A display device is disclosed that includes a display panel including a light emitting diode, a window layer disposed on the display panel, a light blocking member including a first light blocking part disposed between the display panel and the window layer and a second light blocking part disposed between the display panel and the first light blocking part and partially covering a lower surface of the first light blocking part and a dam disposed between the light blocking member and the display panel.

The present invention relates to a vertically stacked LEDoS micro display panel and a manufacturing method therefor, in which an engineering monolithic epitaxy wafer is used when bonding a front wafer and a back wafer to each other, thus making a process for aligning an LED laminate with a CMOS electrode pad unnecessary, and at the same time, each LED laminate emits only light of a specific color, thus making a color filter unnecessary.

A display device includes a plurality of LED elements mounted on a substrate, a first resin layer that seals the LED elements, a first light shielding layer arranged on the first resin layer, a second resin layer arranged on the first light shielding layer, and a second light shielding layer arranged on the second resin layer. The first light shielding layer includes a plurality of first light shielding portions and a plurality of first openings. The second light shielding layer includes a plurality of second light shielding portions and a plurality of second openings. Each of the first light shielding portions and the second light shielding portions includes a third opening. Each of the first light shielding portions is arranged at a position overlapping with any of the second openings. Each of the second light shielding portions is arranged at a position overlapping with any of the first openings.

A display panel is disclosed. The display panel comprises: a substrate divided into a plurality of pixel areas; a plurality of main light-emitting elements and an auxiliary light-emitting element mounted in each of the plurality of pixel areas; and a color conversion layer stacked on the plurality of main light-emitting elements and the auxiliary light-emitting element, wherein the color conversion layer is configured such that light emitted from the auxiliary light-emitting element passes through the color conversion layer and, as a result, has a first color corresponding to a defective first main light-emitting element among the plurality of main light-emitting elements.

Disclosed is a light emitting display device and a light emitting display panel. The light emitting display device includes a first column spacer and a second column spacer disposed on a bank layer. The first column spacer has a different shape form the second column spacer, and at least one of the first column spacer and the second column spacer includes a light-shielding material. The column spacer with the light-shielding material is disposed apart from a reflective electrode of a light emitting diode so that a metal component in the reflective electrode is not reacted with a component with the light-shielding material in the column spacer. Light reflected from metal electrodes and external light is blocked by the column spacer so that the light emitting display device with beneficial luminous efficiency is realized.

Provided is a display apparatus. The display apparatus includes a substrate including a display area and a non-display area including a first area, a connection wiring on the substrate in the first area, a reinforcing member on the connection wiring in the first area and a blocking layer between the connection wiring and the reinforcing member in the first area.

A display apparatus including a panel, a substrate disposed on the panel and having a first surface and a second surface opposing each other, a light shielding layer disposed on the second surface of the substrate, a plurality of nitride semiconductor layers directly disposed on the first surface of the substrate and defining a light emitting area, and a plurality of pads disposed on the nitride semiconductor layers, in which the light shielding layer has a thickness greater than a length of the longest wavelength among wavelengths of light generated from the light emitting area, and an upper surface of the light shielding layer has a concaved surface.

A lighting-board packaging structure includes a circuit substrate, an LED chip, a diffuser structure, a black light-transmissive layer, a haze layer, and an anti-reflection layer. The LED chip is disposed on the circuit substrate by a chip-on-board process and emits a color light. The diffuser structure has two types of scattering particles doped therein and covers the LED chip for homogenizing and diffusing the color light. A doping concentration of each of the two types of scattering particles in the diffuser structure is not greater than 10%. The black light-transmitting layer is stacked on the diffuser structure to reduce reflection of an ambient light incident to the lighting-board packaging structure. The haze layer is stacked on the black light-transmissive layer for scattering the ambient light. The anti-reflection layer is stacked on the haze layer for allowing the ambient light to enter.

A display device includes a first substrate, a light emitting unit disposed on the first substrate and electrically connected to the first substrate, a light converting layer disposed on the light emitting unit, a color filter layer disposed on the light converting layer, a microlens layer disposed on the color filter layer, and a second substrate disposed on the microlens layer. The microlens layer includes a plurality of microlens units, and in a normal direction of the display device, the plurality of microlens units overlap the color filter layer.

A light-emitting array includes a semiconductor LED structure, multiple outcoupling structures, multiple independent first electrical contacts, and second electrical contact(s). The LED structure extends contiguously over the array. The second electrical contacts are in electrical contact with the second semiconductor layer. Each outcoupling structure is a protruding portion of the second semiconductor layer. Each first electrical contact includes a circumscribed electrode layer opposite a corresponding outcoupling structure. Each outcoupling structure and corresponding first electrical contact define a corresponding discrete, circumscribed pixel region within the contiguous area of the array, each pixel region separate from the others. Some light emitted in the pixel region is collected or redirected by the outcoupling structure to exit the outcoupling structure and propagate away from the array.