A method of manufacturing a light-emitting device includes: providing a substrate, providing a light-emitting structure containing a plurality of solid-state light sources disposed on the substrate, and providing a hybrid encapsulation film for encapsulating the light-emitting structure. The hybrid encapsulation film includes a B-stage light-transmitting layer having a front surface and a back surface and a plurality of first reflective layers disposed at intervals on the front surface of the B-stage light-transmitting layer. The method further includes: laminating the back surface of the B-stage light-transmitting layer of the hybrid encapsulation film toward the solid-state light sources of the light-emitting structure, so that the solid-state light sources are embedded in the B-stage light-transmitting layer and correspond to the positions of the first reflective layers, and performing a thermal process to cure the hybrid encapsulation film.

A method of manufacturing a light-emitting device includes: providing a substrate, providing a light-emitting structure containing a plurality of solid-state light sources disposed on the substrate, and providing a hybrid encapsulation film for encapsulating the light-emitting structure. The hybrid encapsulation film includes a B-stage light-transmitting layer having a front surface and a back surface and a plurality of first reflective layers disposed at intervals on the front surface of the B-stage light-transmitting layer. The method further includes: laminating the back surface of the B-stage light-transmitting layer of the hybrid encapsulation film toward the solid-state light sources of the light-emitting structure, so that the solid-state light sources are embedded in the B-stage light-transmitting layer and correspond to the positions of the first reflective layers, and performing a thermal process to cure the hybrid encapsulation film.

The disclosure provides a semiconductor chip including a first semiconductor element, a second semiconductor element, a filling layer, a transparent conductive layer and a first metal layer. The second semiconductor element is adjacent to the first semiconductor element. The filling layer wraps the first semiconductor element and the second semiconductor element. The transparent conductive layer is disposed on the filling layer. The transparent conductive layer electrically connects the first semiconductor element and the second semiconductor element. The first metal layer is disposed under the filling layer and includes a first portion and a second portion. The first portion is electrically connected to at least one of the first semiconductor element and the second semiconductor element. The second portion is disposed on a side surface of the filling layer. The semiconductor chip of the disclosure is adapted to reduce a defect rate or power consumption.

The disclosure provides a semiconductor chip including a first semiconductor element, a second semiconductor element, a filling layer, a transparent conductive layer and a first metal layer. The second semiconductor element is adjacent to the first semiconductor element. The filling layer wraps the first semiconductor element and the second semiconductor element. The transparent conductive layer is disposed on the filling layer. The transparent conductive layer electrically connects the first semiconductor element and the second semiconductor element. The first metal layer is disposed under the filling layer and includes a first portion and a second portion. The first portion is electrically connected to at least one of the first semiconductor element and the second semiconductor element. The second portion is disposed on a side surface of the filling layer. The semiconductor chip of the disclosure is adapted to reduce a defect rate or power consumption.

A semiconductor component and a semiconductor device are provided. The semiconductor component includes a carrier, a semiconductor element, and a protective layer. The carrier includes a substrate and a bracket structure. The bracket structure is disposed on the substrate. The semiconductor element is disposed on the carrier. The semiconductor element includes a semiconductor stack, a plurality of electrodes, and a roughened structure. The semiconductor stack has a first surface and a second surface, which are opposite each other. The electrodes are disposed on the first surface. The roughened structure is disposed on the second surface and is in direct contact with the bracket structure. The protective layer is disposed on the first surface and covers the electrodes.

A semiconductor component and a semiconductor device are provided. The semiconductor component includes a carrier, a semiconductor element, and a protective layer. The carrier includes a substrate and a bracket structure. The bracket structure is disposed on the substrate. The semiconductor element is disposed on the carrier. The semiconductor element includes a semiconductor stack, a plurality of electrodes, and a roughened structure. The semiconductor stack has a first surface and a second surface, which are opposite each other. The electrodes are disposed on the first surface. The roughened structure is disposed on the second surface and is in direct contact with the bracket structure. The protective layer is disposed on the first surface and covers the electrodes.

A display device includes: a display panel including a plurality of pixels; and an input sensor on the display panel, wherein the input sensor includes: a first sensor insulating layer on the display panel; a sensor conductive layer on the first sensor insulating layer and including a plurality of conductive patterns; a second sensor insulating layer configured to cover each of the plurality of conductive patterns and including an organic material; and a protective layer on the second sensor insulating layer and including an inorganic material.

A display device includes: a display panel including a plurality of pixels; and an input sensor on the display panel, wherein the input sensor includes: a first sensor insulating layer on the display panel; a sensor conductive layer on the first sensor insulating layer and including a plurality of conductive patterns; a second sensor insulating layer configured to cover each of the plurality of conductive patterns and including an organic material; and a protective layer on the second sensor insulating layer and including an inorganic material.

A display device includes: a substrate including a first narrow pixel and a first wide pixel; a first electrode on the substrate; a light emitting layer on the first electrode; a second electrode on the light emitting layer; an encapsulation layer on the second electrode; and a capping layer between the second electrode and the encapsulation layer, where a thickness of the capping layer of the first narrow pixel is greater than a thickness of the capping layer of the first wide pixel.

A display device includes: a substrate including a first narrow pixel and a first wide pixel; a first electrode on the substrate; a light emitting layer on the first electrode; a second electrode on the light emitting layer; an encapsulation layer on the second electrode; and a capping layer between the second electrode and the encapsulation layer, where a thickness of the capping layer of the first narrow pixel is greater than a thickness of the capping layer of the first wide pixel.