An integrated semiconductor optoelectronic component for sensing ambient light levels includes a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component. The silicon photomultiplier has an active surface area for light detection. The component also includes an optical filter covering the active surface area of the silicon photomultiplier. The optical filter is adapted to selectively transmit light onto the active surface area as a function of wavelength. The optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions. The component further includes readout electronics for processing the output signal of the silicon photomultiplier.

The present application relates to an array substrate (1) and a liquid crystal display panel. The driving array layer of the array substrate (1) includes a scanning line (G) extending along a first direction (X) and a data line (D) extending along a second direction (Y); the transparent metal layer (14) includes a first pixel electrode (141a) and a second pixel electrode (141b) which are alternately provided along a first direction (X) and a second direction (Y), and a shielding common electrode (142) located in an interval region of the first pixel electrode (141a) and the second pixel electrode (141b); the color-resistance layer (13) includes color-resistance units (131) respectively corresponding to the first pixel electrode (141a) and the second pixel electrode (141b), and in the second direction (Y), a first overlap width (W1) between two adjacent color-resistance units (131) corresponding to the target area is greater than a second overlap width (W2) between two adjacent color-resistance units (131) at the remaining positions in the target area formed by the interval between the first pixel electrode (141a) and the second pixel electrode (141b) intersecting with the scanning line (G). The array substrate can avoid electrical performance problems such as short circuits, crosstalk, etc. due to the remaining underexposed transparent metal layer.

A light-receiving device having an electromagnetic interference removal function is provided. The light-receiving device includes a waveguide-shaped structure that extends in a traveling direction of photons and high-frequency electromagnetic waves incident on a light-receiving area and that surrounds the light-receiving area, and an insulating layer configured to fix the waveguide-shaped structure.

In an embodiment an optoelectronic apparatus includes a light detector having a bottom side, an upper side and at least one sidewall that extends between the upper side and the bottom side, a carrier having an upper surface on which the light detector is arranged such that the bottom side faces the carrier, at least one outer wall which is arranged on the surface of the carrier, the outer wall and the carrier forming a cavity with an opening in which the light detector resides, a filter covering the upper side of the light detector, the filter having a first threshold wavelength separating a first wavelength region from an adjacent second wavelength region, wherein the filter has a lower transmittance for light at wavelengths in the first wavelength region than for light at wavelengths in the second wavelength region and a first material layer covering the filter.

A light detection device includes a Fabry-Perot interference filter provided with a light transmitting region on a predetermined line, a light detector disposed on one side with respect to the Fabry-Perot interference filter on the line, a package having an opening positioned on the other side with respect to the Fabry-Perot interference filter on the line, a light transmitting member provided in the package such that the opening is blocked, and a temperature control element having an endothermic region thermally connected to the Fabry-Perot interference filter and the light detector. The endothermic region is positioned on one side with respect to the light detector on the line.

A photodiode and a manufacturing method thereof are provided. The photodiode includes a substrate, a light-active area, a filter layer and a light-shielding side wall. The light-active area is disposed on the substrate. The filter layer covers the light-active area and selectively allows only light of a specific wavelength to pass through and be received by the light-active area and generate an electrical signal correspondingly. The light-shielding sidewall completely covers the sidewall of the filter layer and the sidewall of the substrate to block any light from passing through the sidewall of the filter layer and the sidewall of the substrate and being received by the light-active area.

A photodiode and a manufacturing method thereof are provided. The manufacturing method of the photodiode comprises the following steps: providing a wafer with a plurality of photodiode structures, attaching a protective film to the wafer, cutting the protective film and the wafer to form a plurality of cutting lanes on the protective film and the wafer to separate each photodiode structure, coating a light-shielding solution on the protective film so that the light-shielding solution covers each cutting lane, and curing the light-shielding solution so that a light-shielding sidewall are formed to completely cover the sidewall of each photodiode structure to block any light from penetrating the sidewall.