An interposer may include a temporary substrate, a common pad disposed on the temporary substrate and light emitting diodes (LEDs) disposed on the common pad. Each of the light emitting diodes may include a first electrode, a first semiconductor layer, an emission layer, a second semiconductor layer, a second electrode, and a passivation layer. The second electrode, the second semiconductor layer, the emission layer, the first semiconductor layer and the first electrode may have a structure formed from sequential lamination. The passivation layer may enclose the second semiconductor layer, the emission layer and the first semiconductor layer. The common pad may be electrically connected to the second electrode at a lower side of the light emitting diodes. The first electrode in each of the light emitting diodes may extend to an upper portion of the passivation layer. A method for inspecting light emitting diodes disposed on a temporary substrate is also disclosed.

An electronic device and methods of fabrication are disclosed. In an embodiment, an electronic device includes a display panel including a display area, a peripheral edge surrounding the display area, and a border region along the peripheral edge and surrounding the display area. The display panel may further include an array of pixel driver chips, a redistribution layer (RDL) over the array of pixel driver chips, and an array of light-emitting diodes (LEDs) mounted on the RDL within the display area, where the RDL includes a metal seal ring in the border region.

A light emitting element includes a semiconductor stack structure, a first electrode, a second electrode, and an insulation layer. The semiconductor stack structure includes a first p-type semiconductor layer, a first active layer, a first n-type semiconductor layer, an intermediate layer, a second p-type semiconductor layer, a second active layer, and a second n-type semiconductor layer. The semiconductor stack structure includes a first opening and a second opening. The first opening is provided continuously in the first p-type semiconductor layer and the first active layer. The second opening in a plan view is located to overlap the first opening. The second opening is provided continuously in the first n-type semiconductor layer, the intermediate layer, the second p-type semiconductor layer, and the second active layer.

A metal stack of layers contacting an N-type layer of a light emitting diode (LED) device comprises: an ohmic contact layer electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer; a reflective layer electrically contacting the ohmic contact layer; a first material barrier layer electrically contacting the reflective layer; a current carrying layer electrically contacting the first material barrier layer; and a second material barrier layer electrically contacting the current carrying layer. LED devices incorporate the metal stack of layer as a bonding material and/or as an ohmic contact-reflective material. Methods of making and using the metal stacks and LED devices are also provided.

A light-emitting element, and a light-emitting component and its manufacturing method, belonging to field of semiconductor manufacturing technologies, are provided. The light-emitting element includes at least two light-emitting units adjacent to one another, and a bridging conductive bridge bridged between adjacent light-emitting units to make the adjacent light-emitting units be connected in series. The light-emitting unit includes an epitaxial structure and a dielectric layer. The epitaxial structure includes first and second surfaces. The light-emitting units connected in series are defined with a trench therebetween penetrating from the first surface to the second surface. The second surface is formed with multiple removal areas. The dielectric layer covers the second surfaces of the light-emitting units connected in series and extends across the trench. The bridging conductive bridge is on a side of the dielectric layer facing away from the epitaxial structure and electrically connected to the epitaxial structure through the removal area.

Provided is a tiled display device including modules adjacent to each other, each module including a substrate, a light emitting element on the substrate, an electrode configured to apply a voltage to the light emitting element, and a chamfered portion including a surface chamfered along a corner portion of each module of the modules, the chamfered portion being inclined with respect to a surface of the substrate, and a seam portion between adjacent modules of modules, the seam portion being filled with a transparent resin.

A device and method of forming the device are disclosed herein. The device having a silicone layer disposed on an LED structure, the device further including an inorganic protection layer disposed on a surface of the phosphor layer opposite the LED structure. The method of forming the device includes using atomic layer deposition to deposit the inorganic protection layer on the silicone layer.

Provided is a display device. The display device includes a substrate, a display panel including a display disposed on a front surface of the substrate and a flexible base material extending from the display to surround a portion of each of a side surface and a rear surface of the substrate, and a support layer disposed between the side surface of the substrate and the flexible base material to support the flexible base material. The flexible base material includes: a pair of curved portions spaced apart from the support layer and a side cover portion that is configured to connect the pair of curved portions to each other and is in contact with the support layer.

A lighting-board packaging structure includes a circuit substrate, an LED chip, a diffuser structure, a black light-transmissive layer, a haze layer, and an anti-reflection layer. The LED chip is disposed on the circuit substrate by a chip-on-board process and emits a color light. The diffuser structure has two types of scattering particles doped therein and covers the LED chip for homogenizing and diffusing the color light. A doping concentration of each of the two types of scattering particles in the diffuser structure is not greater than 10%. The black light-transmitting layer is stacked on the diffuser structure to reduce reflection of an ambient light incident to the lighting-board packaging structure. The haze layer is stacked on the black light-transmissive layer for scattering the ambient light. The anti-reflection layer is stacked on the haze layer for allowing the ambient light to enter.

A display device includes a first substrate, a light emitting unit disposed on the first substrate and electrically connected to the first substrate, a light converting layer disposed on the light emitting unit, a color filter layer disposed on the light converting layer, a microlens layer disposed on the color filter layer, and a second substrate disposed on the microlens layer. The microlens layer includes a plurality of microlens units, and in a normal direction of the display device, the plurality of microlens units overlap the color filter layer.