An active pixel sensor control circuit for a CMOS image sensor includes: a first control circuit including a transfer transistor, a reset transistor, a source follower and a select transistor, wherein the reset transistor and the source follower are coupled to a first power supply signal; and a second type control circuit including a transfer transistor, a reset transistor, a source follower and a select transistor, wherein the source follower is coupled to the first power supply signal and the reset transistor is coupled to a second power supply signal. When a transfer signal is applied to the gates of the transfer transistors and a reset signal is applied to the gates of the reset transistors, a second photodiode and a fourth photodiode are charged to the first power supply level, and a first photodiode and a third photodiode are discharged to the second power supply level.

A current-assisted photonic demodulator, including a detection portion produced based on germanium, containing at least two doped modulation regions and at least one doped collection region, surrounded by a peripheral lateral portion generating in the detection portion horizontal tensile and vertical compressive mechanical stress. The doped collection region(s) are disposed according to a vertical arrangement in relation to the doped modulation regions.

A current-assisted photonic demodulator, including a detection portion produced based on germanium, containing at least two doped modulation regions and at least one doped collection region, surrounded by a peripheral lateral portion generating in the detection portion horizontal tensile and vertical compressive mechanical stress. The doped collection region(s) are disposed according to a vertical arrangement in relation to the doped modulation regions.