Various methods and systems are provided for a multi-frequency transducer array. In one example, the transducer array may be fabricated via a wafer scale approach, where a first comb structure, with a first type of element, is formed by dicing a first acoustic stack and a second comb structure, with a second type of element, is formed by dicing a second acoustic stack. Combining the first and second comb structures may form a multi-frequency transducer array.

The present disclosure provides methods to integrate piezoelectric micromachined ultrasonic transducer (pMUT) arrays with an application-specific integrated circuit (ASIC) using thermocompression or eutectic/solder bonding. In an aspect, the present disclosure provides a device comprising a first substrate and a second substrate, the first substrate comprising a pMUT array and the second substrate comprising an electrical circuit, wherein the first substrate and the second substrate are bonded together using thermocompression, wherein any set of individual PMUTs of PMUT array is addressable. In another aspect, the present disclosure provides a device comprising a first substrate and a second substrate, the first substrate comprising a pMUT array and the second substrate comprising an electrical circuit, wherein the first substrate and the second substrate are bonded together using eutectic or solder bonding, wherein any set of individual PMUTs of the PMUT array is addressable.

Flex circuits and methods for ultrasound transducers are provided herein. In at least one embodiment, an ultrasound device includes a plurality of transducer elements and a flex circuit. The flex circuit includes an insulating layer having a first surface and a second surface opposite the first surface. A plurality of first conductive pads is included on the first surface of the insulating layer, and each of the first conductive pads is electrically coupled to a respective transducer element. A plurality of second conductive pads are included on the second surface of the insulating layer, and each of the second conductive pads is electrically coupled to a respective first conductive pad and the respective transducer element.

A microwave dielectric component (100) comprises a microwave dielectric substrate (101) and a metal layer, the metal layer being bonded to a surface of the microwave dielectric substrate (101). The metal layer comprises a conductive seed layer and a metal thickening layer (105). The conductive seed layer comprises an ion implantation layer (103) implanted into the surface of the microwave dielectric substrate (101) and a plasma deposition layer (104) adhered on the ion implantation layer (103). The metal thickening layer (105) is adhered on the plasma deposition layer (104). A manufacturing method of the microwave dielectric component (100) is further disclosed.

The structure of a mother piezoelectric element allows a polarization process to be performed on the mother body before the individual piezoelectric elements are cut from the mother piezoelectric element. The mother piezoelectric element includes a plurality of first internal electrodes which are provided on at least one first surface and a plurality of second internal electrodes which are provided on at least one second surface. Each of the first and second internal electrodes is led out to any of first to fourth side surfaces of a mother piezoelectric body. The plurality of first internal electrodes are electrically connected to each other on a first surface and the plurality of second internal electrodes are electrical connected to each other on a second surface. All the first internal electrodes in the mother piezoelectric body are electrically connected to each other, and all the second internal electrodes in the mother piezoelectric body are electrically connected to each other.

An electronic device, such as a filter, includes a first substrate having a bottom surface and a top surface, a first side wall of a certain height being formed along a periphery of the bottom surface to surround an electronic circuit disposed on the bottom surface, an external electrode formed on the top surface, the external electrode being connected to the electronic circuit by a via communicating with the bottom surface and a second substrate. The second substrate has a second side wall of a certain height formed along a periphery of a top surface, the second side wall being aligned and bonded with the first side wall to internally form a cavity defined between the bottom surface of the first substrate, the top surface of the second substrate, the first side wall, and the second side wall.

The present disclosure provides methods to integrate piezoelectric micromachined ultrasonic transducer (pMUT) arrays with an application-specific integrated circuit (ASIC) using thermocompression or eutectic/solder bonding. In an aspect, the present disclosure provides a device comprising a first substrate and a second substrate, the first substrate comprising a pMUT array and the second substrate comprising an electrical circuit, wherein the first substrate and the second substrate are bonded together using thermocompression, wherein any set of individual PMUTs of PMUT array is addressable. In another aspect, the present disclosure provides a device comprising a first substrate and a second substrate, the first substrate comprising a pMUT array and the second substrate comprising an electrical circuit, wherein the first substrate and the second substrate are bonded together using eutectic or solder bonding, wherein any set of individual PMUTs of the PMUT array is addressable.

The present disclosure provides methods to integrate pMUT arrays with an ASIC using solid liquid interdiffusion (SLID). In an aspect, the present disclosure provides a device comprising a first substrate and a second substrate, the first substrate comprising a pMUT device and the second substrate comprising an electrical circuit, wherein the first substrate and the second substrate are bonded together using a conductive bonding pillar, which conductive bonding pillar comprises one or more intermetallic compounds. In another aspect, the present disclosure provides a device comprising a first substrate and a second substrate, the first substrate comprising a pMUT device and the second substrate comprising an electrical circuit, wherein the first substrate and the second substrate are bonded together using a conductive bonding pillar, wherein the bonding is performed at a temperature less than the melting point of the conductive bonding pillar after the bonding.

A sleep monitor includes a layered sensor that includes at least one substrate layer that includes multiple laterally adjacent substrates. The substrate layer may be formed by interdigitating fingers of a first sheet with fingers of a second sheet. Combining multiple substrates in a single layer of a layered sensor may allow multiple materials and/or sensing mechanisms to be combined together in a single layer.

A processing device forms, in an object to be processed, a modified spot constituting a modified region. The processing device includes a first irradiation unit configured to irradiate the object with first light to temporarily increase absorptivity in a partial region of the object as compared with the absorptivity before irradiation of the first light, and a second irradiation unit configured to irradiate the partial region with second light in an absorptivity increase period in which the absorptivity of the partial region is temporarily increased.