Patent classifications
H01L41/06
Magnetoelectric Very Low Frequency Communication System
Compact and power efficient acoustically actuated magnetoelectric antennas for transmitting and receiving very low frequency (VLF) electromagnetic waves utilize magnetoelectric coupling in a magnetic/piezoelectric heterostructure to provide voltage control of magnetization in transmission mode and magnetic control of electric polarization in receiving mode. The magnetoelectric antennas provide a power efficiency enhanced by orders of magnitude compared to magnetically or mechanically switching the magnetization. The antennas can be used in groups or arrays and can be combined to form VLF communication systems.
POWERLESS MAGNETIC FIELD SENSING USING MAGNETOELECTRIC NANOWIRES
Embodiments of a magnetic field sensor of the present disclosure includes magnetoelectric nanowires suspended above a substrate across electrodes without substrate clamping. This results in enhanced magnetoelectric coupling by reducing substrate clamping when compared to layered thin-film architectures. Accordingly, the magnetoelectric nanowires of the magnetic field sensor generate a voltage response in the presence of a magnetic field.
ELECTRICITY GENERATOR COMPRISING A MAGNETO-ELECTRIC CONVERTER AND METHOD OF PRODUCTION
A magneto-electric converter capable of converting a variation in magnetic field into a potential difference between two electrical terminals includes a support layer comprising two electrical terminals; a stack disposed on the support layer of a first layer made from a magnetostrictive material defining the reference plane and of a second layer made from a piezoelectric material having a polarization axis in the plane defined by the second layer, parallel to the reference plane; the second layer comprising electrodes; and a means for electrical connection of the electrodes to the electrical terminals.
PIEZOELECTRIC PACKAGE-INTEGRATED CURRENT SENSING DEVICES
Embodiments of the invention include a current sensing device for sensing current in an organic substrate. The current sensing device includes a released base structure that is positioned in proximity to a cavity of the organic substrate and a piezoelectric film stack that is positioned in proximity to the released base structure. The piezoelectric film stack includes a piezoelectric material in contact with first and second electrodes. A magnetic field is applied to the current sensing device and this causes movement of the released base structure and the piezoelectric stack which induces a voltage (potential difference) between the first and second electrodes.
SENSOR
According to one embodiment, a sensor includes a film portion, and a first sensor portion. The film portion includes a first film including a plurality of holes. The film portion is deformable. The first sensor portion is fixed to a portion of the film portion. The first sensor portion includes a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first film and the first magnetic layer. The first intermediate layer is provided between the first magnetic layer and the second magnetic layer. A direction from at least a portion of the plurality of holes toward the first sensor portion is aligned with a first direction. The first direction is from the first film toward the first sensor portion.
RECHARGEABLE BATTERY DEVICE
A compact magnetic-based battery device that offers energy, a large number of cycles, a long storage time, and a short charging time is provided. The rechargeable battery device can include a first magnetic layer, a second magnetic layer, a dielectric layer disposed between the first magnetic layer and the second magnetic layer, and a plurality of high anisotropic magnetic nanoparticles embedded into the dielectric layer.
Instantly rechargeable battery device
A compact magnetic-based battery device that offers energy, a large number of cycles, a long storage time, and a short charging time is provided. The rechargeable battery device can include a first magnetic layer, a second magnetic layer, a dielectric layer disposed between the first magnetic layer and the second magnetic layer, and a plurality of high anisotropic magnetic nanoparticles embedded into the dielectric layer.
Magnetostrictive power supply for bottom hole assembly with rotation-resistant housing
A power supply includes a rotor having an undulated surface (658, 858, 958, 10, 58) and a magnetostrictive material disposed adjacent to the undulated surface. The undulated surface alternatingly compresses the magnetostrictive material as the rotor rotates, inducing an electric current in a conductor coupled to the magnetostrictive material.
Actuating drive and method for cooling a solid body actuator housed in an actuating drive with an actuating element
The invention is an actuating drive for deflecting an actuating element using a solid body actuator (2) when an electrical voltage or an alternating magnetic field is applied, to cause a change in length. A housing (1) encloses the solid body actuator to define an interspace (13) in a fluid-tight manner. Furthermore, the solid body actuator includes a hollow duct (6) having one end connected to a first hollow conduit (20) passing through the housing and the other end opening into the interspace (13). The interspace is additionally connected in a fluid-tight manner to a second hollow conduit (21) passing through the housing.
Magnetic storage device
According to an embodiment, a magnetic storage device includes a semiconductor region including a trench; a gate electrode disposed in the trench; an insulation film covering the gate electrode and provided in a manner to fill the trench; and a magnetoresistive effect element including at least a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, the non-magnetic layer in a side surface of the magnetoresistive effect element including the non-magnetic layer being provided on a top surface of the insulation film.