To provide a resonant tunneling diode and a terahertz oscillator capable of further performance improvement. The resonant tunneling diode includes: a multi-quantum well structure that is composed of a group-III nitride semiconductor; a first electrode that is connected to one of sides of the multi-quantum well structure; and a second electrode that is connected to the other side of the multi-quantum well structure. The multi-quantum well structure includes a first barrier layer, a first quantum well layer, a second barrier layer, a second quantum well layer, and a third barrier layer, which are arranged in order from the first electrode toward the second electrode. The first barrier layer, the second barrier layer, and the third barrier layer have a thickness through which a carrier can pass by a tunneling effect. The first quantum well layer and the second quantum well layer each have a potential gradient by spontaneous polarization or a sum of spontaneous polarization and piezoelectric polarization, and have mutually different thicknesses. The first quantum well layer and the second quantum well layer have compositions with different magnitudes of potential energy.

A semiconductor device includes a plurality of tunnel diodes, each of which includes a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type that is provided above the first semiconductor region, the second semiconductor region being a nanowire shape; an insulating film provided around a side surface of the second semiconductor region; a plurality of first electrodes, each coupled to the first semiconductor region; and a plurality of second electrodes, each coupled to the second semiconductor region, wherein the second electrode has a first surface that faces the side surface of the second semiconductor region across the insulating film, and a diameter of a second semiconductor region of a first tunnel diode of the plurality of tunnel diodes is different from a diameter of a second semiconductor region of a second tunnel diode.

A semiconductor device includes a plurality of tunnel diodes, each of which includes a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type that is provided above the first semiconductor region, the second semiconductor region being a nanowire shape; an insulating film provided around a side surface of the second semiconductor region; a plurality of first electrodes, each coupled to the first semiconductor region; and a plurality of second electrodes, each coupled to the second semiconductor region, wherein the second electrode has a first surface that faces the side surface of the second semiconductor region across the insulating film, and a diameter of a second semiconductor region of a first tunnel diode of the plurality of tunnel diodes is different from a diameter of a second semiconductor region of a second tunnel diode.

One or more systems, devices and/or methods provided herein relate to a device that can facilitate generation of a pulse to affect a qubit and to a method that can facilitate fabrication of a semiconductor device. The semiconductor device can comprise an RTD and an FET co-integrated in a common layer extending along a substrate. A method for fabricating the semiconductor device can comprise applying, at a substrate layer, a template structure comprising an opening, a cavity and a seed structure comprising a seed material and a seed surface, and sequentially growing along the substrate a plurality of diode layers of an RTD and a plurality of transistor layers of an FET within the cavity of the template structure from the seed surface, wherein the RTD and FET are co-integrated along the substrate.

The present disclosure provides a resonant tunneling diode including: a first barrier layer; a second barrier layer; a potential well layer between the first barrier layer and the second barrier layer, materials of the first barrier layer, the second barrier layer, and the potential well layer including a group III nitride, a material of the potential well layer including a gallium element; a first barrier layer between the first barrier layer and the potential well layer; and/or a second barrier layer between the second barrier layer and the potential well layer.