H10H29/8512

APPARATUSES INCORPORATING MICRO-LEDS AND METHODS FOR FABRICATING THE SAME
20250268010 · 2025-08-21 · ·

In accordance with one or more aspects of the present disclosure, an apparatus incorporating micro-LEDs is provided. The apparatus may include a first plurality of light-emitting devices for emitting light of a first color, a second light-emitting device for emitting light of a second color, and a light-conversion structure that converts light emitted by at least one of the first plurality of light-emitting devices into light of a third color. The first plurality of light-emitting devices may be fabricated on a substrate. The second light-emitting device is fabricated on a conductive via that is fabricated on the substrate. The light-conversion structure may include a plurality of quantum dots.

TRANSPARENT STRUCTURE ON pcLED TO INCREASE LIGHT FLUX
20250280646 · 2025-09-04 · ·

A transparent structure attached to a phosphor-converted LED (pcLED) is disclosed. The transparent structure increases total light output of the pcLED without further increasing the light emitting area of the phosphor layer which becomes challenging and unreliable for thin phosphor layers.

HIGH-SPEED MICRO-LED DEVICE
20250287756 · 2025-09-11 · ·

An inventive light-emitting array includes multiple semiconductor light-emitting diodes (LEDs). Each LED of the array includes first and second doped semiconductor layers and an active layer them, and emits light at a nominal emission vacuum wavelength .sub.0 resulting from charge carrier recombination at the active layer. The active layer differs in chemical composition from the first and second semiconductor layers and is between 0.1 nm thick and 1 nm thick. Each LED exhibits a small-signal bandwidth greater than 0.10 GHZ, in some instances at a nonzero current density less than 2000 A/cm.sup.2. In some instances the doped semiconductor layers can be p-doped and n-doped GaN layers, and the active layer can be a monolayer of a III-nitride compound, e.g., InGaN.

LIGHT SOURCE, LIGHT-EMITTING MODULE, AND MOBILE TERMINAL
20250311510 · 2025-10-02 · ·

A light source includes: a light-emitting element including: a first light-emitting part configured to emit first light, and a second light-emitting part configured to emit second light having a peak emission wavelength different from a peak emission wavelength of the first light, wherein: the first light-emitting part and the second light-emitting part are stacked in a first direction; and a wavelength conversion member disposed on the light-emitting element, the wavelength conversion member including: a first phosphor layer configured to be excited by the first light and emit third light, and a second phosphor layer configured to be excited by the second light and emit fourth light having a peak emission wavelength different from a peak emission wavelength of the third light, wherein: the first phosphor layer and the second phosphor layer are stacked in the first direction.

MICROLED-BASED DISPLAY DEVICES
20250311509 · 2025-10-02 ·

Embodiments of a display device are described. A display device includes a substrate (204) and a sub-pixel (R1, R2) configured to emit a display light having an emission spectrum with a first peak wavelength and a second peak wavelength. The sub-pixel includes a microLED (218) disposed on the substrate and a NS-based CC layer (220) disposed on the microLED. The NS-based CC layer includes QDs configured to emit a first light having the first peak wavelength. The microLED is configured to emit a second light having the second peak wavelength. A first portion of the second light is absorbed by the QDs and down-converted to the first light and a second portion of the second light is transmitted through the NS-based CC layer (220).

LED DISPLAY DEVICE COMPRISING STACKED MICRO-LED ELEMENTS AND METHOD FOR MANUFACTURING SAME
20250311508 · 2025-10-02 · ·

A light emitting diode (LED) display device includes: a first electrode layer and a second electrode layer disposed to be spaced apart from each other on a substrate; a plurality of micro-LED elements stacked in a longitudinal direction to be parallel to a plane of the substrate on the first electrode layer and the second electrode layer and stacked to be spaced apart from each other; and a first connection electrode coupled to both ends of the plurality of micro-LED elements and extending from one ends of the plurality of micro-LED elements to the first electrode layer and a second connection electrode extending from the other ends of the plurality of micro-LED elements to the second electrode layer and connected to the second electrode layer.

Display apparatus and electronic equipment

Provided is a display apparatus that can suppress degradation of image quality caused by possible color drift. A display apparatus includes a board including a driving circuit based on a current amplitude modulation scheme, multiple first light emitting elements and multiple second light emitting elements two-dimensionally arranged on the board, and a wavelength correcting layer that is able to correct wavelengths of light emitted from the multiple first light emitting elements. The driving circuit is able to independently gamma-correct a first signal fed to the first light emitting element and a second signal fed to the second light emitting element.

DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
20250324832 · 2025-10-16 ·

A display device includes: a display unit including a plurality of light emitting diodes; a color conversion unit including a bank and a color conversion layer; and an adhesive cell gap maintenance layer between the display unit and the color conversion unit, wherein the adhesive cell gap maintenance layer includes an adhesive cell gap maintenance part, and the adhesive cell gap maintenance part includes a beads spacer and an adhesive organic material.

METHOD OF PRODUCING SINGLE-CRYSTAL SPHERICAL SILICON NANOPARTICLES
20250333875 · 2025-10-30 · ·

The present disclosure relates to a method of producing single-crystal spherical silicon nanoparticles which are monocrystalline and spherical and has an average particle diameter of 1 nm to 20 nm. The method includes a step of mixing and reacting a raw material liquid containing silicon halide with a reduction liquid containing an anion of a condensed aromatic compound produced from lithium, sodium or potassium and the condensed aromatic compound. The anion of the condensed aromatic compound is prepared by mixing the lithium, sodium or potassium and the condensed aromatic compound at a temperature of less than 0 C. The single-crystal spherical silicon nanoparticles produced by the method of the present invention can produce fluorescence from blue to red upon excitation by light in a wide range of wavelengths from deep ultraviolet light having a wavelength of 200 nm to 300 nm to visible light, and can increase the conventionally known fluorescence quantum efficiency of silicon nanoparticles from around 1% to 10% or more.

SINGLE-CRYSTAL SPHERICAL SILICON NANOPARTICLES
20250333876 · 2025-10-30 · ·

The present disclosure relates to single-crystal spherical silicon nanoparticles which are monocrystalline are spherical and have an average particle diameter of 1 nm to 20 nm as well as a method of producing the same. The single-crystal spherical silicon nanoparticles of the present invention can produce fluorescence at a high fluorescence quantum efficiency upon excitation by light in a wide range of wavelengths from deep ultraviolet light having a wavelength of 200 nm to 300 nm to visible light, and can increase the conventionally known fluorescence quantum efficiency of silicon nanoparticles from around 1% to 10% or more.