A display device includes a first pixel, a second pixel, and a third pixel, bank patterns disposed on a substrate, light-emitting elements disposed between the bank patterns, color conversion layers disposed on the light-emitting elements between the bank patterns, and protective layers disposed on the color conversion layers, wherein the protective layers in the first pixel, the second pixel, and the third pixel have different thicknesses.

A micro LED display chip and a method for roughening the same, and the method includes providing a micro LED structure including a light emitting mesa, and the light emitting mesa has a surface including a light emitting surface; and performing a plasma bombardment on the light emitting surface using a first gas, and performing a dry etching treatment on the light emitting surface using a second gas, to form a roughened structure on the light emitting surface. The embodiments of the present disclosure can increase probability of photons' escape and improve light extraction efficiency.

An optoelectronic semiconductor component includes a semiconductor layer stack including a first semiconductor region, a second semiconductor region, and an active zone arranged between the first and second semiconductor regions. The second semiconductor region includes a first semiconductor layer and a second semiconductor layer. The second semiconductor layer is arranged on a side of the first semiconductor layer facing away from the active zone. At least one depression extends from a first main surface of the semiconductor layer stack through the first semiconductor region and the active zone and ends at the second semiconductor layer. The first semiconductor layer includes a first compound semiconductor material and the second semiconductor layer includes a second compound semiconductor material. The first compound semiconductor material has a higher aluminum content than the second compound semiconductor material.

A method of manufacturing a photonic device including the following steps: providing a structure including a base substrate covered by (Al,In,Ga)N/(Al,In,Ga)N mesas, a first mesa being fully porosified and having flanks covered by a protective layer, a second mesa being non-porosified, and a third mesa including porosified flanks and a non-porosified central portion, epitaxially growing an active structure including InGaN-based quantum wells simultaneously on the first mesa, the second mesa, and the third mesa, to respectively form a first active structure emitting at a first wavelength, a second active structure emitting at a second wavelength, and a third active structure emitting at a third wavelength.

Disclosed are a light-emitting diode, a method for manufacturing the same, and a light-emitting device. The light-emitting diode includes a semiconductor stack including a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked in sequence; when looking down at the semiconductor stack from the top of the light-emitting diode, the semiconductor stack includes a first region and a second region, the first region includes an exposed first semiconductor layer and a retained island; a first current blocking layer located on the island; a second current blocking layer located in the second region; a transparent conductive layer located in the second region and covering the second current blocking layer; a first electrode located on the first current blocking layer and electrically connected to the exposed first semiconductor layer; a second electrode located on the transparent conductive layer and electrically connected to the second semiconductor layer.

A display module may include: a substrate including a first pad and a common electrode pad; a light emitting diode including a first electrode connected to the first pad, and a second electrode; a conductive connector connected to the common electrode pad, and connecting the second electrode to the common electrode pad; an adhesive layer on the substrate; and a conductive layer on the adhesive layer, the conductive layer connecting the second electrode to the conductive connector, wherein the second electrode is on a side surface of the light emitting diode, the side surface being between a light emitting surface of the light emitting diode and a bottom surface of the light emitting diode that is opposite to the light emitting surface, and the light emitting surface is exposed from the conductive layer, and the conductive layer surrounds the second electrode of the light emitting diode.

Methods for fabricating optically active quantum memories into quantum-grade diamond thin films and then bonding them to semiconductor substrates are described. Semiconductor substrates are optically and electronically functionalized in preparation for using a flip-chip bonding technique to bond the functionalized substrates to overgrown diamond thin films that host color centers. By purposefully growing quantum-grade diamond thin films and implanting them with color centers separately from fabrication processes that functionalize the substrates, the high quality, purity, and crystallinity of the thin films are preserved, while also allowing for further customization of the types of color centers that are implanted into the diamond.

A conducting device including a plurality of conducting layers, where at least a portion of the conducting layers have a graded material concentration across consecutive layers which produces a lattice mismatch within conducting layers; etched surfaces extending through conducting layers, where the etched surfaces create localized stress regions within the conducting layerswhere at least a portion of the conducting layers are disposed on an substrate, and where the localized stress regions and the graded lattice mismatch are structurally configured to establish a boundary along which at least a portion of the conducting layers is separable from the substrate.

A Micro-Light Emitting Diode (Micro LED) chip and a forming method thereof, and an automobile lamp are provided. The Micro LED chip includes: a first epitaxial layer having a first side and a second side opposite to each other; a plurality of multi-quantum well layers disposed on the first side and in contact with the first epitaxial layer; a plurality of second epitaxial layers disposed on the first side, and each of the plurality of multi-quantum well layers is disposed between the first epitaxial layer and one corresponding second epitaxial layer; and a plurality of conductive mirror layers disposed on the first side, and each of the plurality of conductive mirror layers is electrically connected to one corresponding second epitaxial layer, and surrounds a non-light-emitting side of one corresponding multi-quantum well layer. Photoelectric conversion efficiency of the Micro LED chip is improved, and optical crosstalk is reduced.

A method for fabricating a high-speed semiconductor device, the method comprising the steps of: providing a light emitting device structure on substrate, activated p-doped; etching grooves on the p-doped layer, partially or fully filling the grooves with noble metal; and constructing at least one top emitting flip chip light emitting device and/or at least one bottom emitting flip chip light emitting device.