Provided is a method of manufacturing an ultrasound probe. The method includes: preparing a backing layer having first and second surfaces with different heights due to forming a groove in the backing layer, wherein first and second electrodes are exposed on the first and second surfaces, respectively; forming a third electrode that is in contact with the first electrode; forming a base piezoelectric unit on the third electrode, the base piezoelectric unit including a piezoelectric layer; forming a piezoelectric unit by removing an upper region of the base piezoelectric unit; and forming a fourth electrode on the backing layer and the piezoelectric unit.

Methods are described for constructing a mechanical resonating structure by applying an active layer on a surface of a compensating structure. The compensating structure comprises one or more materials having an adaptive resistance to deform that reduces a variance in a resonating frequency of the mechanical resonating structure, wherein at least the active layer and the compensating structure form a mechanical resonating structure having a plurality of layers of materials A thickness of each of the plurality of layers of materials results in a plurality of thickness ratios therebetween.

A piezoelectric resonator includes a piezoelectric thin film including a functional conductor, a fixing layer provided on a principal surface of the piezoelectric thin film to define a void that overlaps a functional portion region, and a support substrate on a principal surface of the fixing layer. A sacrificial layer is provided on a principal surface of a piezoelectric substrate and the fixing layer is provided on the principal surface of the piezoelectric substrate to cover the sacrificial layer. The support substrate is attached to a surface of the fixing layer and the piezoelectric thin film is peeled from the piezoelectric substrate. The functional conductor is provided on the piezoelectric thin film, a through hole is provided in the piezoelectric thin film to straddle a boundary between the fixing layer and the sacrificial layer, and the sacrificial layer is removed by wet etching using the through hole to form the void.

A method for treating a layer of composition ABO.sub.3, wherein A is a first material composition consisting of at least one element selected from the group consisting of: Li, Na, K, H, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag, and Tl, and wherein B is a second material composition consisting of at least one element selected from the group consisting of: Nb, Ta, Sb, Ti, Zr, Sn, Ru, Fe, V, Sc, C, Ga, Al, Si, Mn, Zr, and Tl, is described. The method includes implanting an ionic species into a donor substrate of the composition ABO.sub.3, thereby forming a weakened zone delineating the layer, detaching the layer from the donor substrate along the weakened zone, and exposing the detached layer to a medium containing ions of a constituent element A, such that the ions penetrate into the layer.

A fingerprint identification module and a driving method thereof and an electronic device are provided. In the fingerprint identification module, a receiving electrode layer includes a plurality of receiving electrodes; a first driving electrode layer is arranged at a side of a piezoelectric material layer away from the receiving electrode layer and includes a plurality of first driving electrodes; a second driving electrode layer is arranged at a side of the receiving electrode layer away from the piezoelectric material layer and includes a plurality of second driving electrodes; the plurality of first driving electrodes and the plurality of second driving electrodes form a plurality of driving electrode pairs, and in each driving electrode pair, an orthographic projection of the first driving electrode on the piezoelectric material layer is at least partially overlapped with an orthographic projection of the second driving electrode on the piezoelectric material layer.

Provided are a piezoelectric element for a speaker and a method of manufacturing the same. The piezoelectric element for a speaker includes a plurality of piezoelectric ceramic layers stacked on one another in a thickness direction, and a plurality of electrodes provided to be connected to middle portions of sides of the plurality of piezoelectric ceramic layers along external walls of the plurality of stacked piezoelectric ceramic layers, wherein middle portions of some sides from among a plurality of sides of each of the plurality of piezoelectric ceramic layers are etched, and wherein the plurality of piezoelectric ceramic layers are stacked on one another in the thickness direction not to overlap non-etched sides from among the plurality of sides.

Provided are a piezoluminescence structure, a piezoelectric structure, a manufacturing method thereof, and a high-sensitivity pressure sensor using the same. The piezoelectric structure includes: a plurality of perovskite material layers each including a material having an A.sub.nB.sub.nO.sub.3n perovskite structure; and interlayers inserted between the plurality of perovskite material layers and including A*O which is a metal oxide having reaction resistance to CO.sub.2. Here, A and A* are different elements and are one of an alkaline earth metal element, an alkali metal element, a lanthanide element, and a post-transition metal element, B is a transition metal element, O is an oxygen element, and n is a positive (+) integer. The piezoelectric structure may be a piezoluminescence structure.

A transducer includes a first piezoelectric layer; and a second piezoelectric layer that is above the first piezoelectric layer; wherein the second piezoelectric layer is a more compressive layer with an average stress that is less than or more compressive than an average stress of the first piezoelectric layer.

Activity of piezoelectric material dimension and electrical properties can be changed with an applied stress. These variations are translated to a change in capacitance of the structure. Use of capacitance-voltage measurements for the extraction of double piezoelectric thin film material deposited at the two faces of a flexible steel sheet is described. Piezoelectric thin film materials are deposited using RF sputtering techniques. Gamry analyzer references 3000 is used to collect the capacitance-voltage measurements from both layers. A developed algorithm extracts directly the piezoelectric coefficients knowing film thickness, applied voltage, and capacitance ratio. The capacitance ratio is the ratio between the capacitances of the film when the applied field in antiparallel and parallel to the poling field direction, respectively. Piezoelectric bulk ceramic is used for calibration and validation by comparing the result with the reported values from literature. Extracted values using the current approach match well values extracted by existing methods.

The present disclosure provides a piezoelectric element, a piezoelectric vibrator, and a manufacturing method thereof, and an electronic device, and the present disclosure relates to the field of piezoelectric technologies. In the present disclosure, the piezoelectric element is provided with a first electrode and a second electrode positioned on the first electrode. The second electrode is provided with an opening where the first electrode is exposed. A piezoelectric structure is further arranged in the piezoelectric element. The piezoelectric structure includes a first piezoelectric portion and a second piezoelectric portion arranged around the first piezoelectric portion. The first piezoelectric portion is arranged in the opening and is in contact with the first electrode, the second piezoelectric portion is arranged on a side of the second electrode away from the first electrode, and the second piezoelectric portion has orientation.