A thin-film piezoelectric material substrate includes an insulator on Si substrate and a thin-film laminated part. The insulator on Si substrate has a substrate for deposition made of silicon and an insulating layer formed on a surface of the substrate for deposition. The thin-film laminated part is formed on a top surface of the insulating layer. The thin-film laminated part has a YZ seed layer including yttrium and zirconium, and formed on the top surface; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film made of lead zirconate titanate, shown by general formula Pb(Zr.sub.xTi.sub.(1-x))O.sub.3, and formed on the lower electrode film; and an upper electrode film laminated on the piezoelectric material film.

A piezoelectric element 10 includes a lower electrode, constituted of a Pt/Ti laminated film, a PLT seed layer, formed on the lower electrode, a PZT piezoelectric film, formed on the PLT seed layer, and an upper electrode, formed on the PZT piezoelectric film. A curve Q1 is a curve drawn such as to pass through a plurality of plotted points, each expressing a PLT (100) peak intensity with respect to a Pt (111) peak intensity according to a substrate setting temperature during forming of the Pt/Ti laminated film. A relationship of the PLT (100) peak intensity with respect to the Pt (111) peak intensity is within a range in the curve Q1 until the PLT (100) peak intensity decreases by 5% from a peak point P, at which the PLT (100) peak intensity is the maximum, and a (100) orientation rate of PLT constituting the seed layer is not less than 85%.

Pulsed DC reactive sputtering of a target deposits an additive-containing aluminium nitride film onto a metallic layer of a semiconductor substrate. The additive-containing aluminium nitride film contains an additive element selected from scandium, yttrium, titanium, chromium, magnesium and hafnium. Depositing the additive-containing aluminium nitride film includes introducing a gaseous mixture comprising nitrogen gas and an inert gas into the chamber at a flow rate, in which the flow rate of the gaseous mixture comprises a nitrogen gas flow rate, and in which the nitrogen gas flow rate is less than or equal to about 50% of the flow rate of the gaseous mixture and also is sufficient to fully poison the target.

A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by M.sub.dN.sub.1−dO.sub.e, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X−1.05≤d≤A1.Math.exp(−X/t1)+y0, where A1=1.68×10.sup.12, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pb.sub.a1α.sub.a2)(Zr.sub.b1Ti.sub.b2β.sub.b3)O.sub.c, where 0.5<a1/(b1+b2+b3)<1.07.

The present invention relates to a method of preparing a shape-reconfigurable micropatterned polymer haptic material using an electric field technique, and more particularly, to a method of preparing a shape-reconfigurable micro-patterned polymer thin film and a haptic material by controlling the orientation of a liquid-crystalline organic polymer using an electric field control system and inducing the generation of defect structures having a regular microstructure array in a polymer film.

A method of manufacturing a monocrystalline layer comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO.sub.3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A′B′O.sub.3 on piezoelectric material ABO.sub.3 of the seed layer, where A′ consists of a least one of the following elements Li, Na, K, H; B′ consists of a least one of the following elements Nb, Ta, Sb, V; and A′ is different from A or B′ is different from B.

A physical disturbance sensor includes a plurality of piezoresistive elements configured in a resistive bridge configuration. A signal transmitter is electrically connected to the physical disturbance sensor and configured to send an encoded signal to the piezoresistive elements of the resistive bridge configuration. A signal receiver is electrically connected to the piezoresistive elements and configured to receive a signal from the physical disturbance sensor. The received signal from the physical disturbance sensor is correlated with the sent encoded signal in determining a measure of physical disturbance.

Provided is a method of manufacturing a MEMS device including forming, in a metal layer, an opening that enables a first space and a second space to communicate with each other by exposing the metal layer to an etching solution in a state where the metal layer is left at a boundary between the first space and the second space, and covering an inner surface of an opening of each of an adhesive layer and the metal layer by forming a protective layer from an inner surface of the first space to an inner surface of the second space after the opening of the metal layer is formed.

A method of manufacturing a monocrystalline layer, comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO.sub.3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the “seed layer” from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A′B′O.sub.3 on piezoelectric material ABO.sub.3 of the seed layer where A′ consists of a least one of the following elements Li, Na, K, H; B′ consists of a least one of the following elements Nb, Ta, Sb, V; and A′ is different from A or B′ is different from B.

A seed layer (210) of a noble metal is formed by electrochemical deposition on a metal electrode (111) disposed on a dielectric layer (110,310). The noble metal seed layer allows the deposition of a highly textured piezoelectric layer (320) on the metal electrode.