A method of manufacturing a 3D device including: forming a first level including first transistors and a first interconnect; forming a second level including second transistors; overlaying the second level on the first level; and bonding the second level to the first level; the bonding includes performing metal region to metal region bonding, the 3D device includes at least four electronic circuits (AL4ECs) and at least one redundancy circuit, where the AL4ECs each include a first circuit which includes a portion of the first transistors, where the AL4ECs include a second circuit which includes a portion of the second transistors, where the AL4ECs each include a vertical connectivity structure (VCSt), the VCSt includes pillars, where the pillars are configured to provide electrical connections between the first circuit and the second circuit, and where the AL4ECs each include at least one memory control circuit and at least one memory array.

Aspects of the present disclosure relate to a 3D-millimeter wave integrated circuit (3D-mmWIC configured to improve the efficiency and functionality of radio-frequency (RF) circuits through a multi-material, multi-layered architecture. These aspects can integrate silicon-based complementary metal-oxide semiconductor (CMOS) technology with other semiconductor materials, including Gallium Nitride (GaN), graphene, and/or various semiconductor alloys from the periodic table's Groups II-VI and/or III-V. The 3D-mmWIC can employ a layered structure comprising a silicon substrate, interleaved dielectric layers with embedded metal regions of varying thicknesses and lengths, a semiconductor layer, and/or additional oxide and dielectric layers. This architecture can enable the integration of multiple source, drain, and gate modules, interconnected via a sophisticated metal/oxide network. The disclosed integrated circuit architecture can provide significant advancements in RF circuit integration, offering reductions in size and cost while increasing design flexibility and performance.

Provided is an image sensor having a chip-stacked structure, which may reduce the number of through-wires penetrating a transistor layer while avoiding connection by large metal pads between chips. The image sensor includes a first substrate including a first semiconductor layer and a first wiring layer, and the first semiconductor layer includes a photoelectric conversion element, and a second substrate including a second semiconductor layer and a second wiring layer, and the second semiconductor layer including a transistor. The first wiring layer is bonded to the second wiring layer, and a through-wire contacts a side surface of a gate or a side surface of a diffusion layer of the transistor, the through-wire penetrates the second substrate, and the through-wire is connected to the photoelectric conversion element through a wire of the first substrate.

A semiconductor device assembly can include a first semiconductor device comprising CMOS circuitry at a first active surface and a second semiconductor device having a footprint smaller than that of the first semiconductor device and including memory array circuitry at a second active surface hybrid-bonded to the first active surface. The assembly can further include a gapfill material directly contacting the first active surface of the first semiconductor device and having an upper surface coplanar with a back surface of the second semiconductor device, and a metallization layer disposed over the second semiconductor device and the gapfill material. The metallization layer can include conductive structures operably coupled to the second semiconductor device through back-side contacts of the second semiconductor device. The assembly can further include a plurality of bond pads disposed at an upper surface of the metallization layer and coupled to the conductive structures of the metallization layer.

A semiconductor module includes a cooler, a plurality of semiconductor devices, and a capacitor. The cooler includes a housing having a receiving portion and a hollow portion that is disposed externally around the receiving portion as viewed in a first direction. The housing has a first surface, a second surface, and a third surface on which the plurality of semiconductor devices are respectively mounted. Each of the first surface, the second surface, and the third surface faces away from the receiving portion with respect to the hollow portion in a direction orthogonal to the first direction. The first surface, the second surface and the third surface each have a different normal direction. At least a part of the capacitor is housed in the receiving portion.

A power semiconductor device includes a plurality of power modules. Outer shapes of packages of the plurality of power modules are the same. The plurality of power modules include a first half-bridge module made of a first semiconductor, and at least one of a second half-bridge module made of a second semiconductor, a second relay module made of a second semiconductor, and a second diode module made of a second semiconductor.

A package and method is disclosed. In one example, the package comprises a carrier comprising a component mounting area from which a tie bar extends, the tie bar being configured for being clamped by an encapsulation tool pin during encapsulation, an electronic component mounted on the component mounting area, and an encapsulant encapsulating at least part of the electronic component and at least part of the carrier, wherein a sidewall of the package has a step between a first vertical sidewall section and a second vertical sidewall section; wherein the first vertical sidewall section has a notch in the encapsulant and a part of the second vertical sidewall section exposes the tie bar.

A semiconductor arrangement includes first and second semiconductor packages separate from one another. Each semiconductor package includes a die carrier having opposite first and second main faces, a transistor die disposed on the first main face, a first lead connected to a first load electrode of the transistor die, a second lead connected to a gate electrode of the transistor die, and an encapsulant embedding at least part of the first main face of the die carrier, inner portions of the leads and the transistor die. The first lead of the first semiconductor package is electrically connected to the first lead of the second semiconductor package, forming a source-source connection. The second lead of the first semiconductor package and the second lead of the second semiconductor package are arranged between the first semiconductor package and the second semiconductor package.

A semiconductor device includes: a first terminal and a second terminal; a first conductive member that is electrically connected to the first terminal; a semiconductor chip that is provided on the first conductive member; a second conductive member that is provided on the semiconductor chip and electrically connected to the second terminal; a first insulator that is provided on the second conductive member and covers the semiconductor chip; a conductive plate that is provided on at least a part of the first insulator; and a post that is electrically connected to the conductive plate and extends along a side surface of the first insulator.

An example integrated circuit includes a first layer that extends in a first direction and a second layer that is disposed below the first layer. The second layer extends in a second direction perpendicular to the first direction, is electrically connected to the first layer, and corresponds to a first signal pin of a first standard cell among a plurality of standard cells. A position of the first layer in the second direction is substantially the same as a position of a first cell boundary, among a plurality of cell boundaries of the plurality of standard cells in the first direction, in the second direction.