A method of manufacturing a display device includes forming a semiconductor stacked structure on a growth substrate; forming a base bonding electrode on the semiconductor stacked structure; forming a semiconductor stacked pattern and a first bonding electrode by respectively etching the semiconductor stacked structure and the base bonding electrode; and bonding the first bonding electrode on a pixel circuit layer.

A a method for manufacturing an optoelectronic device including at least one LED and at least one photodiode, including the following consecutive steps: a) epitaxially forming an active semiconductor emitting and receiving stack common to the LED and photodiode; b) forming trenches extending vertically through the active stack, and laterally delimiting the LED and photodiode, wherein the trenches are arranged so that the lateral dimensions of the LED are smaller than the lateral dimensions of the photodiode.

A mask-to-donor alignment method for laser-induced forward transfer includes (a) directing a laser beam onto a mask to produce a masked beam including one or more separate sub-beams, each sub-beam being transmitted by a respective aperture of the mask, (b) viewing each sub-beam, as transmitted by a donor substrate carrying one or more devices, to obtain imagery indicating in each sub-beam a shadow of a corresponding one of the one or more devices, and (c) based on the imagery, adjusting position of the masked beam and the donor substrate, relative to each other, so as to align each device with respect to the corresponding sub-beam. This in-situ observation of the relative alignment between the donor substrate and the masked beam produces an improved alignment accuracy, as compared to the indirect fiducial-based alignment method. Alignment accuracies better than 0.2 m, and associated sub-1 m LIFT positioning accuracies, have been demonstrated.

Provided is a display substrate, including: a base substrate; a plurality of conductive patterns on base substrate; a plurality of light-emitting elements on base substrate, where the plurality of light-emitting elements are arranged in array and spaced apart from each other, and at least one light-emitting element includes a first electrode, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, and a second electrode, first electrode is electrically connected to conductive pattern, first type semiconductor layer is located on a side of first electrode, light-emitting layer is located on a side of first type semiconductor layer, second type semiconductor layer is located on a side of light-emitting layer, and second electrode is located on a side of second type semiconductor layer; and a conductive light-shielding portion on base substrate, located in a gap between two adjacent light-emitting elements, and being electrically connected to second electrode.

A method of manufacturing a photonic device including the following steps: providing a structure including a base substrate covered by (Al,In,Ga)N/(Al,In,Ga)N mesas, a first mesa being fully porosified and having flanks covered by a protective layer, a second mesa being non-porosified, and a third mesa including porosified flanks and a non-porosified central portion, epitaxially growing an active structure including InGaN-based quantum wells simultaneously on the first mesa, the second mesa, and the third mesa, to respectively form a first active structure emitting at a first wavelength, a second active structure emitting at a second wavelength, and a third active structure emitting at a third wavelength.

A light emitting device according to an aspect includes a first stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a first light emitting layer, a first insulating layer provided on a side surface of the first stacked body, a first metal layer provided on the first insulating layer and located on a side of the first stacked body, a first electrode provided between the substrate and the first stacked body and electrically coupled to the first semiconductor layer, a second electrode provided on a side of the first stacked body opposite to the first electrode and electrically coupled to the second semiconductor layer, a first transparent layer provided on a side of the second electrode opposite to the first stacked body, a first lens provided on a side of the first transparent layer opposite to the second electrode and overlapping the first light emitting layer in a plan view, and a reflective member made of metal provided on sides of the first lens and the first transparent layer. The reflective member is electrically coupled to the second electrode.

The invention relates to a light-converting optoelectronic device comprising light-emitting diodes and conversion pads (40). Spacer portions (23) that are conductive and transparent, are located between the reflective portion (22) and the lower conductive portion (31) of the converting luminous pixels (Px.sub.ac) only or of the non-converting luminous pixels (Px.sub.sc) only. Moreover, the thickness (e.sub.31.opt) of the lower conductive portions (31) and the thickness (e.sub.23.opt) of the spacer portions (23) are predefined so as to maximize: in the non-converting luminous pixels (PX.sub.sc), an extraction efficiency of the emitted light from the light emitting diode; and in the converting luminous pixels (PX.sub.ac), a coupling efficiency of the light emitted by the active portion (32) with optical modes supported in the conversion portion (40).

A pixel structure for improving light emitting efficiency is disclosed in the present disclosure. The pixel structure includes a pixel lens, a negative electrode pad layer, a conductive semiconductor layer, a quantum well, an isolation layer, a positive electrode layer, a dielectric layer and an integrated circuit (IC) chip layer from top to bottom, and the quantum well is arranged inside the conductive semiconductor layer. A three-surface covering reflective layer is arranged between the lower surface of the conductive semiconductor layer and the top of the positive electrode layer. The conductive semiconductor layer comprises an inverted trapezoidal semiconductor part and a continuous planarization layer. The bevels on the two sides of the inverted trapezoidal semiconductor part converge and reflect the light emitted by the quantum well in the direction of the pixel lens. And the negative electrode pad layer is arranged on the continuous planarization layer.

A stretchable and flexible electroluminescent film may include a bottom substrate layer and a bottom electrode layer on the substrate layer. A dielectric layer may be included on the bottom electrode layer. An electroluminescent layer may be included on the dielectric layer. The electroluminescent layer may illuminate in response to an electric field. The film may further include a top electrode layer configured to provide the electromagnetic field with the bottom electrode layer. The film may further include a top substrate layer on the electrode layer. The bottom substrate layer, the bottom electrode layer, the dielectric layer and the electroluminescent layer each include an elastomeric polymer. The film may be printer layer by layer using a mask-free additive manufacturing process.

A chip lamp bead and a luminaire are provided. The chip lamp bead includes: a packaging body, and a lamp bead body packaged in the packaging body, where the lamp bead body includes a substrate, and a first luminous body, a second luminous body and a control chip provided on the substrate.