Systems and techniques are provided for piezoelectric transducer array fabrication. A sheet of piezoelectric material may be diced into pieces of piezoelectric material. A sheet of elastic layer material may be spin coated with adhesive. The pieces of piezoelectric material may be placed onto the sheet of elastic layer material. Pressure may be applied to the pieces of piezoelectric material and the sheet of elastic layer material. The adhesive may be cured. Transduction elements may be cut from the pieces of piezoelectric material and the sheet of elastic layer material. Electronics may be mounted on a PCB mounting board. Adhesive may be applied onto the PCB mounting board. The transduction elements may be mounted on the PCB mounting board. A spacer may be mounted on the PCB mounting board. Adhesive may be applied onto the spacer and the transduction elements. Diaphragms may be mounted on the spacer.

A method for forming a Bulk Acoustic Wave (BAW) structure comprises forming a piezoelectric material on a first substrate; applying a first metal layer on a top surface of the piezoelectric material; forming a metal pattern on a second substrate, the metal pattern forming a cavity pattern between raised areas of the metal pattern; attaching the first metal layer to a top area of the metal pattern forming a plurality of cavity areas; removing the first substrate; and applying a second metal layer on a bottom surface of the piezoelectric material.

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

A method for manufacturing film, notably monocrystalline, on a flexible sheet, comprises the following steps: providing a donor substrate, forming an embrittlement zone in the donor substrate so as to delimit film, forming the flexible sheet by deposition over the surface of the film, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the flexible sheet.

A piezoelectric device that includes a film that has a first main surface and a second main surface, and has piezoelectricity; a first substrate; and a first connection member that connects the film to the first substrate. The first connection member is a thermosetting resin, and a curing temperature of the first connection member is lower than a temperature at which the film thermally contracts.

A method for manufacturing a film on a support having a non-flat surface comprises: providing a donor substrate having a non-flat surface, forming an embrittlement zone in the donor substrate so as to delimit the film to be transferred, forming the support by deposition on the non-flat surface of the film to be transferred, and detaching the donor substrate along the embrittlement zone, so as to transfer the film onto the support.

The present disclosure provides a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the following operations. An intermediate layer is formed in the semiconductor device. A voltage is applied to the intermediate layer. A unit cell of the intermediate layer is stretched or compressed by the voltage. The polarity of the intermediate layer is changed by the voltage.

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

A method of manufacturing an electronic device formed in a cavity may include, on a first substrate having a bottom surface and a top surface, forming a first side wall of a certain height along a periphery on the bottom surface to surround an electronic circuit disposed on the bottom surface; forming a via communicating between the bottom surface and the top surface, forming of the via including stacking a first stop layer and a second stop layer sequentially on a portion of the bottom surface of the first substrate corresponding to the via and etching the first substrate to form a through-hole corresponding to the via, a rate of etching the first substrate being greater than that of the first stop layer and a rate of etching the first stop layer being greater than that of the second stop layer; forming a second side wall of a certain height along a periphery on a top surface of the second substrate; and aligning and bonding the first side wall and the second side wall.

A vibrator includes a piezoelectric element including a piezoelectric ceramic having an electrode, a vibration plate, and an adhesive layer between the piezoelectric element and the vibration plate, wherein the adhesive layer is obtained by a resin containing 50 parts by mass or more and 80 parts by mass or less of organic particles having a number average particle size of 5 m or more and 15 m or less, relative to 100 parts by mass of the resin.