A method of manufacturing optoelectronic devices, including the following successive steps: a) forming, by epitaxial growth on a growth substrate, an active diode stack; b) transferring, onto a first transfer substrate, the active diode stack; c) removing the growth substrate; d) forming, by cutting of the first transfer substrate and of the active diode stack, a plurality of dies; and e) transferring, onto a second transfer substrate, the dies, each comprising a portion of the active diode stack.

A method of manufacturing optoelectronic devices, including the following successive steps: a) forming, by epitaxial growth on a growth substrate, an active diode stack; b) transferring, onto a first transfer substrate, the active diode stack; c) removing the growth substrate; d) forming, by cutting of the first transfer substrate and of the active diode stack, a plurality of dies; and e) transferring, onto a second transfer substrate, the dies, each comprising a portion of the active diode stack.

A light plate, a method for assembling a light plate, and a display device are disclosed. The light plate includes a bottom plate, a vibration fitting assembly, and multiple light-emitting elements. The vibration fitting assembly includes a vibrator, a vibration plate disposed on a side of the vibrator facing away from the bottom plate, and a support elastic piece abutting against the vibration plate. Multiple groups of installation slots are defined in the vibration plate. Each light-emitting element includes a positioning structure matching a respective group of installation slots, and is installed in the installation slots through the positioning structure. When the light-emitting elements are laid on the vibration plate, the vibrator is started to drive the vibration plate to vibrate, thereby shaking the light-emitting elements, so that the positioning structure of each light-emitting element is fitted with the installation slots to complete the installation of the light-emitting elements.

A light plate, a method for assembling a light plate, and a display device are disclosed. The light plate includes a bottom plate, a vibration fitting assembly, and multiple light-emitting elements. The vibration fitting assembly includes a vibrator, a vibration plate disposed on a side of the vibrator facing away from the bottom plate, and a support elastic piece abutting against the vibration plate. Multiple groups of installation slots are defined in the vibration plate. Each light-emitting element includes a positioning structure matching a respective group of installation slots, and is installed in the installation slots through the positioning structure. When the light-emitting elements are laid on the vibration plate, the vibrator is started to drive the vibration plate to vibrate, thereby shaking the light-emitting elements, so that the positioning structure of each light-emitting element is fitted with the installation slots to complete the installation of the light-emitting elements.

A method for manufacturing a light-emitting device includes: providing a first structure including: a substrate having a first surface and a second surface, a plurality of semiconductor light-emitting units disposed on the second surface, and a semiconductor portion disposed on the second surface in a region in which the plurality of semiconductor light-emitting units are not disposed, the semiconductor portion being configured to emit no light; disposing the first structure on a support member such that the second surface faces the support member, disposing a first resin member between a portion of the first structure and a portion of the support member; and after the disposing of the first resin member, separating the substrate from the plurality of semiconductor light-emitting units and the semiconductor portion by irradiating laser light from a first surface side of the substrate toward the plurality of semiconductor light-emitting units and the semiconductor portion.

A method for manufacturing a light-emitting device includes: providing a first structure including: a substrate having a first surface and a second surface, a plurality of semiconductor light-emitting units disposed on the second surface, and a semiconductor portion disposed on the second surface in a region in which the plurality of semiconductor light-emitting units are not disposed, the semiconductor portion being configured to emit no light; disposing the first structure on a support member such that the second surface faces the support member, disposing a first resin member between a portion of the first structure and a portion of the support member; and after the disposing of the first resin member, separating the substrate from the plurality of semiconductor light-emitting units and the semiconductor portion by irradiating laser light from a first surface side of the substrate toward the plurality of semiconductor light-emitting units and the semiconductor portion.

A transfer substrate structure, a transfer assembly and a microdevice transfer method are provided. The transfer substrate structure includes a substrate and a response layer. The substrate includes multiple light-transmitting regions spaced apart from each other and a non-light-transmitting region located between the multiple light-transmitting regions. The response layer is arranged on a side of the substrate and covering at least a part of the multiple light-transmitting regions. The response layer includes a material which is easy to decompose and release gas under irradiation of a laser with a preset wavelength. It can mitigate the effect of the transfer quality of microdevices due to the variations of laser spot.

A transfer substrate structure, a transfer assembly and a microdevice transfer method are provided. The transfer substrate structure includes a substrate and a response layer. The substrate includes multiple light-transmitting regions spaced apart from each other and a non-light-transmitting region located between the multiple light-transmitting regions. The response layer is arranged on a side of the substrate and covering at least a part of the multiple light-transmitting regions. The response layer includes a material which is easy to decompose and release gas under irradiation of a laser with a preset wavelength. It can mitigate the effect of the transfer quality of microdevices due to the variations of laser spot.

The present invention is a method for producing a bonded light-emitting device wafer, in which a light-emitting device structure, to be a micro LED, and a to-be-bonded substrate are bonded with each other via an adhesive, the method includes the steps of bonding the light-emitting device structure to the to-be-bonded substrate via the adhesive to obtain a bonded wafer, producing a map data for removal by optically investigating a failure portion of the bonded wafer, and irradiating the failure portion of the bonded wafer with the laser light for removal from the to-be-bonded substrate based on the map data for removal, causing a portion of the adhesive which is included in the failure portion to absorb the laser light for removal and causing the portion of the adhesive which is included in the failure portion to sublimate, thereby removing the portion of the light-emitting device structure which is included in the failure portion to obtain the bonded light-emitting device wafer. This can provide the method for producing a bonded light-emitting device wafer capable of selectively removing the failure portion of the light-emitting device structure and producing the bonded light-emitting device wafer.

The present invention is a method for producing a bonded light-emitting device wafer, in which a light-emitting device structure, to be a micro LED, and a to-be-bonded substrate are bonded with each other via an adhesive, the method includes the steps of bonding the light-emitting device structure to the to-be-bonded substrate via the adhesive to obtain a bonded wafer, producing a map data for removal by optically investigating a failure portion of the bonded wafer, and irradiating the failure portion of the bonded wafer with the laser light for removal from the to-be-bonded substrate based on the map data for removal, causing a portion of the adhesive which is included in the failure portion to absorb the laser light for removal and causing the portion of the adhesive which is included in the failure portion to sublimate, thereby removing the portion of the light-emitting device structure which is included in the failure portion to obtain the bonded light-emitting device wafer. This can provide the method for producing a bonded light-emitting device wafer capable of selectively removing the failure portion of the light-emitting device structure and producing the bonded light-emitting device wafer.