Provided is a piezoelectric element including: a first electrode; a piezoelectric layer which is provided over the first electrode; and a second electrode provided on a side of the piezoelectric layer opposite to the first electrode, in which the second electrode includes a first layer which is provided on the piezoelectric layer side, and a second layer which is provided on a side of the first layer opposite to the piezoelectric layer, and the second layer does not contain platinum and covers an end portion of the first layer.

A method of fabricating a monocrystalline piezoelectric layer, wherein the method comprises: supplying a donor substrate of the piezoelectric material, supplying a receiving substrate, transferring a layer called a seed layer from the donor substrate onto the receiving substrate, and implementing an epitaxy of the piezoelectric material on the seed layer until a required thickness for the monocrystalline piezoelectric layer is obtained.

A method of manufacturing a monocrystalline layer comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO.sub.3, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the seed layer from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition ABO.sub.3 on piezoelectric material ABO.sub.3 of the seed layer where A consists of a least one of the following elements Li, Na, K, H; B consists of a least one of the following elements Nb, Ta, Sb, V; and A is different from A or B is different from B.

The present invention provides a thin film structural body comprising a sapphire substrate having a principal plane of a {11-26} plane and a first epitaxial thin film which is grown directly on the principal plane of the sapphire substrate and has a principal plane of a {100} plane. As one example, in a fabrication method of the thin film structural body, a first epitaxial thin film is grown on a principal plane of a {11-26} plane of the sapphire substrate. The grown first epitaxial thin film has a principal plane of a {100} plane.

The present disclosure is drawn to a thin film stack including a substrate, a metal layer, and an adhesive layer. The adhesive layer comprises a blend of zinc oxide and tin oxide, and the adhesive layer is adhered between the substrate and the metal layer.

A manufacturing method of a piezoelectric element includes forming an adhesive layer of a lead electrode on a piezoelectric element main body of a vibration plate, forming a metallic layer of the lead electrode on the adhesive layer, removing the metallic layer to leave the adhesive layer in a portion that corresponds to an extended electrode of the lead electrode using etching, patterning the remaining adhesive layer as individual extended electrodes that correspond to the piezoelectric element main body using etching, joining a protective substrate onto the vibration plate in a state in which the piezoelectric element main body is accommodated inside an accommodation hollow section and the extended electrode is positioned further on an outer side of the vibration plate than the protective substrate, layering and forming a section of the wiring on the protective substrate and the extended electrode, and patterning the wiring as individual wiring for each extended electrode using etching.

A method for manufacturing a crystal film including: forming a Zr film on a substrate heated to 700? C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal; forming a ZrO.sub.2 film on said Zr film on a substrate heated to 700? C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and forming a Y.sub.2O.sub.3 film on said ZrO.sub.2 film on a substrate heated to 700? C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.

An aspect of the present invention relates to ferroelectric ceramics including a stacked film formed on a Si substrate, a Pt film formed on the stacked film, a SrTiO.sub.3 film formed on the Pt film, and a PZT film formed on the SrTiO.sub.3, wherein the stacked film is formed by repeating sequentially N times a first ZrO.sub.2 film and a Y.sub.2O.sub.3 film, and a second ZrO.sub.2 film is formed on the film formed repeatedly N times, the N being an integer of 1 or more. It is preferable that a ratio of Y/(Zr+Y) of the stacked film is 30% or less.

Provided is a piezoelectric device including: a substrate (10) on which a plurality of recesses (12) are provided; a vibrating plate (50) which is provided on one surface side of the substrate; and a piezoelectric element (300) which is provided over the vibrating plate (50) and on which a first electrode (60), a piezoelectric layer (70), and a second electrode (80) are laminated from the substrate (10) side, in which the first electrode (60) is formed to have a first width which is smaller than a dimension of the recess in a parallel arrangement direction in the parallel arrangement direction of at least one recess (12), and the piezoelectric layer (70) is extended to the outer side of the first electrode (60) in the parallel arrangement direction and has a second width which is greater than the first width and smaller than a width of the recess (12) in the parallel arrangement direction, the vibrating plate (50) contains a zirconium oxide layer (52), and when an area of the zirconium oxide layer (52) corresponding to the first electrode having the first width is set as a first area (p), areas of the zirconium oxide layer (52) corresponding to areas where the piezoelectric layer (70) is provided on the outer side of the first area (p) in the parallel arrangement direction are set as second areas (q), and areas of the zirconium oxide layer (52) corresponding to the recess (12) on the outer side of the second areas (q) in the parallel arrangement direction are set as third areas (r), the zirconium oxide layer (52) contains particulate crystal in the first area (p) at least on the first electrode (60) side in the thickness direction and contains columnar crystal in the third areas (r).

There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production.

A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.