Provided is a micro-light emitting diode (micro-LED) pixel including a first micro-LED, a second micro-LED on the first micro-LED, a level of the first micro-LED and a level of the second micro-LED being different from each other in a vertical direction, and a first reflective layer on the first micro-LED opposite to the second micro-LED, the first reflective layer being configured to reflect light incident from at least one of the first micro-LED and the second micro-LED in a direction opposite to the incident direction, wherein on a plane from a top plan view, a size of the first micro-LED and a size of the second micro-LED are different from each other in a horizontal direction, and wherein the first micro-LED and the second micro-LED are aligned in vertical direction corresponding to a main emission direction of light.

Provided is a micro-light emitting diode (micro-LED) pixel including a first micro-LED, a second micro-LED on the first micro-LED, a level of the first micro-LED and a level of the second micro-LED being different from each other in a vertical direction, and a first reflective layer on the first micro-LED opposite to the second micro-LED, the first reflective layer being configured to reflect light incident from at least one of the first micro-LED and the second micro-LED in a direction opposite to the incident direction, wherein on a plane from a top plan view, a size of the first micro-LED and a size of the second micro-LED are different from each other in a horizontal direction, and wherein the first micro-LED and the second micro-LED are aligned in vertical direction corresponding to a main emission direction of light.

A device for manufacturing a display panel includes a support portion on which a display substrate is mounted. The device includes a mask defining an opening corresponding to a transmission area of the laser beam, and a pressing portion including a pressing member configured to press against the mask. The device includes a laser irradiation portion disposed in a front surface of the support portion and configured to irradiate the display substrate with laser light through the mask. The mask includes a base layer configured to transmit laser light, and a light blocking pattern layer disposed on the base layer and including the opening.

A device for manufacturing a display panel includes a support portion on which a display substrate is mounted. The device includes a light transmitting plate disposed on a front surface of the support portion, a reflective member disposed within the light transmitting plate, and a light absorbing member configured to absorb laser light reflected by the reflective member. The device includes a pressing portion configured to move the light transmitting plate toward the display substrate in association with pressing a plurality of light emitting elements arranged on the display substrate with the light transmitting plate. The device includes a laser emission portion disposed on a front side of the light transmitting plate and configured to irradiate the display substrate with laser light through the light transmitting plate.

A device for manufacturing a display panel includes a support portion on which a display substrate is mounted. The device includes a light transmitting plate disposed on a front surface of the support portion, a reflective member disposed within the light transmitting plate, and a light absorbing member configured to absorb laser light reflected by the reflective member. The device includes a pressing portion configured to move the light transmitting plate toward the display substrate in association with pressing a plurality of light emitting elements arranged on the display substrate with the light transmitting plate. The device includes a laser emission portion disposed on a front side of the light transmitting plate and configured to irradiate the display substrate with laser light through the light transmitting plate.

A semiconductor component and a semiconductor device are provided. The semiconductor component includes a carrier, a semiconductor element, and a protective layer. The carrier includes a substrate and a bracket structure. The bracket structure is disposed on the substrate. The semiconductor element is disposed on the carrier. The semiconductor element includes a semiconductor stack, a plurality of electrodes, and a roughened structure. The semiconductor stack has a first surface and a second surface, which are opposite each other. The electrodes are disposed on the first surface. The roughened structure is disposed on the second surface and is in direct contact with the bracket structure. The protective layer is disposed on the first surface and covers the electrodes.

A semiconductor component and a semiconductor device are provided. The semiconductor component includes a carrier, a semiconductor element, and a protective layer. The carrier includes a substrate and a bracket structure. The bracket structure is disposed on the substrate. The semiconductor element is disposed on the carrier. The semiconductor element includes a semiconductor stack, a plurality of electrodes, and a roughened structure. The semiconductor stack has a first surface and a second surface, which are opposite each other. The electrodes are disposed on the first surface. The roughened structure is disposed on the second surface and is in direct contact with the bracket structure. The protective layer is disposed on the first surface and covers the electrodes.

A producing method for a light-emitting device including a black matrix in at least a part of peripheries of light-emitting elements on a wiring substrate includes: a step of allowing a black transfer film with a black transfer layer formed on one side of a light-transmitting base material to face, from the black transfer layer side, the substrate before the light-emitting elements are disposed; a step of applying laser light to the black transfer film from the base material side, transferring pieces of the black transfer layer to positions on the substrate of the light-emitting elements; and a step of disposing and mounting the light-emitting elements on the pieces of the black transfer layer that have been transferred to the substrate, deforming the black transfer layer to form a black matrix in at least a part of the peripheries of the light-emitting elements and connecting the elements to the substrate.

A producing method for a light-emitting device including a black matrix in at least a part of peripheries of light-emitting elements on a wiring substrate includes: a step of allowing a black transfer film with a black transfer layer formed on one side of a light-transmitting base material to face, from the black transfer layer side, the substrate before the light-emitting elements are disposed; a step of applying laser light to the black transfer film from the base material side, transferring pieces of the black transfer layer to positions on the substrate of the light-emitting elements; and a step of disposing and mounting the light-emitting elements on the pieces of the black transfer layer that have been transferred to the substrate, deforming the black transfer layer to form a black matrix in at least a part of the peripheries of the light-emitting elements and connecting the elements to the substrate.

A multi-layer display including an upper substrate including light emitting diodes (LEDs) fabricated on a topside of the upper substrate, and LED bonding pads fabricated on a bottomside of the upper substrate. The LED bonding pads being electrically connected to the LEDs through vias extending through the upper substrate. The display also including a lower substrate including LED driver circuits and driver bonding pads fabricated on a topside of the lower substrate. The driver bonding pads being electrically connected to the LED driver circuits, where the LED bonding pads and driver bonding pads are aligned and electrically connected to each other, thereby electrically connecting the LED driver circuits to the LEDs.