An ultra-small LED chip rework apparatus using a transfer technique according to the present invention is characterized by including a detach press head in a stick-shaped configuration with a second adhesive layer stronger than a first adhesive layer at the lower end and capable of transferring a defective ultra-small LED chip attached to the first adhesive layer to the second adhesive layer by applying pressure to the upper surface of the defective ultra-small LED chip, and a driving unit that moves the detach press head on the substrate in the X, Y, and Z-axis directions.

A light-emitting element transfer stamp can include a stamp substrate, an elastic part disposed on the stamp substrate, a pickup portion disposed on the elastic portion, and a damper part connected to the elastic part. A method for fabricating a display device using the light-emitting element transfer stamp is also discussed.

A light-emitting element transfer stamp can include a stamp substrate, an elastic part disposed on the stamp substrate, a pickup portion disposed on the elastic portion, and a damper part connected to the elastic part. A method for fabricating a display device using the light-emitting element transfer stamp is also discussed.

A semiconductor device arrangement includes a carrier, a semiconductor device located on the carrier and an adhesive portion between the carrier and the semiconductor device. The semiconductor device includes a semiconductor stack, a first electrode, a second electrode, a first electrical connection and a second electrical connection. The first electrode is located between the semiconductor stack and the first electrical connection, and both of the first electrical connection and the second electrical connection are arranged to face the carrier. The adhesive portion includes a first protruding portion and a second protruding portion. The first protruding portion and the second protruding portion are respectively connected with the first electrical connection and the second electrical connection. The uppermost surfaces of the first electrical connection and the second electrical connection are located at different elevations, and at least one of the first and second electrical connections is located below the semiconductor stack.

A semiconductor device arrangement includes a carrier, a semiconductor device located on the carrier and an adhesive portion between the carrier and the semiconductor device. The semiconductor device includes a semiconductor stack, a first electrode, a second electrode, a first electrical connection and a second electrical connection. The first electrode is located between the semiconductor stack and the first electrical connection, and both of the first electrical connection and the second electrical connection are arranged to face the carrier. The adhesive portion includes a first protruding portion and a second protruding portion. The first protruding portion and the second protruding portion are respectively connected with the first electrical connection and the second electrical connection. The uppermost surfaces of the first electrical connection and the second electrical connection are located at different elevations, and at least one of the first and second electrical connections is located below the semiconductor stack.

A mass transfer assembly includes a temporary substrate and a transfer substrate. The temporary substrate is configured to adhere electrodes of each light-emitting element on a growth substrate, to separate each light-emitting element from the growth substrate, such that a light-emitting body of each light-emitting element is suspended. The transfer substrate is configured to adhere, through adhesion regions, a light-emitting body of each light-emitting element on the temporary substrate, to separate each light-emitting element from the temporary substrate, such that electrodes of each light-emitting element are suspended. One adhesion region adheres a light-emitting body of one light-emitting element. Positions of the adhesion regions on the transfer substrate are in one-to-one correspondence with positions of binding regions on a driving substrate. The transfer substrate is further configured to transfer each light-emitting element to the driving substrate, to bind electrodes of each light-emitting element to a corresponding binding region.

A mass transfer assembly includes a temporary substrate and a transfer substrate. The temporary substrate is configured to adhere electrodes of each light-emitting element on a growth substrate, to separate each light-emitting element from the growth substrate, such that a light-emitting body of each light-emitting element is suspended. The transfer substrate is configured to adhere, through adhesion regions, a light-emitting body of each light-emitting element on the temporary substrate, to separate each light-emitting element from the temporary substrate, such that electrodes of each light-emitting element are suspended. One adhesion region adheres a light-emitting body of one light-emitting element. Positions of the adhesion regions on the transfer substrate are in one-to-one correspondence with positions of binding regions on a driving substrate. The transfer substrate is further configured to transfer each light-emitting element to the driving substrate, to bind electrodes of each light-emitting element to a corresponding binding region.

Proposed is a method of manufacturing a micro LED display by units of dies omitting transfer of individual light-emitting elements, the method having effects that die-unit display transfer is performed by using a die-unit display, which is composed of light-emitting elements each including a driving element, die-unit display inspection, and a vacuum chuck-based LED pick-and-place transfer method, so that a perpendicular-line gap (ETC, Edge to Chip) between an edge side and an edge chip of each die may be at most half of a chip-to-chip gap (CTC, Chip to Chip), a bonding pad is included within the perpendicular-line gap (ETC) of the edge chip, a bonding gap for each LED die may not exceed half the chip-to-chip (CTC) gap, the driving elements are integrated into the light-emitting elements in a metallization process, and electrical/optical characteristic inspection by units of dies is performed on a wafer.

Proposed is a method of manufacturing a micro LED display by units of dies omitting transfer of individual light-emitting elements, the method having effects that die-unit display transfer is performed by using a die-unit display, which is composed of light-emitting elements each including a driving element, die-unit display inspection, and a vacuum chuck-based LED pick-and-place transfer method, so that a perpendicular-line gap (ETC, Edge to Chip) between an edge side and an edge chip of each die may be at most half of a chip-to-chip gap (CTC, Chip to Chip), a bonding pad is included within the perpendicular-line gap (ETC) of the edge chip, a bonding gap for each LED die may not exceed half the chip-to-chip (CTC) gap, the driving elements are integrated into the light-emitting elements in a metallization process, and electrical/optical characteristic inspection by units of dies is performed on a wafer.

A circuit board includes a base having a plurality of interconnections on an upper surface thereof, a first photosensitive solder resist (PSR) covering the interconnections and defining a pad open region exposing portions of the interconnections, a second PSR covering the first PSR and having an opening exposing the pad open region. The opening of the second PSR is larger than the pad open region of the first PSR.