There is provided a wafer processing method for dividing a wafer having a plurality of devices formed in regions partitioned by a plurality of crossing division lines on a front surface of a substrate having a birefringent crystal structure, into individual device chips. The wafer processing method includes a detection step of detecting the division line formed on the front surface of the wafer by an imaging unit from the back side of the wafer. In the detection step, a polarizer disposed on an optical axis connecting an imaging element and an image forming lens provided in the imaging unit intercepts extraordinary light appearing due to birefringence in the substrate and guides ordinary light to the imaging element.

A method for manufacturing a plurality of fingerprint identification modules simultaneously is provided. A first thin film and a second thin film are formed on a first transfer base and a second transfer base respectively. The first thin film and the second thin film are cut respectively to form a plurality of first thin film units and a plurality of second thin film units. The first transfer base and the second transfer base are adhered on opposite surfaces of a substrate. The first thin film units and the second thin film units are cut respectively to form a plurality of the first piezoelectric layers and a plurality of the second piezoelectric layers. A plurality of first slits and a plurality of second slits are formed on opposite surfaces of the substrate for breaking the mother base into the fingerprint identification modules.

Disclosed are systems, devices and methods for providing fingerprint sensors based on ultrasound imaging techniques in electronic devices and fabrication techniques for producing ultrasound-based fingerprint sensors. In some aspects, an ultrasound fingerprint sensor device includes an intermediate layer coupled to a base chip including an integrated circuit having conducive contacts at a surface of the base chip, the intermediate layer including an insulation layer formed on the base chip and a corresponding array of channeling electrode structures coupled to the conductive contacts and passing through the insulation layer, in which the channeling electrodes terminate at or above a top surface of the insulation layer to provide bottom electrodes; a plurality of ultrasonic transducer elements including an acoustic transducer material coupled to the bottom electrodes; and a plurality of top electrodes positioned on the ultrasonic transducer elements.

An elastic wave device includes IDT electrodes on a first main surface of a piezoelectric substrate and a heat dissipating film on a second main surface and including a pair of opposing main surfaces and side surfaces connecting the pair of main surfaces. At least a portion of the side surfaces of the heat dissipating film is located in an inner side portion relative to the outer circumference of the second main surface of the piezoelectric substrate on an arbitrary cross section along a direction connecting the pair of main surfaces of the heat dissipating film.

According to one embodiment, a liquid discharge head includes a flexible printed circuit (FPC) connected to piezoelectric elements. The FPC has a first end in the first direction. A wiring layer of the FPC has a first region at the first end and a cover layer covering on a second region. The piezoelectric elements are spaced from each other in a second direction and each has a first electrode on a side surface facing towards the FPC. The first side has a joint surface facing the first region of the wiring layer. The first electrode is electrically connected to the wiring layer at the joint surface. The side surface includes a step portion that is recessed from the joint surface. A portion of the cover layer protrudes into a space adjacent to the step portion.

The present application relates to a method for producing ceramic multi-layer components (100), comprising the following steps: providing green layers (5) for the ceramic multi-layer components (100), stacking the green layers (5) into a stack and subsequently pressing the stack into a block (1), singulating the block (1) into partial blocks (3) each having a longitudinal direction (X), thermally treating the partial blocks (3) and subsequently machining surfaces of the partial blocks (3), wherein recesses (11) are produced on the surfaces of the partial blocks (3) during the machining, and singulating the partial blocks (3). The application further relates to a multi-layer component.

Aspects of this disclosure relate to bulk acoustic wave components. A bulk acoustic wave component can include a substrate, at least one bulk acoustic wave resonator on the substrate, and a cap enclosing the at least one bulk acoustic wave resonator. The cap can include a sidewall spaced apart from an edge of the substrate. The sidewall can be 5 microns or less from the edge of the substrate.

A composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90° C. or higher at which cracking is not caused; and exposing the heat-treated laminate to visible light to split along the ion-implanted layer to obtain the composite wafer.

A multi-layer piezoelectric ceramic component includes: a piezoelectric ceramic body having a cuboid shape having upper and lower surfaces facing in a thickness direction, first and second end surfaces facing in a length direction, and a pair of side surfaces facing in a width direction; first internal electrodes formed in the piezoelectric ceramic body and drawn to the first end surface; second internal electrodes formed in the piezoelectric ceramic body and drawn to the second end surface; a first terminal electrode formed on the first end surface; and a second terminal electrode formed on the second end surface, the first and second internal electrodes each having a width equal to a distance between the pair of side surfaces, at least one of the pair of side surfaces including a groove extending in non-parallel with the length direction.

A method of manufacturing a piezoelectric microactuator having a wrap-around electrode includes forming a piezoelectric element having a large central electrode on a top face, and having a wrap-around electrode that includes the bottom face, two opposing ends of the device, and two opposing end portions of the top face. The device is then cut through the middle, separating the device into two separate piezoelectric microactuators each having a wrap-around electrode.