A display device comprises a light emitting diode (LED) which includes a porous semiconductor material, wherein the device comprises a pixel comprising a plurality of subpixels each having a light-emitting layer. A first subpixel has a first light-emitting layer having a first area A1, and a second subpixel has a second light-emitting layer having a second area A2 different from the first area A1. The first subpixel is configured to emit at a first peak wavelength, and the second subpixel is configured to emit at a second peak wavelength different from the first peak wavelength. A method of controlling this display device and a method of manufacturing said display device are also provided.

The present relates to a micro LED display device and a method for manufacturing the micro LED display device, wherein micro LEDs and a drive substrate can be stably bonded without a reduction in light extraction efficiency. The micro LED display device a drive substrate having a first pad and a second pad that are connected to different potentials; and micro LEDs having a light-emitting structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked, an n-type pad electrically connecting the n-type semiconductor layer and the first pad, and a p-type pad electrically connecting the p-type semiconductor layer and the second pad. One of the n-type pad or the p-type pad may be provided on a side surface of the light-emitting substrate.

In an embodiment a method for producing an array of light emitting elements includes providing a growth substrate, applying a mask having a plurality of apertures to the growth substrate, growing structures into the apertures and processing at least some of the structures into light emitting elements, wherein adjacent apertures are arranged at a first distance to each other, wherein adjacent light emitting elements are arranged at a second distance to each other, wherein the second distance is greater than the first distance, wherein at least some of the structures are reduced in an area and the reduced structures are processed into light emitting elements, and wherein the structures are reduced in area by material removal.

Selective bonding integrates semiconductor devices onto a receiver substrate. A laser releases devices from a substrate according to a pattern. The pattern syncs laser frequency and speed/location of the stage with the receiver substrate, or uses a diffractive optical element and pottering, or masks the emitted laser to a desired size/shape. Laser steering employs digital micromirror devices or fast scanning mirrors followed by an f-theta lens. Sequential selective bonding and laser processing enables full-colour display by transferring violet or blue micro-LEDs and employing colour-conversion layers or sequentially patterning red, green, and blue sub-pixels. The same method transfers driving circuits onto a substrate. A pattern from defective devices is generated after test and used for repair. A second round prints micro-devices onto pads in or beside defective devices. Sidewalls coated with a reflective layer stops crosstalk between pixels, improves light-extraction efficiency, improves emission angle, and provides a uniform light pattern.

A self-assembly apparatus can include a fluid chamber for accommodating a fluid and semiconductor light-emitting elements, a conveyor to convey an assembly substrate so one surface of the assembly substrate is immersed in the fluid, the assembly substrate having a plurality of assembly electrodes, a magnet array spaced apart from the fluid chamber to apply a magnetic force to the semiconductor light-emitting elements, a power supply to apply power to the plurality of assembly electrodes disposed on the assembly substrate so that the semiconductor light-emitting elements are seated in a preset region on the assembly substrate, and a repair substrate disposed to face the one surface of the assembly substrate and including a plurality of pair electrodes on which an electric field is generated as power is supplied. The plurality of pair electrodes can be disposed at the same interval as the plurality of assembly electrodes.

Embodiments of the present disclosure provide a thin film transistor (TFT) back panel a light-emitting diode (LED) display panel and a manufacturing method therefor. In the TFT back panel provided in the embodiments of the present disclosure, a pressure-sensitive transistor is disposed. When a first pressure-sensitive material layer is subjected to a pressure, a pressure-sensitive transistor is turned on to generate a current, and a pressure signal is converted into an electrical signal. Changes in a pressure applied to the TFT back panel during transfer and pressing of an LED can be monitored in real time by monitoring a magnitude of the electrical signal.

A light emitting element includes a first element rod including a first semiconductor layer and an active layer and having a first inclination angle on a side surface; a second element rod on the first element rod and having a second inclination angle on a side surface; a third element rod on the second element rod and having a third inclination angle on a side surface, the second inclination angle being smaller than the first inclination angle and the third inclination angle; a protective layer around one side and an other side of the first element rod, a side of the second element rod, and a side of the third element rod; and a contact electrode around the protective layer and electrically connected to the first semiconductor layer.

In some embodiments, methods for fabricating micro-LEDs may include bonding a semiconductor wafer to a Complementary Metal-Oxide-Semiconductor (CMOS) wafer via one or more adhesive layers, etching the LED epilayer and the one or more adhesive layers to form a plurality of micro-LED structures, and fabricating an electrode layer on the plurality of micro-LED structures. The semiconductor wafer may include an LED epilayer including an n-GaN layer, a p-GaN layer, and an active layer positioned between the n-GaN layer and the p-GaN layer. Prior to the bonding of the semiconductor layer to the CMOS wafer, a stress release pattern may be formed in the LED epilayer. The stress release pattern may include a plurality of geometrical shapes (e.g., squares, rectangles, hexagons, rings, etc.) that may facilitate the release of mechanical stresses induced during the subsequent processing of the semiconductor wafer and/or the fabrication of the micro-LEDs.

A MicroLED display panel includes a plurality of display structures, where each display structure includes a first electrode, a second electrode, a first semiconductor layer, a second semiconductor layer, and a light emitting layer; first electrodes, first semiconductor layers, and light emitting layers of adjacent display structures are independent of each other; the first semiconductor layer and the second semiconductor layer are respectively located on surfaces of two sides of the light emitting layer; the first electrode is located on a side that is of the first semiconductor layer and that is away from the light emitting layer, and the second electrode is located on a side that is of the second semiconductor layer and that is away from the light emitting layer; the light emitting layer of each display structure corresponds to one pixel region; and the second electrode is routed around each pixel region.

A method of manufacturing an optoelectronic device including the steps of manufacturing of the display pixel circuits, each comprising an emission surface, and on the surface, walls delimiting at least one cavity, of bonding of the display pixel circuits to a support, and of filling of the at least one cavity of each display pixel circuit with a first filling material to form a first color conversion module in the cavity.