A quantum information processing device including a semiconductor substrate. An optical resonator is coupled to the substrate. The optical resonator supports a first photonic mode with a first resonator frequency. The quantum information processing device includes a non-gaseous chalcogen donor atom disposed within the semiconductor substrate and optically coupled to the optical resonator. The donor atom has a transition frequency in resonance with the resonator frequency. Also disclosed herein are systems, devices, articles and methods with practical application in quantum information processing including or associated with one or more deep impurities in a silicon substrate optically coupled to an optical structure.

A semiconductor device includes a substrate; a plurality of gate stacks situated horizontally following one another on the substrate, each gate stack including a layer of a dielectric material in contact with the substrate and a layer of a conductive material on the layer of dielectric material; a source and a drain situated on the substrate on either side of the plurality of gate stacks; a plurality of first spacers made of a first dielectric material, called secondary spacers, having a first width, called width of the secondary spacers, the source and the drain being separated from the closest gate stack by a secondary spacer; at least one main spacer made of a second dielectric material, a main spacer being situated between each gate stack, the width of the main spacer(s) being greater than the width of the secondary spacers.

The present disclosure provides a quantum processing device comprising: one or more functional nanowires, each functional nanowire connected to at least one of a source and a drain; a sensing nanowire spaced from the one or more functional nanowires and connected to at least one of a source and a drain; one or more gate electrodes capacitively coupled with each of the one or more functional nanowires; one or more electrodes capacitively coupled with the sensing nanowire; and a floating coupler positioned between and electrostatically coupling the one or more functional nanowires and the sensing nanowire; and a controller connected to the one or more gates of the sensing nanowire and the one or more gates of the one or more functional nanowires.

A quantum device formed from a substrate, the substrate being covered with a semiconductor region forming a quantum dot, and a detection structure with a Coulomb blockade for detecting a state of charge of the quantum dot, the detection structure with the Coulomb blockade including a detection island disposed above and facing the quantum dot and coupled to the quantum dot by electrostatic coupling, the detection structure further including a first tunnel junction between the detection island and a first gate block, the first gate block being juxtaposed with the detection island.

A quantum device is described that includes a substrate with a layered structure, e.g. heterostructure, forming a quantum well layer. A doped region is connected to the layered structure for exchanging charge carriers with the quantum well layer. A patterned layer of electrically conductive material forms a set of gates including an accumulation gate. The accumulation gate comprises an accumulation pad configured to accumulate a two-dimensional charge carrier gas (2DCCG) in an active region of the quantum well layer connected there below to the doped region. At least part of an electric pathway between the accumulation pad and a connection pad is narrowed to form a nanoscale constriction for cutting off the active region of the quantum well layer.

There is provided a method for performing one or more quantum operations on a quantum processor. Wherein the quantum processor comprises a plurality of quantum dots in a semiconductor substrate and at least a subset of the quantum dots being multi-dopant quantum dots. Further each multi-dopant quantum dot comprises two or more dopant atoms and at least one of the plurality of quantum dots confining an unpaired electron/hole. The method comprises performing the one or more quantum operations on the quantum processor using one or more operation modes including: using the spin of the unpaired electron/hole of a quantum dot as a data qubit; using a multi-dopant quantum dot as an error corrected logical qubit; using at least one nuclear spin of a dopant atom of a multi-dopant quantum dot as a data qubit; or using the spin of the unpaired electron/hole and at least one nuclear spin of a dopant atom of a multi-dopant quantum dot as data qubits.

An electronic device including: a semiconductor nanowire; at least two separate first control gates, arranged next to each other on the side of a first lateral surface of the nanowire, and configured to each control the electrostatic potential of a quantum dot intended to be formed in the nanowire; at least one second control gate arranged on the side of a second lateral surface, opposite to the first lateral surface, of the nanowire, and configured to control the electrostatic potential of a coupling region intended to be formed between two quantum dots; wherein all the first control gates are arranged on the side of the first lateral surface only, and the or all the second control gates are arranged on the side of the second lateral surface only.