A method for forming an aluminum nitride layer (310, 320) comprises the provision of a substrate (100) and the forming of a patterned metal nitride layer (110). A bottom electrode metal layer (210) is formed on the exposed portions (101) of the substrate. An aluminum nitride layer portion (320) grown above the exposed portion (101) of the substrate (100) exhibits piezoelectric properties. An aluminum nitride layer portion (310) grown above the patterned metal nitride layer (110) exhibits no piezoelectric properties (310). Both aluminum nitride layer portions (320, 310) are grown simultaneously.

A multi-layered piezoelectric ceramic-containing structure There is provided a multi-layered piezoelectric ceramic-containing structure comprising: a metal substrate; a metallic adhesive layer on a surface of the metal substrate; a non-metallic thermal barrier layer on the metallic adhesive layer; and a piezoelectric ceramic layer sandwiched between a first electrode layer and a second electrode layer, wherein the first electrode layer is on the non-metallic thermal barrier layer. There is also provided a method of forming the structure.

A piezoelectric device has a layered structure in which at least a first electrode, a plastic layer, an orientation control layer, a piezoelectric layer, and a second electrode are stacked, wherein the orientation control layer is amorphous, and the piezoelectric layer with a thickness of 20 nm to 250 nm is provided over the orientation control layer, the piezoelectric layer having a wurtzite crystal structure, and wherein the orientation control layer and the piezoelectric layer are provided between the first electrode and the second electrode.

A film structure includes a substrate (11) which is a silicon substrate including an upper surface (11a) composed of a (100) plane, an alignment film (12) which is formed on the upper surface (11a) and includes a zirconium oxide film which has a cubic crystal structure and is (100)-oriented, and a conductive film (13) which is formed on the alignment film (12) and includes a platinum film which has a cubic crystal structure and is (100)-oriented. An average interface roughness of an interface (IF1) between the alignment film (12) and the conductive film (13) is greater than an average interface roughness of an interface (IF2) between the substrate (11) and the alignment film (12).

A sensor device includes a sensor, which may include an acoustic wave resonator structure, having a surface to which analyte capture ligand is bound. The device also includes a crowding agent to reduce the rate of binding of an analyte in a sample composition to the analyte capture ligand when the sample composition is flowed across the surface of the sensor.

The present disclosure provides a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the following operations. An intermediate layer is formed in the semiconductor device. A voltage is applied to the intermediate layer. A unit cell of the intermediate layer is stretched or compressed by the voltage. The polarity of the intermediate layer is changed by the voltage.

A piezoelectric resonator device having a sandwich structure is provided, which is stably bonded to an external element. In the piezoelectric resonator device 1, at least a vibrating part 21 of a piezoelectric substrate 2 is sealed by a first sealing member 3 and a second sealing member 4. The piezoelectric substrate 2 includes: the vibrating part 21; and an external frame part 23 that is thicker than the vibrating part 21 and that surrounds the outer periphery of the vibrating part 21. External electrodes 31 to be connected to an external element 5 are provided on at least one of the first sealing member 3 and the second sealing member 4. The external element 5 is connected to the external electrodes 31 at least on the external frame part 23 of the piezoelectric substrate 2.

Provided are a structure including: a substrate; a first layer provided on the substrate; a second layer provided on the first layer; and a third layer provided on the second layer, in which the first layer is a layer containing a compound represented by a chemical formula MIn.sub.2O.sub.4 using M as a metal element, the second layer is a metal layer having a face-centered cubic structure, and the third layer is a ferroelectric film, and a sensor using the structure.

The present invention provides a thin film structural body comprising a sapphire substrate having a principal plane of a {11-26} plane and a first epitaxial thin film which is grown directly on the principal plane of the sapphire substrate and has a principal plane of a {100} plane. As one example, in a fabrication method of the thin film structural body, a first epitaxial thin film is grown on a principal plane of a {11-26} plane of the sapphire substrate. The grown first epitaxial thin film has a principal plane of a {100} plane.

The present invention relates to a piezoelectric nanogenerator (PENG) that is capable of harvesting mechanical energy into electricity. The PENG comprises one dimensional (1D) and two dimensional (2D) nanostructures integrated together to form a composite nanostructure. A major advantage of the present invention is that the composite nanostructure provides enhanced electrical output and enhanced mechanical stability as compared to previously reported 1D or 2D nanostructures alone. Also described is a hybrid nanogenerator that combines the PENG with a triboelectric nanogenerator (TENG). A method of synthesizing the composite nanostructure PENG, in which the 1D and 2D nanostructures are grown together on the same substrate using a low temperature hydrothermal method is also described. The provided method is simple and cost-effective.