first direction. The first region deformably extends/contracts along the first direction. The second region deformably curves in such a manner that one or the other side in a second direction intersecting the first direction curves outward.

A method for forming a pressure sensor includes forming a base of a sapphire material, the base including a cavity formed therein; forming a sapphire membrane on top of the base and over the cavity; forming a lower electrode on top of the membrane; forming a piezoelectric material layer on an upper surface of the lower electrode, the piezoelectric material layer being formed of aluminum nitride (AIN); and forming at least one upper electrode on an upper surface of the piezoelectric material layer.

A stacked film includes an oxide film including a ZrO.sub.2 film, a metal oxide film provided on the oxide film, and a predetermined metal film provided on the metal oxide film and having a single orientation, and the metal oxide film is a PtO film or a PdO film. In the case of this structure, the predetermined metal film has a single orientation, and characteristics of the piezoelectric film such as PZT formed on the predetermined metal film are improved. Therefore, excellent characteristics such as an increase in the driving force due to the piezoelectric film or a reduction in leakage current can be exhibited.

A BAW component, a lamination for a BAW component, and a method for manufacturing a BAW component are provided. A lamination for a BAW component includes a first layer with a first piezoelectric material and a second layer with a second piezoelectric material that is different than the first piezoelectric material. The first and the second piezoelectric material can be Sc doped AlN and AlN, respectively.

In an ultrasonic transducer manufacturing method, an ultrasonic device is mounted on a substrate, and a protective film having an acoustic matching layer thereon is prepared. Then, the protective film having the acoustic matching layer thereon is placed over the ultrasonic device such that the acoustic matching layer is in contact with the ultrasonic device.

A manufacturing method of an epitaxial thin film piezoelectric element includes: providing a substrate; forming a bottom electrode layer on the substrate by epitaxial growth process; forming a first piezoelectric layer that has c-axis orientation on the bottom electrode layer by epitaxial growth process; forming a second piezoelectric layer that has c-axis orientation and different phase structure from the first piezoelectric layer on the first piezoelectric layer by epitaxial growth process; and forming a top electrode layer on the second piezoelectric layer. The thin film piezoelectric element has good thermal stability, low temperature coefficient and high piezoelectric constant.

The present disclosure provides a fingerprint recognition module, a driving method thereof, a manufacturing method thereof, and a display device. The fingerprint recognition module includes a receiving electrode layer, a piezoelectric material layer, and a driving electrode layer. The receiving electrode layer includes a plurality of receiving electrodes arranged in an array along a first direction and a second direction. The piezoelectric material layer is disposed on a side of the receiving electrode layer. The driving electrode layer is disposed on a side of the piezoelectric material layer remote from the receiving electrode layer and includes a plurality of driving electrodes arranged along the second direction. Each driving electrode is a strip electrode extending along the first direction, and overlaps with multiple receiving electrodes arranged along the first direction.