A display device includes a substrate having a light emitting area and a non-light emitting area. A light emitting element us disposed in the light emitting area on the substrate. A light transmission layer is disposed on the light emitting element. The light transmission layer includes a plurality of openings spaced apart from each other. The light transmission layer includes a plasma-treated surface part. A plurality of light control patterns is disposed in the plurality of openings.

A display device capable of more efficiently taking out light transmitted through a wavelength conversion layer is provided. The display device includes, at least, a light source provided in each of a first pixel and a second pixel and configured to emit light of a first wavelength, a first wavelength conversion layer formed in the first pixel and configured to convert the light of the first wavelength into light of a second wavelength, a second wavelength conversion layer formed in the second pixel and configured to convert the light of the first wavelength into light of a third wavelength different from the second wavelength, a first color filter provided in the first pixel and configured to selectively transmit the light of the second wavelength, a second color filter provided in the second pixel and configured to selectively transmit the light of the third wavelength, and a plurality of nano members on which the light of the second wavelength and the light of the third wavelength are incident, and wherein the plurality of nano members include a high refractive index dielectric, and wherein the plurality of nano members are arranged in the first pixel in a first periodic distance, and wherein the plurality of nano members are arranged in the second pixel in a second periodic distance different from the first periodic distance.

A display device capable of more efficiently taking out light transmitted through a wavelength conversion layer is provided. The display device includes, at least, a light source provided in each of a first pixel and a second pixel and configured to emit light of a first wavelength, a first wavelength conversion layer formed in the first pixel and configured to convert the light of the first wavelength into light of a second wavelength, a second wavelength conversion layer formed in the second pixel and configured to convert the light of the first wavelength into light of a third wavelength different from the second wavelength, a first color filter provided in the first pixel and configured to selectively transmit the light of the second wavelength, a second color filter provided in the second pixel and configured to selectively transmit the light of the third wavelength, and a plurality of nano members on which the light of the second wavelength and the light of the third wavelength are incident, and wherein the plurality of nano members include a high refractive index dielectric, and wherein the plurality of nano members are arranged in the first pixel in a first periodic distance, and wherein the plurality of nano members are arranged in the second pixel in a second periodic distance different from the first periodic distance.

An optoelectronic device, comprising a stack including a plurality of light-emitting diodes disposed at a distance from one another, and a plurality of electrically conductive terminals arranged between the diodes, and a light confinement layer extending over the stack and comprising reflective walls defining between them, spaces located to the right of each diode. Further, the confinement layer includes the porous alumina in at least one of the spaces, the porous alumina having, in at least one space, preferably in at least two of the spaces, even in each space, from among the at least some spaces, at least two open pores on a first face of the confinement layer which is located opposite the stack. The optical crosstalk phenomena are advantageously reduced.

An optoelectronic device, comprising a stack including a plurality of light-emitting diodes disposed at a distance from one another, and a plurality of electrically conductive terminals arranged between the diodes, and a light confinement layer extending over the stack and comprising reflective walls defining between them, spaces located to the right of each diode. Further, the confinement layer includes the porous alumina in at least one of the spaces, the porous alumina having, in at least one space, preferably in at least two of the spaces, even in each space, from among the at least some spaces, at least two open pores on a first face of the confinement layer which is located opposite the stack. The optical crosstalk phenomena are advantageously reduced.

To provide a laminate capable of suppressing an occurrence of warping of a compound semiconductor layer. The laminate includes: a driving circuit board and a semiconductor element layer which is provided on the driving circuit board and which includes a compound semiconductor layer. The compound semiconductor layer has an oval shape, a polygonal shape of which at least a corner has been cut off, or a polygonal shape of which at least a corner has been bent into a convex shape in a plan view.

To provide a laminate capable of suppressing an occurrence of warping of a compound semiconductor layer. The laminate includes: a driving circuit board and a semiconductor element layer which is provided on the driving circuit board and which includes a compound semiconductor layer. The compound semiconductor layer has an oval shape, a polygonal shape of which at least a corner has been cut off, or a polygonal shape of which at least a corner has been bent into a convex shape in a plan view.

Aspects of the present disclosure include a light emitting diode (LED) module including a plurality of LEDs, each of the plurality of LEDs being spaced apart from one or more neighboring LEDs by a spacing, a plurality of optics each disposed over a corresponding LED of the plurality of LEDs, each of the plurality of optics having a radius, and a plurality of LED chips disposed within the plurality of LEDs and each having a LED light emitting surface having one or more sides with a length, wherein a ratio of the spacing, the radius, and the length is configured to cause a light emitted from the LED engine to be narrower than 14 degrees and with a relative Cd/lm greater than 10 and with a measured application color uniformity of less than 0.005 Du.sup.1v.sup.1.

Aspects of the present disclosure include a light emitting diode (LED) module including a plurality of LEDs, each of the plurality of LEDs being spaced apart from one or more neighboring LEDs by a spacing, a plurality of optics each disposed over a corresponding LED of the plurality of LEDs, each of the plurality of optics having a radius, and a plurality of LED chips disposed within the plurality of LEDs and each having a LED light emitting surface having one or more sides with a length, wherein a ratio of the spacing, the radius, and the length is configured to cause a light emitted from the LED engine to be narrower than 14 degrees and with a relative Cd/lm greater than 10 and with a measured application color uniformity of less than 0.005 Du.sup.1v.sup.1.

According to one embodiment, a display device comprises a display panel including a display area displaying an image, a cover member including an inner surface facing the display panel, and a resin layer formed on the inner surface and overlapping the display area. The resin layer includes a first area and a second area adjacent to the first area and having a refractive index different from a refractive index of the first area.