H10H29/942

LIGHT-EMITTING DEVICE AND LIGHT-EMITTING UNIT
20250212591 · 2025-06-26 · ·

A light-emitting device includes a support; a first electrically-conductive part, a second electrically-conductive part, and a third electrically-conductive part disposed apart from one another on the support; a first light-emitting element disposed on the first electrically-conductive part; and an integrated circuit electrically connected to the first light-emitting element. At least a portion of the first electrically-conductive part is located between the second electrically-conductive part and the third electrically-conductive part in a first direction. The integrated circuit and the first light-emitting element are arranged side by side in a second direction orthogonal to the first direction. A maximum length of the integrated circuit in the second direction is smaller than a maximum length of the integrated circuit in the first direction.

METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING DEVICE
20250212590 · 2025-06-26 · ·

A method for manufacturing a light-emitting device includes: preparing an intermediate body including: a substrate, and a plurality of light-emitting elements disposed on the substrate, each including a first surface serving as a light extraction surface, a second surface opposite to the first surface, and a lateral surface connecting the first surface and the second surface; applying a powder composition including a reflective member and a silicone resin powder from above the first surfaces of the plurality of light-emitting elements through a sieve to locate the powder composition on the substrate and between the lateral surfaces of the plurality of light-emitting elements; and forming a first covering member by applying vibration to the powder composition and subsequently applying pressure in a thickness direction of the substrate to perform compression molding.

DISPLAY APPARATUS
20250221137 · 2025-07-03 ·

Disclosed is a display apparatus capable of selectively controlling a viewing angle and improving optical characteristics. An apparatus includes a pixel array including a pixel circuit and a plurality of subpixels including first and second light emitting elements connected to the pixel circuit. The apparatus includes an encapsulation layer on the pixel array to seal a light emitting element layer. The apparatus includes a touch sensor array including a black matrix, a sensor electrode and a dummy electrode on the encapsulation layer and overlapping the non-emission area of the pixel array. The apparatus includes a light control array on the touch sensor array. The sensor electrode may be disposed in a non-emission area of a first type subpixel among the plurality of subpixels, and the dummy electrode may be disposed in a non-emission area of a second type subpixel and a third type subpixel among the plurality of subpixels.

DISPLAY DEVICE
20250221127 · 2025-07-03 ·

A display device includes a substrate including a first area and a second area surrounding the first area, a first electrode disposed in the first area, a first bank layer disposed on the first electrode and defining a first opening that overlaps the first electrode and a second opening that overlaps the second area, an intermediate layer disposed on the first electrode, a second electrode disposed on the intermediate layer, and an encapsulation layer disposed on the second electrode and defining a third opening that overlaps the second area, wherein the first bank layer includes a first sub-bank layer and a second sub-bank layer, the second sub-bank layer being disposed on the first-sub bank layer and including a first tip extending toward the first opening and a second tip extending toward the second opening.

SEMICONDUCTOR LIGHT-EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME

A semiconductor light-emitting device includes a first light-emitting laminate including a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, and a first mesa region in which a boundary is at least partially demarcated by an etched region. The semiconductor light-emitting device further includes a first electrode within the etched region, a first transparent electrode in contact with the second conductivity type semiconductor layer, and a bridge electrode on the first transparent electrode. The first transparent electrode includes a first portion adjacent to the bridge electrode and a second portion further away from the bridge electrode, and the first portion is spaced apart from a first edge of the first mesa region by a first distance, and the second portion is spaced apart from a second edge of the first mesa region by a second distance greater than the first distance.

LIGHT STRING WITH REDUCED POWER CONSUMPTION AND IMPROVED BRIGHTNESS
20250251118 · 2025-08-07 ·

Provided is a light string with reduced power consumption and improved brightness, including: at least a first LED luminous body and a second LED luminous body in parallel, wherein each LED luminous body includes at least a resistor, a first LED light emitting chip and a second LED light emitting chip, and each LED luminous body is free of being provided with a current limiting IC chip, wherein the first LED light emitting chip and the second LED light emitting chip each include a plurality of LED light beads of the same specification in series, the first LED light emitting chip includes m LED light beads in series, and the second LED light emitting chip includes n LED light beads in series, and the resistor is in a series relationship with the first LED light emitting chip and the second LED light emitting chip.

UNIT SUB-PIXEL STRUCTURE OF MICRO-LED AND METHOD OF MANUFACTURING THE SAME
20250255065 · 2025-08-07 ·

Disclosed is a structure of a unit sub-pixel having a size of several microns or tens of microns divided into a plurality of light emitters and connected to each other so that the divided light emitters are diode-connected, and a manufacturing method thereof. By increasing the operating voltage to multiples of voltage values near the turn-on voltage of a single light emitter, power-consumption efficiency is increased, and light efficiency is increased.

DISPLAY DEVICE

A display device can include a substrate having a plurality of first sub pixels and a plurality of second sub pixels, a plurality of first light emitting diodes disposed in the plurality of first sub pixels and configured to emit light to one surface of the substrate, and a plurality of second light emitting diodes disposed in the plurality of second sub pixels and configured to emit light to an opposite surface to one surface of the substrate. The plurality of first light emitting diodes and the plurality of second light emitting diodes are alternately disposed on the plane. Accordingly, light is emitted to opposite surfaces of the substrate to display images on the opposite surfaces of the substrate.

Micro LED Emissive Display Architecture Using Bottom Emission Stack

Display structures and methods of fabrication are described. In an embodiment, a display structure includes an array of pixel driver chips embedded in an insulation layer, a redistribution layer (RDL) over and in electrical contact with the array of pixel driver chips, and an array of light emitting diodes (LEDs) over and in electrical contact with the RDL, where the array of LEDs includes different groups of LEDs designed for different wavelength emission spectra, and the top surfaces of the LEDs are coplanar.

OPTOELECTRONIC DEVICE
20250228054 · 2025-07-10 ·

An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer, and a second semiconductor layer; a contact electrode formed on the second semiconductor layer; an insulating reflective structure covering the contact electrode and including a plurality of insulating reflective structure openings to expose the contact electrode; a metal reflective structure covering the plurality of insulating reflective structure openings to electrically connect to the contact electrode; and an insulating structure including one or more first insulating structure openings to expose the first semiconductor layer and one or more second insulating structure openings to expose the metal reflective structure.