A micro LED display device includes a circuit substrate, an epitaxial structure layer and a metal reflective layer. The circuit substrate includes a display area and a non-display area adjacent to the display area. The epitaxial structure layer includes a first surface facing the circuit substrate, a second surface away from the circuit substrate, and a plurality of ion implantation regions facing the circuit substrate. The ion implantation regions define a plurality of micro LED units spaced apart from each other. The first surface is a planar surface within the display area, and each groove in the second surface corresponds to one of the ion implantation regions. The metal reflective layer includes a plurality of reflective portions corresponding to the grooves. The reflective portions define a plurality of light transmission regions, and each light transmission region corresponds to one of the micro LED units.

A light-emitting device includes a first region and a second region configured to emit lights with different luminances when the light-emitting device is turned on, in which luminance La of the first region is higher than luminance Lb of the second region. When an emission spectrum of light emitted from the first region has a maximum intensity Ia.sub.max in a wavelength range of 400 nm to 500 nm, an intensity Ia.sub.507 at a wavelength of 507 nm, and an intensity Ia.sub.555 at a wavelength of 555 nm, an emission spectrum of light emitted from the second region has an intensity Ib.sub.507 at a wavelength of 507 nm, and an intensity Ib.sub.555 at a wavelength of 555 nm, and relative intensities Ira.sub.507, Ira.sub.555, Irb.sub.507, and Irb.sub.555 are obtained by respectively dividing Ia.sub.507, Ia.sub.555, Ib.sub.507, and Ib.sub.555 by Ia.sub.max, Ira.sub.507 is lower than Irb.sub.507, and Ira.sub.555 is higher than Irb.sub.555.

A light emitting element includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a p-type dopant, an active layer disposed between the first semiconductor layer and the second semiconductor layer, an electrode layer disposed on the second semiconductor layer, and an insulating film surrounding at least a side surface of the active layer. The first semiconductor layer has a diameter in a range of about 0.5 m to about 10 m, and the light emitting element has an external quantum efficiency greater than or equal to about 23%.

Disclosed is a light emitting diode which includes a first electrode layer including a reflective material, a semiconductor layer disposed on the first electrode layer and including a plurality of light emitting members spaced apart from each other, a second electrode layer including a plurality of sub-electrodes disposed on the plurality of light emitting members, respectively, and a protective layer covering the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a base semiconductor layer disposed on the first electrode layer and a plurality of sub-semiconductor layers protruding from the base semiconductor layer, a plurality of active layers disposed on the plurality of sub-semiconductor layers, respectively, and a plurality of active layers disposed on the plurality of sub-semiconductor layers, respectively. The plurality of sub-electrodes are disposed on the plurality of second semiconductor layers, respectively.

A display device includes a first pixel, a second pixel, and a third pixel, bank patterns disposed on a substrate, light-emitting elements disposed between the bank patterns, color conversion layers disposed on the light-emitting elements between the bank patterns, and protective layers disposed on the color conversion layers, wherein the protective layers in the first pixel, the second pixel, and the third pixel have different thicknesses.

Dual core LED structures and methods of fabrication are described in which serial diodes are integrated into a single dual core LED chip. In some configurations serial diodes are integrated in a side-by-side configuration and separated by a trench. In other configurations the serial diodes are vertically integrated, and may be assembled using a wafer-on-wafer processing sequence.

A light-emitting device, a display apparatus and a backlight apparatus are provided. The light-emitting device includes a sub-light-emitting unit. The sub-light-emitting unit includes: a first semiconductor layer; a second semiconductor layer, stacked with the first semiconductor layer and having a material different from a material of the first semiconductor layer; a light-emitting layer, located between the first semiconductor layer and the second semiconductor layer; a current spreading layer, located on a side of the first semiconductor layer away from the second semiconductor layer; and an insulating layer, located between the current spreading layer and the first semiconductor layer. The current spreading layer and the second semiconductor layer are electrically connected with the first semiconductor layer through a via hole penetrating the insulating layer.

A light emitting device according to an exemplary embodiment includes a first light emission region and a second light emission region. The first and second light emission regions include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active region formed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively, an area of the first light emission region is larger than an area of the second emission region, and at least one of the first emission region or the second emission region emits light of a plurality of peak wavelengths.

Disclosed are a light-emitting diode, a method for manufacturing the same, and a light-emitting device. The light-emitting diode includes a semiconductor stack including a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked in sequence; when looking down at the semiconductor stack from the top of the light-emitting diode, the semiconductor stack includes a first region and a second region, the first region includes an exposed first semiconductor layer and a retained island; a first current blocking layer located on the island; a second current blocking layer located in the second region; a transparent conductive layer located in the second region and covering the second current blocking layer; a first electrode located on the first current blocking layer and electrically connected to the exposed first semiconductor layer; a second electrode located on the transparent conductive layer and electrically connected to the second semiconductor layer.

A composition of matter comprising a doped substrate a mask layer having a thickness of 2 nm or less on top of said substrate wherein a plurality of openings are present through said mask layer; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said openings, said nanowires or nanopyramids comprising at least one semiconducting group III-V compound.