The present disclosure provides a light-emitting chip, a light-emitting device and a display apparatus. The light-emitting chip includes a pixel circuit layer, a light-emitting unit group located on a side of the pixel circuit layer, and a plurality of conductive pads located on a side of the pixel circuit layer facing away from the light-emitting unit. The pixel circuit layer includes at least a part of the structure of the pixel circuit and a plurality of signal lines. The light-emitting unit group includes at least one light-emitting unit, the light-emitting unit is electrically connected with the pixel circuit. One of the conductive pads is electrically connected with one of the signal lines. The light-emitting device includes the plurality of light-emitting chips and the second drive circuit, the plurality of conductive pads are connected with the second drive circuit. The display apparatus includes a light-emitting device.

A light emitting apparatus includes a substrate and at least one light emitting device disposed on the substrate and configured to emit light, wherein a luminous flux in a blue wavelength region is in the range of 0.01 times to 0.1 times the total luminous flux.

Disclosed are a micro-display chip and a preparation method thereof. The micro-display chip includes: a self-luminescence layer, a wavelength conversion layer, and a first transmitting-and-reflecting layer and/or a second transmitting-and-reflecting layer; the first transmitting-and-reflecting layer is disposed between the self-luminescence layer and the wavelength conversion layer; the second transmitting-and-reflecting layer is disposed on another surface of the wavelength conversion layer; the first transmitting-and-reflecting layer has low reflectivity and high transmissivity for the first color light and high reflectivity and low transmissivity for the second color light, and the second transmitting-and-reflecting layer has high reflectivity and low transmissivity for the first color light and low reflectivity and high transmissivity for the second color light. The micro-display chip of the present disclosure can effectively improve the absorbance and color purity of conversion light, thereby obtaining a brighter and purer conversion spectrum.

Provided is a display panel. The display panel includes a base substrate, a light-emitting layer, a package layer, and a light conversion layer that are successively stacked. The light conversion layer includes a plurality of light conversion units arranged in an array and a plurality of micro-mirror structures. The plurality of light conversion units include a plurality of first light conversion units, and the plurality of micro-mirror structures include a plurality of first micro-mirror structures surrounding the first light conversion units. Each of the first micro-mirror structures is configured to reflect at least a portion of light from an interior of each of the first light conversion units.

In accordance with one or more aspects of the present disclosure, an apparatus incorporating micro-LEDs is provided. The apparatus may include a first plurality of light-emitting devices for emitting light of a first color, a second light-emitting device for emitting light of a second color, and a light-conversion structure that converts light emitted by at least one of the first plurality of light-emitting devices into light of a third color. The first plurality of light-emitting devices may be fabricated on a substrate. The second light-emitting device is fabricated on a conductive via that is fabricated on the substrate. The light-conversion structure may include a plurality of quantum dots.

Disclosed are a Micro LED micro-display chip and a manufacturing method thereof. The Micro LED micro-display chip includes a driver panel; multiple LED units arranged on the driver panel, wherein the multiple LED units includes multiple LED mesas in a one-to-one correspondence with the multiple LED units, and each of the LED units is independently drivable by the driver panel; a grid structure having multiple grid holes, wherein the multiple grid holes are respectively provided around the multiple LED mesas, and recess areas are formed between the LED mesas and the respective grid holes; a wavelength conversion layer provided on the grid structure, including multiple first wavelength conversion units filling the corresponding recess areas and configured to convert the first color light emitted by the LED units into second color light.

Embodiments of this application provide a display, a manufacturing method thereof, and an electronic device, and relate to the field of display technologies, to improve performance of the display. The display includes a first primary-color light emitting diode, a second primary-color light emitting diode, and a third primary-color light emitting diode that are stacked. The first primary-color light emitting diode includes a first overlapping portion and a first light emission portion. The second primary-color light emitting diode includes a second overlapping portion and a second light emission portion, the second light emission portion covers the first overlapping portion, and the second overlapping portion exposes the first light emission portion. The third primary-color light emitting diode covers the second overlapping portion and exposes the first light emission portion and the second light emission portion.

A light-emitting device includes: a substrate; light-emitting elements disposed on an upper surface of the substrate and configured to be individually driven; a wavelength conversion part covering upper and lateral surfaces of each of the light-emitting elements; a first light-shielding part located on a lower surface side of each of the light-emitting elements and a lower surface side of the wavelength conversion part; and a second light-shielding part. At least one groove is provided in the wavelength conversion part and the first light-shielding part such that a groove of the at least one groove is located between adjacent ones of the light-emitting elements. The second light-shielding part is provided within the at least one groove. In a cross-sectional view, a width of the second light-shielding part increases as a distance from the substrate increases, and the second light-shielding part is exposed at an upper surface of the wavelength conversion part.

A transparent structure attached to a phosphor-converted LED (pcLED) is disclosed. The transparent structure increases total light output of the pcLED without further increasing the light emitting area of the phosphor layer which becomes challenging and unreliable for thin phosphor layers.

An inventive light-emitting array includes multiple semiconductor light-emitting diodes (LEDs). Each LED of the array includes first and second doped semiconductor layers and an active layer them, and emits light at a nominal emission vacuum wavelength .sub.0 resulting from charge carrier recombination at the active layer. The active layer differs in chemical composition from the first and second semiconductor layers and is between 0.1 nm thick and 1 nm thick. Each LED exhibits a small-signal bandwidth greater than 0.10 GHZ, in some instances at a nonzero current density less than 2000 A/cm.sup.2. In some instances the doped semiconductor layers can be p-doped and n-doped GaN layers, and the active layer can be a monolayer of a III-nitride compound, e.g., InGaN.