Disclosed are a display panel and a display device. The display panel is provided with an display region and a peripheral region, and includes a display substrate and at least one alignment mark disposed in the peripheral region. The display substrate is sequentially provided with a first packaging layer, a light-shielding layer, and a second packaging layer at a side, distal to the base substrate, of a second electrode layer. The light-shielding layer is provided with an opening hole, and a distance between a medial edge of the opening hole and a first end of the light-shielding layer is greater than a distance between a lateral edge of the opening hole and a second end of the light-shielding layer.

A light emitting element containing a Group III nitride semiconductor has a first light emitting region and a second light emitting region having different emission wavelengths, the first light emitting region has a plurality of first regions, the second light emitting region has a plurality of second regions, a planar pattern of the first light emitting region and the second light emitting region is a pattern in which a plurality of units are arranged in a predetermined direction, each of the units being a pattern including one or more of the first regions and one or more of the second regions, and the plurality of first regions are electrically connected to each other in parallel, and the plurality of second regions are electrically connected to each other in parallel.

This specification discloses a light emitting devices with electrical pads improving performance. The electrical pads are disposed under the dies to prevent hot spots from occurring, particularly under the peak luminance areas of shaped luminance dies. The electrical pads may have asymmetric n and p areas, with the larger of the areas being disposed under the peak luminance area while the gap between the n and p areas do not overlap the peak luminance area. The electrical pads of different dies are bridged by horizontal or diagonal connections between the dies.

An interposer may include a temporary substrate, a common pad disposed on the temporary substrate and light emitting diodes (LEDs) disposed on the common pad. Each of the light emitting diodes may include a first electrode, a first semiconductor layer, an emission layer, a second semiconductor layer, a second electrode, and a passivation layer. The second electrode, the second semiconductor layer, the emission layer, the first semiconductor layer and the first electrode may have a structure formed from sequential lamination. The passivation layer may enclose the second semiconductor layer, the emission layer and the first semiconductor layer. The common pad may be electrically connected to the second electrode at a lower side of the light emitting diodes. The first electrode in each of the light emitting diodes may extend to an upper portion of the passivation layer. A method for inspecting light emitting diodes disposed on a temporary substrate is also disclosed.

Arrays of light emitting diode (LED) devices in which each LED device includes a mesa having a top surface and at least one sidewall defining a trench having a bottom surface. The mesa comprises semiconductor layers including an n-type layer, an active layer, and a P-type layer, and an electrically conductive material fills the trench. An n-contact, which can be a transparent conductive oxide (TCO) layer, lines an entire surface of the sidewall and trench bottom, and a dielectric layer lines an entire length of the TCO layer, such that the dielectric layer optically isolates the trench and the n-contact functions as an n-contact and spreading layer.

A light emitting element includes a semiconductor stack structure, a first electrode, a second electrode, and an insulation layer. The semiconductor stack structure includes a first p-type semiconductor layer, a first active layer, a first n-type semiconductor layer, an intermediate layer, a second p-type semiconductor layer, a second active layer, and a second n-type semiconductor layer. The semiconductor stack structure includes a first opening and a second opening. The first opening is provided continuously in the first p-type semiconductor layer and the first active layer. The second opening in a plan view is located to overlap the first opening. The second opening is provided continuously in the first n-type semiconductor layer, the intermediate layer, the second p-type semiconductor layer, and the second active layer.

The display device includes a substrate, a first and second assembly wirings on the substrate, a partition having a hole on the first and second assembly wirings, and a semiconductor light emitting device in the hole, wherein the hole configured to have an inner side with a first obtuse angle to a lower side, and wherein the semiconductor light emitting device configured to have at least one side having a second obtuse angle with respect to the lower side.

A display device includes a pixel electrode, a light emitting element including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially located on the pixel electrode, a groove being in a portion of the light emitting element where the second semiconductor layer is located, a common electrode on the light emitting element, and a light scattering layer on the common electrode and filling the groove.

A method of manufacturing a display device includes a step of attaching a plurality of LED elements to an adhesive resin layer of a transfer substrate and a step of applying a thermal treatment to a plurality of bump electrodes, whereby electrodes of the plurality of LED elements are bonded to the plurality of bump electrodes of an array substrate. The array substrate has a mounting region to which the plurality of LED elements are mounted from the transfer substrate. Planar areas of the bump electrodes provided in a peripheral edge portion of the mounting region are larger than a planar area of the bump electrode provided in a central portion of the mounting region.

The present application relates to the technical field of light-emitting diodes, and particularly relates to a flip-chip high-voltage light-emitting diode. The present application designs on one light-emitting unit a protruding part which faces the center position of the flip-chip high-voltage light-emitting diode, so that a vulnerable position of an isolation groove is prevented from being pressed against by an ejector pin, and meanwhile, a situation of electric leakage caused by film layer breakage is avoided, thereby improving reliability.