A light emitting device including a protection layer including a first area and a second area having a greater thickness than the first area, a light emitting stacked structure including a plurality of semiconductor layers sequentially disposed one over another along a first direction on the first area of the protection layer, a plurality of via patterns electrically connected to the light emitting stacked structure and having a length along the first direction, and a plurality of pads electrically connected to the light emitting stacked structure through the via patterns, respectively, in which the second area of the protection layer does not overlap the light emitting stacked structure, and at least portion of the pads overlaps the second area of the protection layer and one of the via patterns.

A multi-layer display including an upper substrate including light emitting diodes (LEDs) fabricated on a topside of the upper substrate, and LED bonding pads fabricated on a bottomside of the upper substrate. The LED bonding pads being electrically connected to the LEDs through vias extending through the upper substrate. The display also including a lower substrate including LED driver circuits and driver bonding pads fabricated on a topside of the lower substrate. The driver bonding pads being electrically connected to the LED driver circuits, where the LED bonding pads and driver bonding pads are aligned and electrically connected to each other, thereby electrically connecting the LED driver circuits to the LEDs.

A method for fabricating a single pixel multi-color micro light-emitting diode device for a display panel comprises providing a substrate supporting a pixel driver, forming a metal bonding layer on top of the substrate, fabricating a first LED structure layer on top of the metal bonding layer, and fabricating a second LED structure layer on top of the first LED structure layer. The method further includes coating a first-type electrode to contact a lower portion of the first LED structure layer, a lower portion of the second LED structure layer, and the metal bonding layer, respectively. The first-type electrode electrically connects the pixel driver to the lower portion of the first LED structure layer and the lower portion of the second LED structure layer through the metal bonding layer.

The backlight unit according to an embodiment comprises: a base substrate including circuit wiring; a plurality of light-emitting diodes disposed to form an array on the base substrate; a diffusion layer located laterally around the individual light-emitting diodes; and correcting lenses located on top of the respective light-emitting diodes, and can provide uniform white light in all directions through uniform light distribution by reducing color difference for different viewing angles that occurs due to the structure of a semiconductor light-emitting diode.

A display device includes: a first subpixel; a second subpixel; a pixel circuit layer including a pixel circuit; a first subpixel area formed by the first subpixel; a second subpixel area formed by the second subpixel; a 1-1 light-emitting element on the pixel circuit layer, a 1-2 light-emitting element on the 1-1 light-emitting element, and a 1-3 light-emitting element on the 1-2 light-emitting element, wherein the 1-1 light-emitting element, the 1-2 light-emitting element, and 1-3 light-emitting element are in the first sub-pixel area; and a 2-1 light-emitting element on the pixel circuit layer, a 2-2 light-emitting element on the 2-1 light-emitting element, and a 2-3 light-emitting element on the 2-2 light-emitting element, wherein the 2-1 light-emitting element, the 2-2 light-emitting element, and the 2-3 light-emitting element are in the second subpixel area, wherein the 1-3 light-emitting element is not electrically connected to the pixel circuit.

A light-emitting diode (LED) epitaxial structure includes a first color epitaxial layer and a second color epitaxial layer that are stacked. Each of the first color epitaxial layer and the second color epitaxial layer includes a first stress buffer layer, a first carrier injection layer, a light-emitting layer, and a second carrier injection layer that are sequentially stacked in a first direction. The light-emitting layers are of different colors. One of the first carrier injection layer and the second carrier injection layer is an electron injection layer, and the other of the first carrier injection layer and the second carrier injection layer is a hole injection layer.

A polychrome micro LED pixel includes at least two light emitting structures, and each of the at least two light emitting structures includes at least two sub-pixels. A micro LED display panel includes an integrated circuit (IC) backplane including a bottom pad array, the bottom pad array including a plurality of groups of bottom pads; and a micro LED array formed on the IC backplane, the micro LED array including a plurality of polychrome micro LED pixels. One micro LED pixel of the plurality of micro LED pixels is electrically connected with one group of bottom pads of the plurality of groups of bottom pads.

A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes a driving substrate, a first epitaxial structure coupled to the driving substrate, and a second epitaxial structure coupled to the first epitaxial structure, where the driving substrate is selectively coupled to a first semiconductor layer and a second semiconductor layer of the first epitaxial structure, and a third semiconductor layer and a fourth semiconductor layer of the second epitaxial structure by metal electrodes to independently control the first epitaxial structure and the second epitaxial structure.

A display device according to an embodiment includes a lower substrate, a first bonding electrode disposed on the lower substrate, a first light emitting element disposed on the first bonding electrode, a second bonding electrode disposed on the first light emitting element, and a second light emitting element disposed on the second bonding electrode, the second bonding electrode includes a first distributed Bragg reflector including at least one pair of a first transparent conductive layer and a second transparent conductive layer having different refractive indices that are alternately stacked.

A display apparatus including a panel, a substrate disposed on the panel and having a first surface and a second surface opposing each other, a light shielding layer disposed on the second surface of the substrate, a plurality of nitride semiconductor layers directly disposed on the first surface of the substrate and defining a light emitting area, and a plurality of pads disposed on the nitride semiconductor layers, in which the light shielding layer has a thickness greater than a length of the longest wavelength among wavelengths of light generated from the light emitting area, and an upper surface of the light shielding layer has a concaved surface.