A manufacturing method of electronic device includes: (a) providing a circuit substrate including: a substrate; a plurality of electronic units disposed on the substrate; and a first bonding member disposed on the substrate, wherein the first bonding member surrounds the electronic units; (b) respectively disposing a plurality of cover plates on at least part of the electronic units, and disposing a bonding material on the first bonding member, wherein one of the cover plates includes a second bonding member and, in the top view direction of the circuit substrate, the second bonding member overlaps at least part of the first bonding member, and the bonding material does not overlap the second bonding member; and (c) melting the bonding material to allow part of the bonding material to flow in between the first bonding member and the second bonding member.

An electronic apparatus includes a display panel, and a window member disposed on the display panel. The window member may include a support film, a coating window disposed on the support film, and a light-blocking pattern spaced apart from the coating window with the support film disposed therebetween. The light-blocking pattern may be formed of a light-blocking composition including a black colorant, an ultraviolet photoinitiator, a near-infrared photosensitizer, a near-infrared photoinitiator, and an adhesive resin.

A lighting device, including: a lamp housing and a lamp cap connected to each other and formed a closed space; at least one light-emitting diode filament disposed in the closed space; and a stem connected to the lamp cap and electrical conducted with the light-emitting diode filament, wherein the light-emitting diode filament includes: a chip strip structure; a light conversion unit wrapping the chip strip structure; and electrodes located at two ends of the chip strip structure respectively and electrically connected thereto, wherein at least part of the electrodes are wrapped in the light conversion unit; the chip strip structure includes a substrate with a first end and a second end, and a deposition segment located between the first end and the second end; and the deposition segment includes a plurality of deposition units with a connecting layer disposed therebetween, and a conductor layer electrically connects the deposition units.

A display unit and a display panel are provided. The display unit includes a light-emitting structure and a connection structure disposed at a periphery of the light-emitting structure. The connection structure includes a substrate, a first conductive layer, an insulating layer, and a second conductive layer. The first conductive layer is disposed at a side of the substrate. The insulating layer is disposed at the side of the substrate and covers the first conductive layer. The insulating layer at a side of the first conductive layer away from the substrate defines at least one first through-hole to make part of the first conductive layer exposed. The second conductive layer is disposed at a side of the insulating layer away from the substrate. The second conductive layer is also disposed in the at least one first through-hole and electrically coupled with the first conductive layer.

A display device, a tiled display device including the same, and an electronic device including the display device are provided. The display device including a substrate, a first pad electrode on the substrate, a second pad electrode spaced from the first pad electrode on the substrate, a light emitting element including a first electrode connected to the first pad electrode and a second electrode connected to the second pad electrode, a first power line spaced from the first pad electrode on the substrate, connected to a first side of the second pad electrode, and configured to receive a first source voltage, and a pad light blocking pattern overlapping a first gap between the first pad electrode and the first power line and a second gap between the second pad electrode and the first power line.

A light emitting element includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a p-type dopant, an active layer between the first semiconductor layer and the second semiconductor layer, an electrode layer disposed on the second semiconductor layer, and an insulating film surrounding an outer surface of at least the active layer. A diameter of the first semiconductor layer is in a range of about 0.5 m to about 10 m, and the insulating film includes a first layer surrounding the first semiconductor layer, the second semiconductor layer, and the active layer and a second layer disposed on the first layer and including aluminum nitride (AlN).

A micro LED display panel and a display device are provided. The micro LED display panel includes: a plurality of micro LED elements each including a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked from top down; and a plurality of contact pads each arranged between adjacent micro LED elements of a part of the plurality of micro LED elements and conductively coupled to the respective first semiconductor layers of the adjacent micro LED elements.

A micro LED element, a micro LED display panel, and a display device are provided. The micro LED element includes: a first semiconductor layer, a light emitting layer, and a second semiconductor layer stacked from top down, wherein the first semiconductor layer includes: a main part for passing light generated by the light emitting layer; and an extension part for connecting to the extension part of the first semiconductor layer of an adjacent micro LED element; and a metal contact including a plurality of metal particles arranged on or above the extension part of the first semiconductor layer.

An anti-reflection layer includes a substrate layer including a substrate high-refractive layer and a substrate low-refractive layer, and a surface layer disposed on the substrate layer and including a surface high-refractive layer and a surface low-refractive layer. A thickness of the substrate high-refractive layer may be 5 nm to 70 nm, a thickness of the substrate low-refractive layer may be 5 nm to 70 nm, a thickness of the surface high-refractive layer may be 100 nm to 180 nm, and a thickness of the surface low-refractive layer may be 60 nm to 110 nm.

An electronic device includes a camera sensor unit including a short side and a long side, a camera lens unit disposed on the camera sensor unit, a display panel disposed on the camera lens unit, and a protective film disposed on the display panel and having birefringence, wherein the protective film has a refractive index n.sub.1 in a first direction perpendicular to a thickness direction of the protective film, a refractive index n.sub.2 in a second direction perpendicular to each of the thickness direction and the first direction, and a refractive index n.sub.3 in the thickness direction, and the refractive index n.sub.1 is greater than the refractive index n.sub.2 and the refractive index n.sub.3, and the first direction of the protective film and a direction the short side of the camera sensor unit extends are parallel to each other.