A display device may include a substrate including a light emitting device, an insulating layer disposed on the substrate, a barrier layer disposed on the insulating layer, and including a barrier hole positioned to overlap with a contact hole of the insulating layer, and a row connection electrode disposed in the contact hole of the insulating layer and the barrier hole, and disposed on the barrier layer.

The disclosure provides a semiconductor structure and a method for manufacturing thereof. The semiconductor structure includes a substrate, a light-emitting pixel layer on the substrate, and reflective parts. The substrate includes a first surface and a second surface opposite to the first surface, the first surface includes a convex parts, and each of the convex parts protrudes in a direction away from the second surface; the light-emitting pixel layer includes at least one light-emitting pixel including a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially disposed on the second surface, and conductivity types of the first semiconductor layer and the second semiconductor layer are opposite; and the reflection parts are conformally formed on the convex parts, and the reflection parts and the convex parts are in one-to-one correspondence in position.

A display device includes: a substrate; a transistor above the substrate; a first insulating layer above the substrate; a second insulating layer on the first insulating layer; a first pixel electrode on the first insulating layer; a scattering layer on the first pixel electrode and is in contact with the second insulating layer; a second pixel electrode on the scattering layer and overlaps the first pixel electrode in a plan view; a light emitting layer on the second pixel electrode; and a common electrode on the light emitting layer, wherein at least one of the first pixel electrode or the second pixel electrode is electrically connected to the transistor.

There is provided a display device. The display device includes a substrate including a light emitting area; an anode electrode positioned on the light emitting area of the substrate and including silver; and an element insulating layer covering an edge of the anode electrode and defining a light emitting opening, wherein the anode electrode includes: a first layer positioned on the substrate; a second layer positioned on the first layer; and a third layer positioned on the second layer and including a protruding portion that protrudes further compared to a side surface of the second layer, and a width of the protruding portion of the third layer is 0.1 micrometers or less.

A light-emitting device of an embodiment of the disclosure includes: a drive substrate; a plurality of light-emitting elements each having a first surface and a second surface, the first surface being opposed to the drive substrate, the second surface being on an opposite side to the first surface and being a light outputting surface, the plurality of light-emitting elements being disposed in an array on a side of one surface of the drive substrate and each including a compound semiconductor; and a growth substrate that is in contact with the second surface of each of the plurality of light-emitting elements, and forms an interface free of lattice mismatch with the compound semiconductor that configures each of the light-emitting elements.