An input device includes a substrate structure, a conductive adhesive layer, and a piezoelectric structure. The conductive adhesive layer is disposed over the substrate structure. The conductive adhesive layer includes an adhesive portion and a plurality of metal particles, and the plurality of metal particles are substantially aligned in a first direction. The piezoelectric structure is disposed over the conductive adhesive layer. The piezoelectric structure extends in a second direction that is perpendicular to the first direction.

A vibration actuator includes an elastic body on which at least one projection is formed and a vibrating body including an electromechanical conversion device, and drives a driven member that is in contact with a contact portion of the projection by causing an end portion of the projection to perform an ellipsoidal movement in response to a combination of two vibration modes generated in the vibrating body when an alternating driving voltage is applied. The elastic body is formed integrally with the projection and a bonding portion between the projection and the electromechanical conversion device. A space is provided between the contact portion and the electromechanical conversion device to which the projection is bonded. The spring portion is provided between the bonding portion and the contact portion and causes the projection to exhibit a spring characteristic when the contact portion is pressed by the driven member.

To manufacture an oscillating structure, a wafer is processed by: forming torsional elastic elements; forming a mobile element connected to the torsional elastic elements; processing the first side of the wafer to form a mechanical reinforcement structure; and processing the second side of said wafer by steps of chemical etching, deposition of metal material, and/or deposition of piezoelectric material. Processing of the first side of the wafer is carried out prior to processing of the second side of the wafer so as not to damage possible sensitive structures formed on the first side of the wafer.

A method of producing a film including repeating a cycle comprised of an application step, a coat removal step and a sintering step N times (N≥2), wherein relative to a liquid supply position in the (n)th (1≤n≤N−1) cycle coat removal step, a liquid supply position in the (n+1)th cycle coat removal step is the same or shifted in a direction approaching the center of a substrate for all n(s) and at the same time, shifted in a direction approaching the center of the substrate for at least one of the (n)s; or is the same or shifted in a direction away from the center of the substrate for all n(s) and at the same time, shifted in a direction away from the center of the substrate for at least one of the (n)s.

A microelectronic device including a substrate including, in a stack, a base portion, a dielectric portion and an upper layer with a semi-conductive material base, at least one electrical connection element made of an electrically conductive material located above the upper layer and electrically insulated from the upper layer at least by a dielectric layer, the dielectric layer being in contact with the surface of the upper layer, at least one dielectric element including at least one trench forming a closed edge at the periphery or upright of at least one portion of the dielectric electrical connection element, located at least partially in the upper layer and delimiting a closed zone of said upper layer, at least one dielectric element having a portion exposed to the surface of the upper layer, device wherein the dielectric layer totally covers the exposed portion of at least one dielectric element.

A method for producing a piezoelectric actuator including forming a vibration plate, forming a first electrode on the vibration plate, forming a piezoelectric layer on the first electrode, and forming a second electrode on the piezoelectric layer, wherein the forming the vibration plate has a single layer forming step including forming a metal layer containing zirconium by a gas phase method, and forming a metal oxide layer by firing the metal layer, the single layer forming step is repeated, thereby forming the vibration plate in which the metal oxide layers are stacked, and the metal oxide layer has a thickness less than 200 nm.

A transducer includes a supporting body and a suspended structure mechanically coupled to the supporting body. The suspended structure has a first and a second surface opposite to one another along an axis, and is configured to oscillate in an oscillation direction having at least one component parallel to the axis. A first piezoelectric transducer is disposed on the first surface of the suspended structure, and a second piezoelectric transducer is disposed on the second surface of the suspended structure.

A method of manufacturing a dielectric device includes epitaxially growing a metal film on a substrate, forming a dielectric film on the metal film such that the dielectric film has a preferentially oriented structure, forming a first electrode film having a non-oriented or amorphous structure on the dielectric film, removing the substrate and the metal film from the dielectric film or removing the substrate from the metal film, and forming a second electrode film having a non-oriented or amorphous structure on the dielectric film or the metal film.

A piezoelectric material includes a first material layer including a polycrystalline lead zinc niobate-lead zirconate titanate material arranged in a 001 crystal direction; and a second material layer including a mono-crystalline material having a 001 crystal face, wherein the lead zinc niobate-lead zirconate titanate and the mono-crystalline material are different. Also a piezoelectric device including the piezoelectric material.

A method for forming a MEMS device is provided. The method includes forming a stack of piezoelectric films and metal films on a base layer, wherein the piezoelectric films and the metal films are arranged in an alternating manner. The method also includes forming a first trench in the stack of the piezoelectric films and the metal films. The method further includes forming at least one void at the side wall of the first trench. In addition, the method includes forming a spacer structure in the at least one void. The method further includes forming a contact in the first trench after the formation of the spacer structure.