An optoelectronic apparatus comprises an at least partially transparent first cover, a second cover and at least one first layer segment, in particular intermediate layer segment, which is arranged between the first cover and the second cover. The first layer segment carries an arrangement of a plurality of optoelectronic light sources. The arrangement of the plurality of optoelectronic light sources has a defined shape with a defined contour and the first layer segment has the same shape and the same contour as the arrangement of the plurality of optoelectronic light sources.

A display device includes a first substrate on which a first sub pixel area, a second sub pixel area, and a third sub pixel area are respectively defined; a light emitting diode on the first substrate; a first refractive index layer corresponding to the first sub pixel area; a second refractive index layer corresponding to the second sub pixel area; a third refractive index layer corresponding to the third sub pixel area; and a protection layer on the first, second, and third refractive index layers, wherein at least two of the first refractive index layer, the second refractive index layer, and the third refractive index layer have different refractive indices.

Disclosed are a Micro LED micro-display chip and a manufacturing method thereof. The Micro LED micro-display chip includes a driver panel; multiple LED units arranged on the driver panel, wherein the multiple LED units includes multiple LED mesas in a one-to-one correspondence with the multiple LED units, and each of the LED units is independently drivable by the driver panel; a grid structure having multiple grid holes, wherein the multiple grid holes are respectively provided around the multiple LED mesas, and recess areas are formed between the LED mesas and the respective grid holes; a wavelength conversion layer provided on the grid structure, including multiple first wavelength conversion units filling the corresponding recess areas and configured to convert the first color light emitted by the LED units into second color light.

A light-emitting element includes a first semiconductor layer, a second semiconductor layer opposite to the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer, in which planar shapes of the first semiconductor layer, the second semiconductor layer, and the light-emitting layer each include at least one first side with a straight shape, and at least one second side with a curved shape.

A package having a field emission element may include a handle layer; a buried layer stacked on the handle layer; a device layer stacked on the buried layer; an insulating layer stacked in an upper region of the device layer; a gate electrode stacked in an upper region of the insulating layer; and at least one light-emitting element disposed in a lower region of the device layer, and configured to emit light through the device layer. The insulating layer may be configured with a plurality of insulating regions separated by first separation regions, and the gate electrode may be configured with a plurality of metal regions separated by second separation regions. The device layer may be provided with protruding portions disposed to protrude between the first separation regions between the insulating regions and the second separation regions between the metal regions.

An electronic device and methods of fabrication are disclosed. In an embodiment, an electronic device includes a display panel including a display area, a peripheral edge surrounding the display area, and a border region along the peripheral edge and surrounding the display area. The display panel may further include an array of pixel driver chips, a redistribution layer (RDL) over the array of pixel driver chips, and an array of light-emitting diodes (LEDs) mounted on the RDL within the display area, where the RDL includes a metal seal ring in the border region.

Embodiments of this application provide a display, a manufacturing method thereof, and an electronic device, and relate to the field of display technologies, to improve performance of the display. The display includes a first primary-color light emitting diode, a second primary-color light emitting diode, and a third primary-color light emitting diode that are stacked. The first primary-color light emitting diode includes a first overlapping portion and a first light emission portion. The second primary-color light emitting diode includes a second overlapping portion and a second light emission portion, the second light emission portion covers the first overlapping portion, and the second overlapping portion exposes the first light emission portion. The third primary-color light emitting diode covers the second overlapping portion and exposes the first light emission portion and the second light emission portion.

A display device comprises top pads on a first substrate; bottom pads below a second substrate; side lines on a side surface of the first substrate and a side surface of the second substrate; and ground pads in first edges of the first substrate and the second substrate, wherein each of the top pads and the bottom pads includes: first pads in first pad areas of the first edges of the first substrate and the second substrate; and second pads in second pad areas of second edges of the first substrate and the second substrate, a high potential voltage is applied to the first pads and a low potential voltage is applied to the second pads, and the ground pads are in the first edges of the first substrate and the second substrate to be spaced apart from each other with the first pads therebetween. Therefore, overcurrent is suppressed.

A display device includes a pixel circuit layer including a sub-pixel circuit having at least one transistor, an electrode layer disposed on the pixel circuit layer and including a pixel electrode electrically connected to the sub-pixel circuit and a common electrode spaced apart from the pixel electrode, a light emitting stack structure disposed on the electrode layer and including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an active layer interposed between the first and second semiconductor layers, a first bonding electrode connected to the first semiconductor layer and electrically connected to the pixel electrode, a second bonding electrode connected to a portion of the second semiconductor layer not overlapping the first semiconductor layer and the active layer and electrically connected to the common electrode, and a sub-common electrode covering at least a top surface of the light emitting stack structure.

A light emitting element includes a semiconductor stack structure, a first electrode, a second electrode, and an insulation layer. The semiconductor stack structure includes a first p-type semiconductor layer, a first active layer, a first n-type semiconductor layer, an intermediate layer, a second p-type semiconductor layer, a second active layer, and a second n-type semiconductor layer. The semiconductor stack structure includes a first opening and a second opening. The first opening is provided continuously in the first p-type semiconductor layer and the first active layer. The second opening in a plan view is located to overlap the first opening. The second opening is provided continuously in the first n-type semiconductor layer, the intermediate layer, the second p-type semiconductor layer, and the second active layer.